An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 9 pps
An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 1 doc
... Heads 11 6Micromachined Valves 11 9Micropumps 12 6Summary 12 8References 12 9Selected Bibliography 13 1CHAPTER 5MEM Structures and Systems in Photonic Applications 13 3Imaging and Displays 13 3Infrared ... Capacitors and Inductors 19 0Quality Factor and Parasitics in Passive Components 19 0Surface-Micromachined Variable Capacitors 19 2Bulk-Micromachined Variable Capacitors 19 5Micromachined Inductors ... affecting the validity of any trade - mark or service mark.International Standard Book Number: 1- 5 805 3-5 9 0-9 10 9876543 21 To our familiesTanya, Ella, and JadErika, Gordon, Brynn, and Reed “It was...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 2 pptx
... 1 .2 Analysis and Forecast of Worldwide MEMS Markets (in Millions of U.S. Dollars) 20 02 2007($ 000,000) ($ 000,000)Microfluidics 1,404 2, 241Optical MEMS 7 02 1, 826 RF MEMS 39 24 9Other actuators ... MarketStudy,” January 1999, 1 429 North Quincy Street, Arlington, VA 22 207.[3] Frost and Sullivan, “World Sensors Market: Strategic Analysis,” Report 550 9-3 2, February1999, 25 25 Charleston Road, ... GmbH of Teltow, Ger-many, and is available on-line.ãMicro/Nano Newsletter: a publication companion to “R&D Magazine”with news and updates on micromachined devices and nanoscale-leveltechnologies....
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 3 pps
... 15Polyvinylidene-fluoride(PVDF)d 31 = 23 d 33 = 33 12 1.78 3 2.7LiNbO 3 d 31 =−4, d 33 = 23 28 4.6 245 34 BaTiO3 d 31 = 78, d 33 = 190 1,700 5.7 30 PZT d 31 =−171 d 33 = 37 0 1,700 7.7 53 30zinc oxide (ZnO) d 31 = 5.2, d 33 = ... abformung, meaning lithography, elec - troplating, and molding. both PSG and BPSG soften and flow to conform with the underlying surface topog - raphy and to improve step coverage. LTO films are ... Zorman, C. A., and M. Mehregany, “Materials for Microelectromechanical Systems,” inThe MEMS Handbook, Chapter 15, M. Gad-el-Hak (ed.), Boca Raton, FL: CRC Press,2002.[10] Zhang, Z. L., and...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 4 pptx
... Wet etchants in aqueous solution offer the advantage of low-cost batchfabrication—25 to 50 100-mm-diameter wafers can be etched simultaneously and can be either of the isotropic or anisotropic ... uniform and controlled etch depths. Some applications, such asbulk-micromachined pressure sensors, demand a thin ( 5- to 2 0- m) silicon mem - brane with dimensional thickness control and uniformity ... it is to achieve good bonding [21].Grinding, Polishing, and Chemical-Mechanical PolishingSome applications use a thin layer of silicon (5 to 200 àm) that is fusion-bonded to astandard-thickness...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 5 doc
... Benecke, and P. Lange, “TMAHW Etchants for SiliconMicromachining,” Proc. 1991 Int. Conf. on Solid-State Sensors and Actuators, San Fran-cisco, CA, June 24–27, 1991, pp. 8 15 818.[9] Ammar, E. S., and ... Bonding and Deep Reactive Ion Etching; A NewTechnology for Microstructures,” Proc. 8th Int. Conf. on Solid-State Sensors and Actua - tors, Stockholm, Sweden, June 25 29, 19 95, pp. 55 6 55 9.[37] ... pp. 157 5– 158 5.[20] Tong, Q.–Y., and U. Gösele, Semiconductor Wafer Bonding, New York: Wiley, 1999,pp. 49–72.[21] Miki, N., et al., “Multi-Stack Silicon-Direct Wafer Bonding for 3D MEMS Manufactur - ing,”...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 6 pptx
... orientation-dependentetching of grooves, wafer bonding, and dicing [8], and (b) nozzle formed by DRIE and waferbonding. (After: [9].)MandrelPhotoresist1. Make mandrel, pattern photoresistMetal2. ... 9.81 m/s2), sensitivity (V/G), reso - lution (G), bandwidth (Hz), cross-axis sensitivity, and immunity to shock. Therange and bandwidth required vary significantly depending on the application.Accelerometers ... bottom handle wafer. Silicon-fusion bonding of a p-type top wafer with an n-type epixatial layer encapsulates and seals the cavity. Electrochemical etchingor standard polishing thins down the top...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 7 pot
... )]°⋅sHz; bandwidth (Hz); resolution (º/s); and dynamic range (dB), the lat-ter two being functions of noise and bandwidth. Short- and long-term drift of theoutput, known as bias drift, is another ... dioxideinsulatorTaAl resistorAl conductor1. Grow oxide for insulator, sputter TaAl and Al, pattern Al and TaAl,pattern Al again to form resistor and conductive trace.2. PECVD silicon nitride and ... TaAl is resistive and has a near-zero thermal coeffi-cient of expansion [38], while Al is a good conductor. The aluminum and TaAl arepatterned, leaving an Al/TaAl sandwich to form conductive...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 8 ppt
... Improvements and Methods,” Tech.Digest Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, June 8 11,19 98, pp. 7–10.[43] U.S. Patent 6,533,366, March 18, 2003.[44] U.S. Patents 4 ,82 4,073, ... Int.Conf. on Solid-State Sensors and Actuators, Chicago, IL, June 16–19, 1997, Vol. 2,pp. 84 7 85 0.130 MEM Structures and Systems in Industrial and Automotive Applications This actuator design avoids ... fashion similar to the electronic transistor. development activities appears to be. An application for micropumps is likely to be in the automated handling of fluids for chemical analysis and drug...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 9 pps
... unloaded actuator on the right-hand side is equal to themass of the loaded actuator (left-hand side) and the mirror. Externally appliedin-plane accelerations cause equal but opposite torques on ... (known as the L-Band).The International Telecommunication Union (ITU) of Geneva, Switzerland, hasspecified the use to be on a grid of discrete channels throughout the C- and L-Bandsat optical ... processing and routing of data and voice. The use of tunable lasers intelecommunications has been primarily in the wavelength range of 1,528 nm to 1,565 nm (known as the C-Band) and 1,570 nm to 1,610...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 10 potx
... 1991,pp. 310 317. [10] Jerman, H., and J. D. Grade, “A Mechanically-Balanced, DRIE Rotary Actuator for aHigh-Power Tunable Laser,” Tech. Digest Solid-State Sensor and Actuator Workshop, Hil - ton ... it remains an enabling technology and a means to an end. It is impera - tive to understand the final application in order to assess the importance and applicability of MEMS for that particular ... Hall,1999.MacDonald, L. W., and A. C. Lowe (eds.), Display Systems: Design and Applications, WestSussex, England: Wiley, 1997.Micromechanics and MEMS: Classic and Seminal Papers to 1990, W. Trimmer...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 11 pptx
... discreteinductors (in addition to even more capacitors and resistors) along with only 15integrated circuits [12]. To alleviate the self-resonance shortcoming and to reducethe part count and space ... of expansion mismatch factor into substrateselection.Passive Electrical Components: Capacitors and InductorsQuality Factor and Parasitics in Passive ComponentsAll capacitors and inductors ... tun - ing voltage and smaller tuning ranges. The quality factor and self-resonance fre - quency vary with the design.Many versions of surface-micromachined variable capacitors have been demon - strated...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 12 pdf
... requirements,standards for MEMS packaging lack, and designs often remain proprietary to com - panies. Invariably, the difficulty and failure in adopting standards implies that pack - aging will remain engineering- resource ... al., “A Low-Noise RF Voltage-Controlled Oscillator Using On-ChipHigh-Q Three-Dimensional Inductor and Micromachined Variable Capacitor,” TechnicalDigest of Solid-State Sensor and Actuator Workshop, ... Clark, and C. T. -C. Nguyen, “High-Q HF Microelectromechanical Fil - ters,” IEEE Journal of Solid-State Circuits, Vol. 35, No. 4, April 2000, pp. 512 526.[22] Wang, K., A. -C. Wong, and C. T. -C....
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 13 potx
... available in TO- type hermetic metal packages. How - ever, pressure to reduce manufacturing costs has led the company to adopt a stan - dard plastic dual-in-line (DIP) solution and establish first-level ... and electricity—voltage, current, and electrical resistance are dual to temperature, heat flux, and thermal resistance,respectively. A network of resistors is an adequate first-order model to ... pat - terns corresponding to the landing sites of the solder bumps. Automated pick -and- place machines position the die, top face down, and align the bond pads to thesolder-paste pattern on the...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 14 docx
... for optoelectronic and passivefiber-optical components (see Table 8.8) explicitly reference the MIL-STD-202 and 883 standards. Procedures and methods also accompany the MIL standards to guide ... rates and mean time to failures) of electronic equipment [26]. An industry of professional consultants and advisors specializing in quality and reliability standards has come to exist. The manufacturer ... performing the tests and interpreting the data. For example, theMIL-HDBK-H-108 provides sampling procedures and tables for reliability and lifetesting, and the MIL-HDBK-217 discusses reliability...
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An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 16 potx
... 9000/QS 9000, 244standards, 244–46statistical methods in, 246–48tests, 246See also Failure(s); Quality controlResonators, 200–211beam, 203–6comb-drive, 201–3coupled-resonator bandpass filter, ... schematic, 164 defined, 161 diffraction operation, 163 fabrication, 165 key characteristics, 161 principle of operation, 162 Voltage-controlled oscillators (VCOs), 192Volume manufacturing, 8WWafersdicing ... 208–11microelectromechanical, 200–211See also RF MEMS RF MEMS, 189–214devices, 189losses, 190low-resistivity metals, 190microelectromechanical resonators,200–211microelectromechanical switches,...
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