The Materials Science of Thin Films 2011 Part 1 ppt

... and be oxidized in the process. Further consideration of Eqs. 1- 12 and 1- 15b indicates that )2/3 AG = exp - ( aAl,03 K= (aAl Y3pO2 RT (1- 17) The A1,0, and A1 may be considered ... Equation 1- 12 is one of the most frequently used equations in chemical thermodynamics and will be helpful in analyzing CVD reactions. Combining Eqs. 1- 10 and 1- 11 gives...

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... view of the MOS field effect transistor structure in Fig. 4 -1 indicates the extent to which the technology is employed. Above the plane of the base P-Si wafer, all of the films with the ... -10 0- -1 20 -1 40 I 0 . and, therefore, - - - - IIIII (3 number of moles of C1 = 15 9 the perfect gas law, Similarly, for all other terms in th...

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... + n2). Therefore, n,= Jnonz. (1 1- 20) Since 6 = 4nn,d,/X = a, 3a, 5~, etc, x 3x 5x n,d= - - - , etc. 4’ 4’4 (1 1- 21) Equations 11 -20 and 11 - 21 represent the amplitude ... factor of 1 /e occurs when the film is continuous. Therefore, the use of Eq. 11 -3 with I/Zo = 1 /e yields 4 a kd / X = 1, or d = X/4 a k. It is clea...

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... Coatings 9. * 10 . 11 . 12 . 13 . 14 . 15 . 16 . 17 . 18 . 19 . 20. 21. 22. 23. 24. 25. 26. 27. 28. R. F. Bunshah and C. Deshpandey, in Physics of Thin Films, Vol. 13 , eds. M. ... (19 78). S. Stecura, Thin Solid Films 13 6, 2 41 (19 86). R. A. Miller and C. C. Berndt, Thin Solid Films 11 9, 19 5 (19 84). G. Johner and K. K. Schwei...

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... applications, 79 hysteresis, 12 6 magnetron, 11 6, 11 8, 12 5 reactive, 11 8, 12 6 RF, 10 3, 11 8, 12 1 stoichiometry, 11 4 table, 13 2 targets, 11 8 targets (table), 11 9 -12 0 YBa,Cu,O,, 644 zone ... sputter yield, 11 3 Sputter yield, 11 1 -11 2, 11 3 Sputter-ion pump, 70 Sputtered films, stress, 427 Sputtering, 10 9, 13 1 metals, 11 3 schematic, 71 a...

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... continuous state of random motion, which is intimately dependent on the temperature of the gas. During their motion the gas particles collide with each other as well as with the walls of the confining ... field. logarithm of the rate is plotted on the ordinate and the reciprocal of the absolute temperature is plotted along the abscissa. The slope of the...

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... 513 613 613 613 613 293- 413 < 313 313 10 13 -12 13 313 - 513 523 523 12 13 523 -11 3 413 - 613 513 -11 3 12 13 813 523 -12 13 613 - 913 633- 613 413 -11 3 613 - 813 673 10 -8 -10 - 10 -~ -10 -~ ... 10 -~ -10 -~ 10 - 8 -10 - 10 -~ -10 -~ 10 -* -10 - 10 -~ 10 -~ -10 -~ 10 -~ 10 -8 -10 -6 10 -8 -10 -6 3 x 10 -4 10 - 8 -10 - 10 -8 10...

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... keV-30 keV 500 eV- 10 keV 10 0-400 keV 10 0-400 keV 10 0-400 keV 0.5 -2.0 keV 1- 15 keV 1- 15 eV 1 keV and up 5-20 keV > 1 MeV Photon > 1 keV > 1 keV > 1 keV Laser Laser ... 3, 15 6 (19 66). 11 . D. Kashchiev, Surface Science 86, 14 (19 79). 12 . K. L. Chopra, Thin- Film Phenomena, McGraw-Hill, New York (19 69). 13 . G. E. Rhead,...

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... 2558 (19 89). 19 .* A. Y. Cho, Thin Solid Films 10 0, 2 91 (19 83). 20.* K. Ploog, Ann. Rev. Mater. Sci. 11 , 17 1 (19 81) . 21 .* M. B. Panish and H. Temkin, Ann. Rev. Mater. Sci. 19 , ... array of Fig. 7-26a reflects the sixfold symmetry of the (11 1) plane, and the six fainter spots in between are the result of the (7 x 7) surface reconstructio...

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... in Thin Films - ; A k ;I Ib I; b. 10 4 200 17 5 15 0 12 5 10 0 75 I I I I u I t: '022.0 212 2.4 2.6 2.8 10 3/ToK Figure 8 -13 b. Arrhenius plots for the kinetics of ... requires that Ef = E,; therefore, the thermal mismatch force is If d,E,/ (1 - v,) S dfEf/(l - vf), the thermal stress in the film is (9 -16 ) (9 -17 ) Note that...

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