ENCYCLOPEDIA OF MATERIALS CHARACTERIZATIONC phần 8 pdf

... (1 988 ). An applications oriented discussion of using MPI-SAL1 for depth profil- ing, interface analysis in inorganic material systems. Examples of SAL1 depth profiles are given of a ... time) of a silicon sample containing a boron ion implant. elements as a function of time, a profile of the in-depth distribution of the elements is obtained. The depth scale...

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... quantitative analysis of major, minor, and trace constituents of materials Instrument cost $300,000- $80 0,000 Size 3 mx 1.5 mx 2 m high 15 ENCYCLOPEDIA OF MATERIALS CHARACTERIZATION ... analyzed, materials consisting of light elements are always probed more deeply than materials consisting of heavy ele- ments. 2 INTRODUCTION AND SUMMARIES Chapter 1...

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... Measure- ment of the intensiey and the shape of the profile gives a quantitative analysis of phase boundaries and the influence of finite sizes on the tran~ition.~ Dynamics of phase transitions, ... Berlin, 1 983 . 7 X-Ray Absorption. Principles, Applications, Techniques of EXAFS, SEXAFS andM€S. (D. C. Koningsberger and R Prins, e&.) Wiley, New York, 1 98...

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... content of ilmenite ore. The purpose of the diffraction experiment was to determine the growth of particular undesirable phases as a function of time at the decomposition temperature of the ... containing the element of inter- est often are used for calibration. For thin films the amount of sample ablated by spark discharges or laser sources is often a strong function...

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... Conferences, in NucL Imtx Metb. B45,1990; B35,1 988 ; B15,1 986 ; 2 18, 1 983 ; 191,1 981 ; 1 68, 1 980 . 9 Proceedings from International Conferences on the Application of Accel- erators in Research and Industry, ... grating equation. The intensity of the light in the different orders is a very sensitive function of the shape of the lines of the pattern. If the shape o...

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... composite materials. Profilometry of softer materials, such as polymers, is also possible with SFM, and with STM if the sample is conducting. Low forces on the SFM tip allow imaging of materials ... profiles of all features with sides steeper than 55" will be dominated by the profile of the tip. Because many kinds of features have steep sides, tip imaging is a com...

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... Chapter 3 4 a = 81 8 nm b X =82 4nm c X =83 2nm - 100 pm Figure 4 Monochromatic CL images of the GaAs /Si sample recorded at 81 8 nm (a), 82 4 nm (b), and 83 2 nm (c). Microcracks ... 0 .8 0 .8 1 Depth (mlcrometerc) Figure 3 Depth distribution of generation of Cu KOr X rays for an incident beam energy of 20 keV, and the effect of absorption....

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... J Polym. Sri. Polym. Chem. 13 ,85 7, 1975. One of many papers from Clark's group of this era which deal with all aspects of XPS of polymers. 8 See the article on surface roughness ... valence-band density of states, and thus the shape of the LW “peak” is derived from a self convolution of the valence- band density of states, and the width of the LW peak i...

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... 1037,2,1 988 . Tecbnol. A6, 1327, 1 988 . 7 D. E. Aspnes, J. I? Harbison, A. A. Studna, and L. T. F1orez.J Vac. Sci. 8 E H. Pollak and H. Shen. J Crystal Growth. 98, 53,1 989 . ... Elcchochem. Soc. 88 -20,56, 1 988 . Describes the use of PL for quantitative impurity analy- sis in semiconductors. 4 K D. Mielenz, ed. Measurement ofPhotoluminescence. vo...

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... York, 1 982 . An excellent book covering all aspects of the theory and experiment in HREELS. 8. 3 HREELS 457 13 B. E. Koel. ScanningEkctron Microscopy 1 985 /N, 1421,1 985 . The use of HREELS ... consisting of 240 nm of Si on 170 nm of Si02 on a Si sub-ate. The spectrum in (a) was acquired using a scattering angle of leOo while the spectrum in (b) use...

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