Handbook of High Temperature Superconductor Electronics Part 8 pot
... significant parts of these devices are generally noisier. The reason of the higher noise level of the all types (dc and RF) of high- T c SQUIDs may be discrete or a large ensemble of Josephson ... the form of the potential energy of the system is such that the latter can be regarded as a two-level system (elementary fluctuator). Figures 7 .8 and 7.9 show graphs of the calcul...
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... 10 High- Temperature Superconductor Microwave Devices Neeraj Khare 11 High- Temperature Superconducting IR Detectors John C. Brasunas 12 Cryocoolers and High- T c Devices Ray Radebaugh 13 High- Temperature ... Conductance Noise in High- Temperature Superconductors László Béla Kish 6 Noise in High- Temperature Superconductor Josephson Junctions J.C. Macfarlane, L. Hao, and...
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... alter- natively, a high- power plasma decomposition of methane. The ion-milling rate of ␣-C is slightly higher than that of the diamondlike form. Very good results in terms of a step-edge profile have ... the range of temperature between 4.2 K and the critical temperature T c of the specific junction. After removal of the YBCO stripes, by additional ion milling the I–V char...
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Handbook of High Temperature Superconductor Electronics Part 11 potx
... of the symmetry of the order parameter. Section 1.5 .8 of Chapter 1 gives a detailed account of these measurements. The presence of s- or d-wave symmetry of the order parameter of a high- T c superconductor ... technology based on high- T c superconductors offers the potential of a large re- duction in mass and volume of the microwave equipment. High- T c film–dielectr...
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Handbook of High Temperature Superconductor Electronics Part 2 pps
... 13.21 La 2Ϫx Sr x CuO 4 214 38 1 Tetragonal a ϭ 3. 78, c ϭ 13.23 YBa 2 Cu 3 O 7 123 92 2 Orthorhombic a ϭ 3 .82 , b ϭ 3 .89 , c ϭ 11. 68 YBa 2 Cu 4 O 8 124 80 2 Orthorhombic a ϭ 3 .84 , b ϭ 3 .87 , c ϭ 27.23 Y 2 Ba 4 Cu 7 O 14 247 ... Giroud. Preparation structure and properties of the su- perconducting compound series Bi 2 Sr 2 Ca nϪ1 Cu n O y with nϭ1, 2 and 3. Phys Rev B 38: 888 5...
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Handbook of High Temperature Superconductor Electronics Part 3 docx
... relationships of these materials and the high volatility of Tl ox- ides. The fabrication of thin films of the Tl-based HTS compounds involves a pre- carious balance between the high temperatures ... applications. 2.4 .8 Oxycarbonate Cuprates A limited amount of effort has focused on the growth of the oxycarbonate cuprates (164–166). The structure of the Ba–Ca–Cu oxycarbona...
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Handbook of High Temperature Superconductor Electronics Part 4 pdf
... the fabrica- tion of high- temperature superconducting ramp-edge SNS junctions and SQUIDs. 86 Jia F IGURE 3.1 Cross-sectional diagram of a ramp-edge superconductor/ normal- metal /superconductor (SNS) ... of high- performance junctions. A series of sam- ples have been fabricated by varying the ion-milling energy (200, 300, 600, and 88 Jia F IGURE 3.2 Processing sequences in th...
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Handbook of High Temperature Superconductor Electronics Part 6 ppsx
... 5.3.1.1 “Bulk” Temperature Regime At the high- temperature part of the conductorn superconductor transition region, when the resistance has significantly decreased (the onset of superconductivity has ... independent of the temperature. Note: Although a significant part of HTS samples show this behavior especially materials of lower quality, the bulk regime is often missin...
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Handbook of High Temperature Superconductor Electronics Part 9 docx
... 2001. 187 . S Tanaka, R Shimizu, Y Saito, K Shin. Development of a high- T c SQUID cryosys- tem for the measurement of a remanent magnetic field of rock. IEICE Trans Elec- tron E83-C:44– 48, 2000. 188 . ... surface of the rim (1 38) . A demonstration of capability of high- T c SQUID NDE in the detection of deep buried defects gives a very optimistic picture for the potential...
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Handbook of High Temperature Superconductor Electronics Part 10 pptx
... Booij, MG Blamire. Measurement of the dynamic error rate of a high- temperature superconductor rapid single flux quantum comparator. Appl Phys Lett 72:23 28 2330, 19 98. 27. K Saito, Y Soutome, F ... by Ga doping of Pr Ba 2 Cu 3 O x barriers. Appl Phys Lett 69 :84 8 85 0, 1996. 13. BD Hunt, MG Forrester, J Talvacchio, JD McCambridge, RM Young. High- T c su- perconductor/normal-me...
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