Solid State Circuits Technologies Part 1 pot

... I REF (=I 1 +I 2 ) is given by 10 12 1 2 01 02 (1 ) == = (1 ) (1 ) BE BE BE REF VV BT V AT III RRR TR T αα Δ− ++ + ++ 01 01 02 1 = ( ) (1 ) (1 ) (1 ) BE V BT T AT T RR α α −+ − − 01 01 02 1 () ... can be expressed as Solid State Circuits Technologies 10 M 3 V REF M 2 M 1 M 5 M 6 M 7 M 8 M 9 M 10 M 11 M 4 I 1 I 1 I 1 I 2 R 1 R 2 R 3...

Ngày tải lên: 21/06/2014, 14:20

... (Pozar, 19 98) as follows: 11 22 12 21 11 11 22 12 21 1 (1 ) (1 ) (1 ) (1 ) o SSSS Y ZSSSS −++ =× ++− (22) 12 12 11 22 12 21 12 (1 ) (1 ) o S Y ZSSSS − =× ++− (23) 21 21 11 22 12 21 12 (1 ) (1 ... 22 12 21 1 2 1( 1 ) (1 ) ( 2) (1 ) (1 ) 2 o SSSS YYY Y ZSSSS YY −++ + ×=+ ++− (26) 12 12 11 22 12 21 2 11 12 1 21 (1 ) (1 ) o S YY ZSSSS...

Ngày tải lên: 21/06/2014, 14:20

... cause Solid State Circuits Technologies 426 R 1 , R 2 and C 1 , and the other LPF is provided by R 3 , R 4 , R DS and C 2 . The pass band edge f P is set by (2.9): 43 2 1 21 11 2( || ... specifications in Table 2. Fig. 11 . Time response of reproducibility Solid State Circuits Technologies 432 Fig. 12 . ISFET drift characteristics at pH=7,...

Ngày tải lên: 21/06/2014, 14:20

... 90 μ A 10 0 μ A 11 0 μ A 12 0 μ A 13 0 μ A -0.5V 0 0.5V ΔV=0.35V Output current ( μ A) Δ I 2 =11 .4 μ A Δ I 1 =10 .5 μ A 13 1 μ A 12 5 μ A 11 9.6 μ A 11 4.5 μ A ERROR 2 = 0.9 μ A ERROR 1 = 11 9.6 μ A -11 4.5 μ A =5 .1 μ A ... bus are 10 000 010 1 2 ” representing the global winner is vector #5 (0 010 1 2 ) of core #0 (00 2 ) in chip #2 (10 2 ) and 10 1 010 111 2 ” repres...

Ngày tải lên: 21/06/2014, 14:20

... transistor. Solid State Circuits Technologies 62 By inspection of equations (10 ) and (11 ), a loop-hole can be found in Lundstrom’s 19 97 theory. If equations (10 ) and (11 ) are correct, ... C.T. (19 91) . Fundamentals of Solid- State Electronics, 1 st ed., World Scientific, ISBN: 9 810 206372, Singapore, p.245. (b) Sah, C.T. (19 91) . Fundamentals of Solid- State...

Ngày tải lên: 21/06/2014, 14:20

... 18 0ps 10 -12 10 -14 10 -8 10 -10 10 -4 10 -6 10 0 10 -2 Timing in Uplink, T U (36ps/step) Bit Error Rate Timing in Uplink, T U Timing in Downlink, T D 16 ch. Test Test Pattern : PRBS 2 31 -1 After ... Adjustment 18 0ps 36ps/step Optim. Timing 18 0ps 10 -12 10 -14 10 -8 10 -10 10 -4 10 -6 10 0 10 -2 Timing in Uplink, T U (36ps/step) Bit Error Rate...

Ngày tải lên: 21/06/2014, 14:20

... 14 0 16 0 0.0 0.4 0.8 1. 2 1. 6 80 10 0 12 0 14 0 16 0 × × × 0 0.4 1. 2 1. 6 Damping ratio ζ Radius of acoustic hole r [μm] 40 50 60 70 80 0.707 n = 37 n = 16 1 n =12 1 δ =18 0 n = 21 δ =18 0 δ =18 0 ... μ m 3 0 45° 60° 12 0° 13 5° 0 ° 90 o 60 o 60 o 90 o 30 o 0 o 30 o 3 0 45° 60° 12 0° 13 5° 0 ° 0+4 -4 [dB] ( d ) R = 500 μ m 90 o 60 o 60 o 90 o 30 o 0 o 30...

Ngày tải lên: 21/06/2014, 14:20

... Polymer Journal, Vol. 38, No. 9, (September 2002) pp .19 15 -19 19, ISSN 0 014 -3057 Solid State Circuits Technologies 444 Wong, H. & White, H. (19 89) A CMOS -integrated ISFET operational amplifier, ... prototype Solid State Circuits Technologies 454 blood cells (Fig. 11 (b)), even after ultrasonic cleaning in surfactant induced water (Fig. 11 (c)) (Shinoh...

Ngày tải lên: 21/06/2014, 14:20

... represented as: t 1 : ),( 21 1 1 inint VVCOMP , ),( 43 2 1 inint VVCOMP , …, ),( )( / inN Nin N t VVCOMP 1 2 1 − t 2 : ),( )/( 2 1 1 1 12 2 tt N t ZZCOMP + , ),( )/( 4 1 3 1 22 2 tt N t ZZCOMP + , ... transconductor is shown in Fig. 8. C V 2 M 8 M 12 M C V 1in V 1 M 2in V 3 M 4 M 7 M 5 M 9 M 6 M 10 M 11 M 2out I 1out I Bias V 13 M 14 M 15 M 16 M Fi...

Ngày tải lên: 27/06/2014, 01:20

... composition of Germanium: E g (x)= (1. 155 – 0.43x + 0.0206x 2 )eV for 0 < x < 0.85 (17 ) and E g (x)= (2. 010 – 1. 27x)eV for 0.85 < x < 1 (18 ) The usage of SiGe alloy for solar ... Solar Cells – Silicon Wafer-Based Technologies 14 Fig. 11 . Typical of high efficient solar cell with dual cell tandem structure [12 ] . Fig. 12 . Lattice constants, band...

Ngày tải lên: 19/06/2014, 11:20