Electronic Materials Part 1 ppt

... Tuller-20 01 R=V/I; 3.225 18 How to Make Resistance Measurements R s R c1 R c2 I V V/I = R c1 + R s + R c2 I. s >> R c1 + R c2 ; no problem II. For R s ≤ R c1 + R c2 ; ... drift 1/ τ represents a ‘viscosity’ in mechanical terms © E.A. Fitzgerald -19 99 2 5 3.225 15 • τ ~10 -14 sec for metals in Drude model Extracting Typical τ for Metals © E.A. Fitzgera...

Ngày tải lên: 10/08/2014, 11:22

... Materials  1 Cutting Tool Materials ‘What is the use of a book’ , thought Alice, ‘without pictures or conversations?’   (18 32 18 98) [Alice in Wonderland, Chap. 1] 1. 1 Cutting ... the material’s abrasion resistance. By 19 10, the content of tungsten had increased to 18 %, with 4% chromium and 1% vanadium, hence the well- known 18 :4 :1 HSS had arrived, its...

Ngày tải lên: 05/08/2014, 20:22

... CRYSTALLINE MATERIALS 16 5 5 .1 Attack by Liquids 16 5 5 .1. 1 Attack by Glasses 16 5 5 .1. 2 Attack by Aqueous Solutions 17 7 5 .1. 3 Attack by Molten Salts 19 1 5 .1. 4 Attack by Molten Metals 19 7 5.2 Attack ... Edition vii 1 INTRODUCTION 1 2 FUNDAMENTALS 9 2 .1 Introduction 9 2.2 Corrosion by Liquids 11 2.2 .1 Introduction 11 2.2.2 Crystalline Materials 15 2.2.3 Gla...

Ngày tải lên: 10/08/2014, 11:22

... Clausius-Mosotti, ( 2 22 2 11 n m eNZN oeo i o e r = − +=+= ω ωεε α ε ε r ω ω oe 1 ( 2 2 1 oeo i m eNZ ωε + © E. Fitzgerald -19 99 ) ) ) ) ) 3.225 14 QM Electronic Polarizability ... difficult: many-bodied problem () h 01 10 22 10 10 2 ; EEf m e e − = − = ω ωω ωα E 1 E 0 f 10 is the oscillator strength of the transition (ψ 1...

Ngày tải lên: 10/08/2014, 11:22

... CdSe. © H.L. Tuller, 20 01 8 3.225 5 © H.L. Tuller-20 01 Temperature Independence: High Acceptor Concentration in SrTiO 3 10 -20 10 -15 10 -10 10 -5 10 0 0 ,1 1 750°C 800°C 900°C 850°C ... Actuators B 24-25 , 370 (19 95).) High Strain (Pb 0.98 La 0.02 (Zr 0.7 Hf 0.3 ) 1- x Ti x O 3 AFE- FE System (C. Heremans and H.L. Tuller, J. Euro. Ceram. Soc., 19 , 11 3...

Ngày tải lên: 10/08/2014, 11:22

... 9 10 11 12 13 10 -7 10 -6 10 -5 10 -4 Y-cut σ 0 = 2 .1 S cm -1 E A = 10 5 kJ mol -1 10 4 /T [1/ K] σ [S cm -1 ] 900 800 700 600 500 T [°C] 13 3.225 21 © H.L. Tuller-20 01 Smart ... H 2 , CO, NH 3 (10 , 50 and 10 0 ppm), NO 2 (0.2, 0.4, and 2 ppm) ZnO(Ar:O 2 =7:3) 1 [ Pfad: \ alp ha missy Messungen messplat z _1 ] M. Jägle / 27.02.20 01 S1 219 a...

Ngày tải lên: 10/08/2014, 11:22

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Ngày tải lên: 10/08/2014, 12:21

... be found at www.intechopen.com Contents Preface IX Part 1 Inorganic Optoelectronic Materials 1 Chapter 1 Optoelectronic Properties of Amorphous Silicon the Role of Hydrogen: ... al., 19 99), we obtain: 15 3 1 G 5.9 x 10 cm s −− = (9) The effects of electron beam irradiation on a-Si:H has been extensively investigated (Schneider & Schroder, 19 90; Scho...

Ngày tải lên: 19/06/2014, 11:20

... 98.4 97.8 1. 648 1. 872 2.225 3.087 -6 .10 155 0.39 96 .1 95 .1 1.646 1. 877 2.258 3.063 -5.997 51 0.422 96.3 92 .1 1.635 1. 880 2.28 3.058 -5.9726 0.54 96.2 84 .1 1. 610 1. 885 2.337 3.053 -5.8 819 1 0.7 ... Density ( 10 3 Kg/m 3 ) Potential Energy (eV/atom) 0.0 10 0. 10 0. N 1. 896 N 3. 217 -6.39279 0.045 99.9 99.6 1. 662 1. 862 2 .18 5 3. 213 -6.32738 0 .13 3 99...

Ngày tải lên: 19/06/2014, 11:20

... Phys. Comm. 11 8: 16 6 18 4. McNab, I. R. & Polanyi, J. C. (2006). Molecules on h-terminated si (11 1), Chem. Rev. 10 6: 43 21. 254 Silicon Carbide – Materials, Processing and Applications in Electronic ... SiC(0 01) -3×2 and SiC (10 0)-c(2×2) Surfaces 17 0 10 00 2000 3000 -30 -20 -10 0 10 20 30 40 10 00 2000 3000 4000 5000 6000 0 10 00 2000 3000 4000 5000 6000 0 10 00 20...

Ngày tải lên: 19/06/2014, 11:20