Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 5 ppt

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 1 doc

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 1 doc

... Tuller-2001 For R 9 3.2 25 9 Equation of Motion - Impact of Collisions Assume: • probability of collision in time dt = dt/τ • time varying field F(t) v(t+dt) = ( 1- dt/τ) {v(t) +dv} = ( 1- dt/τ) ... wave-like • activated hopping • Field Dependence: • Linear vs non-linear © H.L. Tuller-2001 varies by over 25 orders of m 1 3.2 25 7 Microscopic Origin: Can we...

Ngày tải lên: 11/08/2014, 14:20

10 363 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 5 ppt

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 5 ppt

... –10 22 *1/10 7 =10 15 dopant atoms per cm -3 –n~10 15 , p~10 20 /10 15 ~10 5 σ/σ i ~(p+n)/2n i ~n/2n i ~10 5 ! Impurities at the ppm level drastically change the conductivity ( 5- 6 orders of magnitude) ... Eg=1.1eV, and let µ e and µ h be approximately equal at 1000cm 2 /V-sec (very good Si!). σ~10 10 cm -3 *1.602x10 -1 9 *1000cm 2 /V-sec=1.6x10 -6 S/m,...

Ngày tải lên: 11/08/2014, 14:20

10 415 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 10 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 10 pps

... 13 10 -7 10 -6 10 -5 10 -4 Y-cut σ 0 = 2.1 S cm -1 E A = 1 05 kJ mol -1 10 4 /T [1/K] σ [S cm -1 ] 900 800 700 600 50 0 T [°C] 13 3.2 25 13 © H.L. Tuller-2001 Gas Sensors and MEMS ... •Smart sensors 3.2 25 14 © H.L. Tuller-2001 Microhotplate 7 4 3.2 25 7 © H.L. Tuller-2001 0 5 10 15 20 25 30 35 1E -5 1E-4 1E-3 0,01 0,1 T = 850 °C X...

Ngày tải lên: 11/08/2014, 14:20

10 394 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 9 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 9 pps

... (Ωcm) -1 ) T = 800 °C log(pO 2 / bar) 0.9 95 1,0 05 -1 6 -4 0 -5 -4 -3 -2 -1 0 1 donor acceptor -2 0 -1 2 -8 donor doped acceptor doped 2 3.2 25 15 Designer Wavelengths Variation of ... Electromechanical •Optical •Magnetic 10 3.2 25 5 © H.L. Tuller-2001 Temperature Independence: High Acceptor Concentration in SrTiO 3 10 -2 0 1...

Ngày tải lên: 11/08/2014, 14:20

10 343 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 3 pot

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 3 pot

... 3.2 25 15 • Compton, Planck, Einstein – light (xrays) can be ‘particle-like’ • DeBroglie – matter can act like it has a ‘wave-nature’ • Schrodinger, Born – Unification of wave-particle ... Fitzgerald-1999 ) ) ) 3 3.2 25 5 Effect of Temperature (T>0): Coupled electronic- thermal properties in conductors • Electrons at the Fermi surface are able to increase energy: respons...

Ngày tải lên: 11/08/2014, 14:20

10 392 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 6 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 6 pps

... when you join these together? © E. Fitzgerald-1999 3.2 25 12 - - + + + + Holes diffuse Electrons diffuse + + + + - - - - + + + + - - + + + + An electric field forms due to ... 3.2 25 11 The p-n Junction (The Diode) • Note that dopants move the fermi energy from mid-gap towards either the valence band edge (p-type) or the conduction band edge...

Ngày tải lên: 11/08/2014, 14:20

10 342 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 8 pdf

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 8 pdf

... Fitzgerald-1999 9 3.2 25 11 Interaction of the d orbitals of a central ion with six ligands in an octahedral arrangement. Octahedral Environment of Transition Metal Ion © H.L. Tuller, 2001 3.2 25 ... H.L. Tuller, 2001 W 6 3.2 25 7 Characteristics of Optical Fiber © E. Fitzgerald-1999 3.2 25 8 Characteristics of Optical Fiber © E. Fitzgerald-1999 4 3.2 25 3...

Ngày tải lên: 11/08/2014, 14:20

10 353 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 4 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 4 pps

... 151 0 / ? 0.72 / 1. 35/ ? 5. 66 / 5. 65 / ? 50 8 / 798 / ? 0.08 /0.18 / 1. 45 6. 45 / 6.09 / ? IV / III-V / II-VI* ∗ Fill in as many of the question marks as you can. C 8 3.2 25 15 Real Band Structures • ... are:) n=1,2,3,… =0,1,2,…,n-1 m l =- , - +1,…,0,…, , (m s =+ or - 1/2) l l l l 0 -1 3.6eV U(r) © E. Fitzgerald-1999 ) in -1 3.2 25 9 Diffraction Picture o...

Ngày tải lên: 11/08/2014, 14:20

10 292 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 11 potx

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 11 potx

... material Material Type χ Paramagnetic +10 -5 -1 0 -4 Diamagnetic -1 0 -8 -1 0 -5 Ferromagnetic +10 5 2 5 3.2 25 5 © E. Fitzgerald-1999 Microscopic Source of Magnetization • No monopoles • magnetic ... negative Rule of Thumb: 5. 1 radius) 2(atomic distance cinteratomi 2 >≡ a r r J is a function of distance! 8 3.2 25 8 © E. Fitzgerald-1999 Ferrom...

Ngày tải lên: 11/08/2014, 14:20

6 347 0
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 2 pot

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 2 pot

... 7 .5 x 10 14 Hz) λ = c/ν = 400 nm k=2π/ λ = 1 .57 x 10 7 m -1 ω = 2 πν = 4.71 x 10 15 s -1 After Livingston ε ) ε (kx- ) ε 6 3.2 25 23 • Scaling of Si CMOS includes conductivity engineering ... e -i(kx-ωt) are all waves e -i(kx-ωt) is the complex one and is the most general real imaginary A Acosθ iAsinθ θ e iθ =cosθ+isinθ © E.A. Fitzgerald-1999 1 3...

Ngày tải lên: 11/08/2014, 14:20

10 294 0
w