An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 4 pptx

... Wet etchants in aqueous solution offer the advantage of low-cost batchfabrication—25 to 50 100-mm-diameter wafers can be etched simultaneously and can be either of the isotropic or anisotropic ... uniform and controlled etch depths. Some applications, such asbulk-micromachined pressure sensors, demand a thin ( 5- to 2 0- m) silicon mem - brane with dimensional thickness control and uniformity ... it is to achieve good bonding [21].Grinding, Polishing, and Chemical-Mechanical PolishingSome applications use a thin layer of silicon (5 to 200 µm) that is fusion-bonded to astandard-thickness...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 2 pptx

... components for identify-friend-or-foesystemsHead- and night-display systemsLow-power, high-density mass data storage devicesEmbedded sensors and actuators for condition-based maintenanceIntegrated ... Vectoralgebra (using a dot product) shows that the angles between {100} and {110} planesare 45 º or 90º, and the angles between {100} and {111} planes are 54. 7º or 125.3º.Similarly, {111} and ... products. Ongoing efforts at many companies and laboratoriesthroughout the world promise to deliver, in the not-too-distant future, new and sophisticated miniature components and microsystems. It is...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 6 pptx

... Structures and Systems in Industrial and Automotive ApplicationsBondpadMetal conductorsP-type diffusedpiezoresistorEtched cavityN-typeepitaxiallayerP-typesubstrate and frameAnodicallybondedPyrex ... 9.81 m/s2), sensitivity (V/G), reso - lution (G), bandwidth (Hz), cross-axis sensitivity, and immunity to shock. Therange and bandwidth required vary significantly depending on the application.Accelerometers ... bottom handle wafer. Silicon-fusion bonding of a p-type top wafer with an n-type epixatial layer encapsulates and seals the cavity. Electrochemical etchingor standard polishing thins down the top...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 11 pptx

... of expansion mismatch factor into substrateselection.Passive Electrical Components: Capacitors and InductorsQuality Factor and Parasitics in Passive ComponentsAll capacitors and inductors ... are 24 discreteinductors (in addition to even more capacitors and resistors) along with only 15integrated circuits [12]. To alleviate the self-resonance shortcoming and to reducethe part count ... tun - ing voltage and smaller tuning ranges. The quality factor and self-resonance fre - quency vary with the design.Many versions of surface-micromachined variable capacitors have been demon - strated...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 1 doc

... student alike to an understanding of how MEMS aredesigned and fabricated. Dr. Maluf s book concentrates mostly on how to design and manufacture MEMS. This is to be expected of Dr. Maluf, who has ... affecting the validity of any trade - mark or service mark.International Standard Book Number: 1-5 805 3-5 9 0-9 109876 543 21 To our familiesTanya, Ella, and JadErika, Gordon, Brynn, and Reed“It was the ... ofMorrison and Foerster. Evan Green and Carter Hand of New Focus were kindenough to review portions of the manuscript. Thanks go to our editor, Mark Walsh,for his unwavering support. Kirt Williams...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 3 pps

... abformung, meaning lithography, elec - troplating, and molding.both PSG and BPSG soften and flow to conform with the underlying surface topog - raphy and to improve step coverage. LTO films are ... inferred (see Figure 2 .4) . Most the resistance change in metals is due to 24 Materials for MEMS RF planar sputtering and ion-beam methods work for the deposition of both con - ducting and insulating ... quickly extended to a broad range of other alloys, including titanium-nickel, copper-aluminum-nickel,iron-nickel and iron-platinum alloys. A basic understanding of the underlying physi - cal principles...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 5 doc

... Benecke, and P. Lange, “TMAHW Etchants for SiliconMicromachining,” Proc. 1991 Int. Conf. on Solid-State Sensors and Actuators, San Fran-cisco, CA, June 24 27, 1991, pp. 815–818.[9] Ammar, E. S., and ... Characteristics and Profile Control in a Time MultiplexedInductively Coupled Plasma Etcher,” Tech. Digest Solid-State Sensor and Actuator Work - shop, Hilton Head Island, SC, June 8–11, 1998, pp. 41 44 .Summary ... Pressure Sensors,” Tech. DigestSolid-State Sensor and Actuator Workshop, Hilton Head Island, SC, June 6–9, 1988,pp. 144 – 147 .[19] Schmidt, M.A, “Wafer -to- Wafer Bonding for Microstructure Formation,”...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 7 pot

... )]°⋅sHz; bandwidth (Hz); resolution (º/s); and dynamic range (dB), the lat-ter two being functions of noise and bandwidth. Short- and long-term drift of theoutput, known as bias drift, is another ... dioxideinsulatorTaAl resistorAl conductor1. Grow oxide for insulator, sputter TaAl and Al, pattern Al and TaAl,pattern Al again to form resistor and conductive trace.2. PECVD silicon nitride and ... overall performance.108 MEM Structures and Systems in Industrial and Automotive Applications1. Primary standingwave patternNodeAntinode2. Secondary standingwave pattern at 45 °AntinodeNode3....

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 8 ppt

... the Future,” R. R. Ragan (ed.), IEEE Transactions on Aerospace and Electronic Systems, Vol. AES-20, No. 4, July 19 84, pp. 41 4 44 4.[25] Emiliani, C., The Scientific Companion, 2nd ed., New York: ... 19 94, pp. 41 45 . [41 ] “Under-Glass Controls: Creative Cooktop Delivers High Power and Fast Boiling,” Appli - ance Manufacturer, July 1996, pp. 61–63. [42 ] Anderson, R. C., et al., “Genetic Analysis ... Improvements and Methods,” Tech.Digest Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, June 8–11,1998, pp. 7–10. [43 ] U.S. Patent 6,533,366, March 18, 2003. [44 ] U.S. Patents 4, 8 24, 073,...

An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 9 pps

... unloaded actuator on the right-hand side is equal to themass of the loaded actuator (left-hand side) and the mirror. Externally appliedin-plane accelerations cause equal but opposite torques on ... (known as the L-Band).The International Telecommunication Union (ITU) of Geneva, Switzerland, hasspecified the use to be on a grid of discrete channels throughout the C- and L-Bandsat optical ... processing and routing of data and voice. The use of tunable lasers intelecommunications has been primarily in the wavelength range of 1,528 nm to 1,565 nm (known as the C-Band) and 1,570 nm to 1,610...

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