encycopedia of materials characterization surfaces interfaces thin films c brundle et al bh 1992 pdf
encycopedia of materials characterization surfaces interfaces thin films c brundle et al bh 1992 pdf
... Brundle, C. R. Encyclopedia of materials characterization: surfaces, interfaces, thin films/ C. Richard Brundle, Charles A. Evans, Jr., Sham Wilson. p. un (Materials characterization ... elemental analysis of surfaces without standards, and chemical state analysis, for materials as diverse as biological to metallurgical. XPS also is known as electron sp...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 14 ppt
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 2 pps
... 0.5 nm 2. 5-5 nm +150 pm 0. 1 -2 5 pm, depending on stylus radius 15-mm thickness, 20 0-mm diameter $30,00 0-$ 70,000 0.1 nm 0.3 nm 15 pm 0.3 5-9 pm, depending on optical system 125 -mm thickness, ... Chapter 2 Magneto-optic Kerr Effect (MOKE) 1. 12. 3 The Magneto-optic Kerr Effect (MOKE) is an optical technique to determine the orientation and relative mag...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 3 pps
... spreading of the probe, but much of the coherency of the incident source is also retained. 2.4 TEM 101 900 0- 8Ooo- 700 0- 3Ooo- 200 0- IOOO- Si-Ka Bi-Ma Fe-Ka ? .a Bi-La I I ... produces a char- acteristic spot pattern. In this case, the four-fold symmetry of the difhction pat- tern is indicative of the symmetry of this body-centered cubic lattice....
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 5 ppt
... layer of atoms consisting of families of rows is a set of rods (hk) normal to the crystal sur- kce having spacing 2Wdhk The intersection of the Ewald sphere and the recipro- cal-lattice ... 233 4 W. F. EgelhofX Pbys. Rev. B30,1 052 ,1984; R A. Armstrong and W. E. EgelhoE Sa$ Sci. 154 , L2 25, 19 85. 5 C. S. Fadley. hog. Sutf Sci. 16,2 75, 1984; C...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 6 ppsx
... Zn W Table 1 Ni2+ -2 .2 eV Fez+ -3 .0 eV Fe3+ -4 .1 eV Ti4+ -6 .0 eV si4+ -4 .0 eV Al3+ -2 .0 eV cu+ -0 .0 eV cu2+ -1 .5 eV Zn2+ -0 eV w4' 2 eV w6' 4 eV Typical ... film. Methods for Surface and Thin- Film Characterization AES analysis is done in one of four modes of analysis. The simplest, most direct, and most ofte...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 7 ppt
... Ni (% wt.) 89 .75 89 .75 - 89.50 - 1652 1698 1 674 - - tc, (4 tFeNi(& 2121 2048 - 2115 - tCu@) 2 470 24 57 - - 2416 Table 3 XRF mutts for films of Cr, FeNi, and ... Queisser. Appl. Pbys. 10, 275 , 1 976 . Describes PL measurements of a variety of semiconductor properties. 8 K Mettler. Appl. Pbys. 12 ,75 1 977 . PL...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 8 pptx
... 1 980 , Volume 2, p. 109. 4 E H. Pollak. hc. SOC. Photo-OpticalImtz Eng. 276,142, 1 981 . 5 E H. Pollak and 0. J. Glembocki. hc. SOC. Photo-OpticalImtz Eng. 946, 2, 1 988 . ... Studna. Proc. SOC. Photo-Optical Imtz Eng. 1037,2,1 988 . Tecbnol. A6, 1327, 1 988 . 7 D. E. Aspnes, J. I? Harbison, A. A. Studna, and L. T. F1orez.J Vac. Sci. 8...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 9 pps
... surfices. 5 B. C. Gerstein and C. R. Dybowski. Transient Ecbniques in NMR of Sol- id. Academic Press, 198 5. An in-depth treatment of the theoretical foun- dations of solid state ... Chapter 9 m- RBS - b 4000 - .I 1 23Wo- 0 m- Si substrata L I 1 0 50 100 1M zoo 250 mo Figure 5 ERS and RBS spectra for a lO00-A sputter-depo...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 10 pdf
... conditions (0-V offset) and under voltage offset conditions (50-V ofiet). The improvement in the detec- tion limit of arsenic with the use of a 50-V ok results from discrimination of the ... Surface, depth- depth- depth- depth- depth- profiling, profiling, profiling, profiling, profiling imaging imaging imaging imaging Common ppm-ppb ppm-ppb 0.05% at. 0.1% at. 2%...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 11 pps
... ZnTe provide examples of 111 -V and 1 1- VI semiconductors, respec- tively. The absence of the transition metals in particular is very important to the proper hnctioning of devices built on ... are ana- lyzed using a time -of- flight mass spectrometer. The quasi-simultaneous collection of all ion masses allows the survey analysis of unknown materials. The main appli- cati...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 12 pot
... 3 0. 1-0 .3 0.00 5-0 .05 6 5-1 00 11 0-1 800 < 1 0-7 0 5 0-3 00 < 2-1 5 5-1 0 80,00 0-1 30,000 Not analyzed Not analyzed 100 0-3 000 6-2 6 2 5-8 0 17004200 30 0-1 000 0. 3-1 1-4 0. 3-0 .7 e ... -0 .168 -0 . 212 - - Water H20 D2O 1.11 1.914 2.41 2.19 0.0089 Benzene C6H6 0.879 1.74 0.445 0.943 0.0038 0.946...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 13 pdf
... COMPENSATOR II 1-0 r-I-I-I-I-I-i LASER s a P e c + - c 0 + I + 0 a L L a -3 -2 -1 0 1 2 3 Magnetic Field (Kilo Oersteds) Figure 4 Schematic of an ultrahigh-vacuum MOKE ... transpar- ent overlayers. An inreresting variation of the scanned sample, point-by-point experimental setup is the technological application of magneto-optic record...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) Episode 4 pot
... texture, this determination is straightfor- 206 ELECTRON/X-RAY DIFFRACTION Chapter 4 10 20 30 40 50 28 (degrees1 0 Figure 4 Diffraction patterns (Bragg-Brentano geometry) of three ... developments of this instrumentation indude field emission electron sources at 20 0-3 00 kV that will allow better elemental detectability and better spa- tial resolution. Multipl...
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