Electronic Materials Part 8 potx
Electronic Materials Part 8 potx
... α R ~const./λ 4 (<0 .8 µm not very useful!) •Dispersion – material dispersion (see slide i13) – modal dispersion Characteristics of Optical Fiber x • Light source always has ∆λ • parts of pulse with ... waves logωτ -2 0 +2 ε’,ε’’ n 2 ε so α e +α i α e 3.225 20 Dielectric Constant vs. Frequency • Completely general ε due to the localized charge in materials ω ε 1/τ ω T ω oe 1 n 2 α o...
Ngày tải lên: 10/08/2014, 11:22
Electronic Materials Part 3 potx
... (xrays) can be ‘particle-like’ • DeBroglie – matter can act like it has a ‘wave-nature’ • Schrodinger, Born – Unification of wave-particle duality, Schrodinger Equation Wave-particle Duality: ... Fitzgerald-1999 3.225 23 Particle in Box zkykxkAzyx n 321 sinsinsin),,( ⋅⋅= ψ 2 3 2 2 2 1 2 kkkk ++= ; d n k i i π = 3,2,1 = i n m k nnn md n 2 )( 8 22 2 3 2...
Ngày tải lên: 10/08/2014, 11:22
Electronic Materials Part 6 potx
... = ∴ =∆= τ τ τ ,0@ ∆p x Gτ h x p eDJ hh ∂ ∆∂ = © E. Fitzgerald-1999 3.225 8 Semiconductor Electronics • Single crystalline - largely Si some III - V compounds • Dominated by ... engineered junctions • DRAMS (today) ≈ 10 9 transistors • Microprocessors (2002) ≈ 10 8 transistors •Total ≈ 10 18 yr ≈ 10 6 /person/day © H.L. Tuller, 2001 4 Devices Solar Cell/Dete...
Ngày tải lên: 10/08/2014, 11:22
Silicon Carbide Materials Processing and Applications in Electronic Devices Part 8 pptx
... the most common structural forms (Bernatowicz et al. 1 987 , 1 988 a, 1 988 b). Daulton et al. (2002, 2003) itemize the amount of 3C β-SiC (80 %), 2H α-SiC (3%), and intergrowths of these two forms ... Phys. Chem. C 112: 588 0– 588 7. He, J., Chen, B., Flatt, A., Stephenson, J., Condell, D. & Tour, J. (2006). Metal-free silicon-molecule-nanotube testbed and memory device, Nature Materi...
Ngày tải lên: 19/06/2014, 11:20
Silicon Carbide Materials Processing and Applications in Electronic Devices Part 13 potx
... High-temperature Electronic Integration. Journal of Electronic Materials, Vol. 38, No.1, pp. 164-174 Cooper Jr., J. A. & Agarwal, A. (2002). SiC Power Switching Devices - The Second Electronics ... 5 7 3 6 0 1 2 3 4 5 6 7 8 01234 Zone Contamination Graph of Contamination vs Zone for Experiment 7 11 10 7 0 1 2 3 4 5 6 7 8 9 10 11 12 01234 Zone Contamination Graph of Contaminat...
Ngày tải lên: 19/06/2014, 11:20
Volume 20 - Materials Selection and Design Part 8 potx
... 0.6-1.2 55 -83 8- 12 69-103 10- 15 13 .8- 24.1 2.0- 3.5 241- 276 35- 40 1.5-2.5 6 320-426 6 -8 83-103 12- 15 103- 1 38 15- 20 13 .8- 17.2 2.0- 2.5 241- 276 35- 40 1.5-2.5 13 80 0- 1065 ... Handbook, ASM International, 1 987 , p 1 18, 119, 355, 360, 363, 373, 381 , 405, 410, 86 1, 86 2 15. G. Savage, Carbon-Carbon-Composites, Chapman Hall, 1993, p 95, 97, 98, 10...
Ngày tải lên: 10/08/2014, 13:20
Materials Handbook 2011 Part 8 potx
... most common are the leaded wrought brasses (C31400 to C 386 00), leaded cast brasses (C83300 to C8 580 0), leaded phosphor bronzes (C53200 to C5 480 0), and leaded tin bronzes (C92200 to C92900). LEADED ... alu- minum silicate in molded shapes for electronic and furnace parts. It is marketed in grades containing 50 to 90% alumina. Cerox 200, with a melting point at 3290°F ( 180 0°C), contai...
Ngày tải lên: 11/08/2014, 14:20
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 8 pdf
... 1. The Curie-Weiss law illustrated for (Ba,Sr)TiO 3 From L.L. Hench and J.K. West, Principles of Electronic Ceramics, Wiley, 1990, p. 243. 1 33 00 = = c kT CNN εε α c c TT T − = 3 χ 3.225 2 • ... distribution in the ground state of a chromium atom (A) and a trivalent chromium ion (B). Chromium Electronic Structure © H.L. Tuller, 2001 5 3.225 17 • Usually Clausius-Mo...
Ngày tải lên: 11/08/2014, 14:20
Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 11 potx
... Thumb: 5.1 radius) 2(atomic distance cinteratomi 2 >≡ a r r J is a function of distance! 8 3.225 8 © E. Fitzgerald-1999 Ferromagnetism M T T C () ( ) () ( ) 1.4-1.3 0.37-0.33 ≈−∝ ≈−∝ − γχ β γ β TTT TTTM C C H B=H+4πM ‘normal’ ... 300 400 500 600 700 80 0 1,71 1,72 1,73 1,74 1,75 1,76 1,77 Contact 1 (f Co1 ) Contact 2 (f Co2 ) Calculation f Co1 + ∆ f( ∆ m Co2 ) T [°C] f...
Ngày tải lên: 11/08/2014, 14:20
MALADIES INFECTIEUSES - PART 8 potx
... 302 251 Scarlatine 1 08 96 86 23 20 21 78 28 58 4 Shigellose 131 151 139 1 78 137 2 68 136 97 151 144 SIDA 302 446 303 6 18 600 264 1 58 146 141 87 Syphilis 124 68 58 56 41 28 25 19 22 42 Toxi-infection ... 29 59 73 56 25 32 17 Tuberculose 200 181 209 207 188 188 157 169 200 154 Tularémie 0 0 0 1 0 0 0 0 0 0 TOTAL 7 284 7 186 6437 6650 6423 6723 7761 788 2 85 67 82 81 MALADIES...
Ngày tải lên: 18/06/2014, 10:05