Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 5 doc

... substrate, detected by SIMS [83] 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 10 17 10 18 10 19 10 20 [O] [H] 15 min 1000 °C / H 2 Concentration, cm - 3 Depth, µm 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 10 17 10 18 10 19 10 20 60 ... H 2 [O] [H] Concentration, cm - 3 Depth, µm 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 10 17 10 18 10 19 10 20 120 min 1000 °C / H 2 [H] [O] Concentration, cm - 3 De p th...

Ngày tải lên: 12/08/2014, 02:23

... right: Standard, annular, quadrupole CQUEST I, quadrupole CQUEST II 7.3 Lithography Procedures 155 As procedures for the exposure, optical, x-ray, electron and ion beam lithogra- phy of different ... Lithography Procedures 1 65 Fig. 7.22 Comparison of the line scan and vector scan procedure Fig. 7.23 Cross-sectional view of the electron-optical column of an electron-beam writer (ac...

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... wavelengths of 1300 or 155 0 nm. In first data transfer experiments, data rates of up to 5 Gb/s have been achieved using QCLs but still over short distances of maximum 350 m [ 354 , 355 , 356 ]. A further ... elements such as iron, molybdenum, and cobalt. The most common growth techniques are arc-discharge [384, 3 85] , laser-assisted deposition [386], and plasma-enhanced chemica...

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... Tunneling Diodes and Uni- Traveling-Carrier Photodiode. IEEE Solid State Circ, vol 36, p 281 262 Index chromium mask 159 cluster 5, 14, 55 , 109, 114 – Au 55 cluster, ligand-stabilized 117 ... diborane (B 2 H 6 ) 45, 85, 121 dielectric function 73 diffraction 5, 12, 76, 122, 1 25, 156 , 169, 197 – electron 80 – x-ray 79, 1 25 diffractometer 79 diffusion 31, 51 , 55 ,...

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... specific defects. p-type Czochralski (Cz) Si is plasma-treated for 120 min at 250 °C and an- nealed in air for 10 min at temperatures between 250 °C and 600 °C. The Raman shift is measured in two ... depletion zone. It reflects a special case of the Shockley-Hall-Read generation recom- Fig. 3 .5 Raman shift of H 2 bonds (a) and of Si-H bonds (b) [22] 18 3 Nanodefects vacancies ca...

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... transition. The mixture of Ga and As in a ratio of 50 :50 takes over the role of a constituent, i.e., the phase dia- gram disintegrates into a first Ga-GaAs and a second GaAs-As phase diagram. In other ... active layer, e.g., n-type on p-type substrate, silicon-on-sapphire (SOS), and silicon-on- oxide (SOI). The latter includes versions like (i) oxygen implantation and SiO 2 format...

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... lumi- nescence is reduced as well. A detailed overview of the Raman modes observed in zeolites is given in [164]. 146 7 Nanostructuring 1. 25 1 .50 1. 75 2.00 2. 25 2 .50 2. 75 3.00 3. 25 3 .5 1. 75 5 5 ... cm 1 and a broad peak from 1 350 cm 1 to approximately 155 5 cm 1 . The line at 1206 cm 1 is assigned to a mixture of sp 2 and sp 3 carbon. The broad peak is as...

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... Co 67 Dy 33 755 Ho 70 Ni 30 Mo 720 Fe 36.7 Ho 63.3 8 75 Fe 18 Pr 82 Ta 667 Mn 10 .5 Pb 89 .5 Al 2 O 3 328 B 45 Ni 45 Si 10 Graphite 900 Au 70 Be 15 Si 15 Graphite 3 65 Au 68.8 Ge 23 .5 Dy 7.7 ... remain depleted be- tween the p and n regions. Therefore, a p-type line in a n-type area (e.g., a two- dimensional electron gas; 2DEG) works like two lateral anti-serial...

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... 20 05 2008 2011 2014 Technology, nm 180 130 100 70 50 35 DRAM, nm 180 1 65 150 130 120 110 100 70 50 35 MPU-Gate, nm 140 120 100 90 80 70 65 45 32 22 Lithography KrF KrF- RET ArF ArF- RET F 2 F 2 - RET EUV IPL EPL ... exactly contradicts the de- mands of ITRS. 0 0. 05 0.1 0. 15 0.2 0. 25 0.3 0. 35 0.4 0. 45 0. 95 1 1. 05 1.1 1. 15 Relative abundance Thre...

Ngày tải lên: 12/08/2014, 02:23