An Introduction to MEMs Engineering - Nadim Maluf and Kirt Williams Part 1 doc

... Heads 11 6 Micromachined Valves 11 9 Micropumps 12 6 Summary 12 8 References 12 9 Selected Bibliography 13 1 CHAPTER 5 MEM Structures and Systems in Photonic Applications 13 3 Imaging and Displays 13 3 Infrared ... Capacitors and Inductors 19 0 Quality Factor and Parasitics in Passive Components 19 0 Surface-Micromachined Variable Capacitors 19 2 Bulk-Micromachined Variable...

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... and P. Lange, “TMAHW Etchants for Silicon Micromachining,” Proc. 19 91 Int. Conf. on Solid-State Sensors and Actuators, San Fran- cisco, CA, June 24–27, 19 91, pp. 815 – 818 . [9] Ammar, E. S., and T. ... Characteristics and Profile Control in a Time Multiplexed Inductively Coupled Plasma Etcher,” Tech. Digest Solid-State Sensor and Actuator Work - shop, Hilton Head Island, S...

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... Telecommunications Test GR-63/463-CORE Reliability Assurance for Optoelectronic Devices GR -1 2 09 /12 2 1- CORE Reliability Assurance for Branched and Passive Fiber-Optic Devices Mechanical shock 500G for 1 ms, 5 times/axis ... for optoelectronic and passive fiber-optical components (see Table 8.8) explicitly reference the MIL-STD-202 and 883 standards. Procedures and methods also...

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... and ( )11 1 . Silicon-Compatible Material System 15 ( b ) (a) ( 010 ) (11 0) (11 1) z, [0 01] y, [ 010 ] x, [10 0] z, [0 01] y, [ 010 ] x, [10 0] z, [0 01] y, [ 010 ] x, [10 0] (11 0) (11 0) (11 1) = (11 1) (11 1) = (11 1) (11 1) ... requires annealing at elevated temperatures (>900ºC). Silicon-Compatible Material System 17 (11 1) (c) [10 0] [ 010 ] [0 01] (11 1) Surface i...

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... {10 0} Wafers and Doping Levels Below 10 18 cm -3 π // (10 -1 1 m 2 /N) π ⊥ (10 -1 1 m 2 /N) p-type 10 7 – 1 In < ;10 0> direction 17 2 –66 In < ;11 0> direction n-type 10 2 –53 In < ;10 0> ... Zorman, C. A., and M. Mehregany, “Materials for Microelectromechanical Systems,” in The MEMS Handbook, Chapter 15 , M. Gad-el-Hak (ed.), Boca Raton, FL: CRC P...

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... rate (µm/min) 1 to 20 0.5 to 3 0.75 0.5 to 1. 5 0 .1 to 0.5 1 to 15 0 .1 to 10 {11 1}/ {10 0} Selectivity None 10 0 :1 35 :1 50 :1 None None None Nitride etch (nm/min) Low 1 0 .1 0 .1 200 200 12 SiO 2 Etch (nm/min) 10 –30 ... view {11 1} 10 9.5° 70.5° Slanted {11 1} Slanted {11 1} Figure 3.7 Illustration of the anisotropic etching in {11 0}-oriented silicon...

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... capacitance values are on the order of 1 pF (10 12 F) and changes in capacitance can be as small as a few fF (10 15 F). Yet another sensing approach utilizes electromagnetic signals to detect and measure ... electronic circuits to detect minute changes in capacitance (< ;10 15 F) and to translate them into an amplified output voltage. Another common method uses piez...

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... )]°⋅sHz ; bandwidth (Hz); resolution (º/s); and dynamic range (dB), the lat- ter two being functions of noise and bandwidth. Short- and long-term drift of the output, known as bias drift, is another ... dioxide insulator TaAl resistor Al conductor 1. Grow oxide for insulator, sputter TaAl and Al, pattern Al and TaAl, pattern Al again to form resistor and conductive trace. 2. PE...

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... 718 –724. [7] U.S. Patents 3,9 21, 916 , November 25, 19 75, and 3,949, 410 , April 6, 19 76. [8] Peeters, E., and S. Verdonckt-Vandebroek, “Thermal Ink Jet Technology,” Circuits and Devices, Vol. 13 , ... “Genetic Analysis Systems: Improvements and Methods,” Tech. Digest Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, June 8 11 , 19 98, pp. 7 10 . [43] U.S. Pa...

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... processing and routing of data and voice. The use of tunable lasers in telecommunications has been primarily in the wavelength range of 1, 528 nm to 1, 565 nm (known as the C-Band) and 1, 570 nm to 1, 610 ... unloaded actuator on the right-hand side is equal to the mass of the loaded actuator (left-hand side) and the mirror. Externally applied in-plane accelerations cause eq...

Ngày tải lên: 10/08/2014, 01:22