Solid State Circuits Technologies Part 16 pptx

... linearization technique, Proceedings of IEEE Int. Symposium on Circuits and Systems, Vol. 3, 2002, 723–726 Solid State Circuits Technologies 462 Takahashi, Y.; Ukishima, S.; Iijima, M. & ... 1994; Chai et al., 2004). This surface state is considered to enhance the bonding reaction at the interface. (a) (b) (c) (d) Solid State Circuits Technologies 442...

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... Therefore, the output load current I 2 can be expressed as Solid State Circuits Technologies Solid State Circuits Technologies 16 M 12 M 1 M 2 I REF M 3 M 4 M 5 M 6 M 7 M 8 M 9 M 10 M 11 ... techniques [24]. Solid State Circuits Technologies 2 The following sections provide overviews of previous reported low-power reference circuits and a detailed e...

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... IEEE J. Solid- State Circuits, vol. 44, no. 7, pp. 2047-2054, Jul. 2009. [14] W.M. Sansen, F. O. Eynde, M. Steyaert, “A CMOS temperaturecompensated current reference,” IEEE J. Solid- State Circuits, ... example, two distance-evaluating methods are shown in the remaining part of Fig. 6, which is an enlarged Solid State Circuits Technologies 24 [13] K. Ueno, T. Hirose...

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... 1424404398, San Francisco, CA, United States, Dec 2006, Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States. Solid State Circuits Technologies 68 Gate voltage ... 7.3 × 10 6 cm/s. Using the constant current method with reference current, I ref Solid State Circuits Technologies 58 Fig. 8. Constant spacing is observed in the sa...

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... measurements, IEEE Trans. Comp., Hybrids, Manufact. Technol., Vol. 16, No. 5, Aug., 1993, pp. 555-562, ISSN 1070-9894. Solid State Circuits Technologies 250 shift to the path of R sk . With these ... logic cell ReceiverTransmitter Laser Fig. 19. Block diagram of OI system (Haurylau et al., 2006) Solid State Circuits Technologies 244 Fig. 5. RC model For capa...

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... Ni, Al, etc.). Compared with the aforementioned technologies, the LPCVD process is a mature and stable CVD method with Solid State Circuits Technologies 292 Where, E’ and E are the transmitter ... are same, (1) is valid. Such points were calculated from the © 2009 IEEE Solid State Circuits Technologies 316 6. Tunneling piezoresistive theory 6.1 Analysis of e...

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... time 20 μs 20 μs 5 mV 5 mV First wave (d) r = 50 µm (a) r = 80 µm (b) r = 75 µm Solid State Circuits Technologies 366 Fig. 17. Received ultrasonic waveforms by developed sensor and ... -80 -60 -40 -20 0 20 30 40 50 60 43 R = 1,200 μm Output signal [dB] Frequency [kHz] Solid State Circuits Technologies 370 The capacitance (C), the dissipation factor (...

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... compensation. (a) (b) (c) V TEMP V ISFET Fig. 16. V TH extractor based readout circuit with temperature compensation Solid State Circuits Technologies 428 Where c pH is the coefficient ... dependence on drift rate indicates an RMS error of 6.6% between modeled and measured fit. Solid State Circuits Technologies 424 substrate CMOS process, while in Fig. 4(b)...

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... in s p in C VV V V CCC =+ − ⋅ ++ . (1) Advances in Solid State Circuits Technologies Edited by Paul K. Chu Intech Advances in Solid State Circuits Technologies 14 is commonly used as 3.3 ... supply voltages. Advances in Solid State Circuits Technologies 24 Yuan, J. & Stensson, C. (1989). High - speed CMOS circuit technique. IEEE J. Solid- Stat...

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... 20 2 4 6 8 10 12 14 16 18 20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 X Y 5 10 15 20 2 4 6 8 10 12 14 16 18 20 1 1.5 2 2.5 X Y 5 10 15 20 2 4 6 8 10 12 14 16 18 20 1 1.5 2 2.5 3 X Y 5 10 15 20 2 4 6 8 10 12 14 16 18 20 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 X Y ... 20 2 4 6 8 10 12 14 16 18 20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 X Y 5 10 15 20 2 4 6 8 10 12 14 16 18 20 1 1.5 2...

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