Advances in optical and photonic devices Part 4 doc
Advances in Lasers and Electro Optics Part 4 doc
... (c) 148 6.4nm and
(d) 1513.3nm (Philbin et. al, 2008).
Advances in Lasers and Electro Optics
168
is formed by two Bragg mirrors, each consisting of sputtered pairs of alternating TiO
2
and ... obtain the contours of
ω
’ from the Doppler formula (33). We use relations (12) and (72),
but integrate from the group velocity-matching point,
Advances in Lasers and Electr...
Advances in Lasers and Electro Optics Part 2 docx
...
(46 6 nm),
2
P
0
(47 9 nm) and
1
D
2
(587 nm) in the sample containing 10.0 at.% Pr
3+
. We found out very strong bands at 144 0
nm and at 1 540 nm, which correspond to
3
F
4
and
4
F
4
... side-group, phthalocyanines and
bisphthalocyanines are promising for manufacturing optical devices, such as optical-
limiting devices. The basic principle of optical- limi...
Advances in Lasers and Electro Optics Part 8 doc
...
and switching in next generation optical networks. SOA has been receiving much attention
in all -optical signal processing for its various nonlinear effects and potential to be
integrated, and ... ( 14)
It should be noted that, the factor of 2 on the right hand of Eq.( 14) is observed, because we
consider two sub-bands in valence band including heavy hole band and light ho...
Advances in Lasers and Electro Optics Part 11 doc
... extensive interests and many
interesting and important works have been carried out in QSDC for instance in Refs. [12-30],
and in DSQC for instance in Refs. [31-39]. In the following sections, ...
classical information exchange between the sender and the receiver in principle except
in the process for security checking and error rate estimating.
2. The eavesdropper c...
Advances in Lasers and Electro Optics Part 13 docx
... (A−7), and the integral of d
has been taken to infinity.
Substituting this result into Eq. (A−8) we obtain
Advances in Lasers and Electro Optics
598
methacryloxyethoxycarbonyl)aminopropyltriethoxysilane ... Turukhin et al., 2002). We note that Eqs. (2) and (3) coincide with
the standing single-frequency light based on a standing wave grating in a three-level system...
Advances in Lasers and Electro Optics Part 6 docx
... [30] was outlined to obtain in- plane subband dispersions in the valence band.
Optical gain for transitions between subbands in conduction and valence bands is derived.
Various scattering mechanisms ... Franzo, and F. Priolo, Optical gain in silicon
nanocrystals,” Nature, 40 8, (2000) 44 0 -44 4.
[4] J. Ruan, P. M. Fauchet, L. Dal Negro, C. Mazzoleni, and L.Pavesi, “Stim...
Advances in Lasers and Electro Optics Part 14 docx
... sensing in optical tweezers
Optical tweezer systems (Ashkin, 1970) have been used extensively for obtaining
quantitative biophysical measurements. In particular, particle sensing using optical ... force dominates over the scattering force, resulting in particle
trapping.
To obtain a physical understanding of the trapping forces involved, consider the case with a
spherical part...
Advances in Lasers and Electro Optics Part 15 doc
... Advances in Lasers and Electro Optics
718
of staining. The specimens were incubated in UEA-1 conjugated and non-conjugated
liposomes (containing 0 .4 µM Lissamine Rhodamine PE) at ... the probing depth in the absence of scattering and in the
presence of scattering, respectively. They can be defined as:
Combining Optical Coherence Tomography with Fluorescence Imaging...
Advances in Lasers and Electro Optics Part 17 docx
... 1993) and also by using fast-mixing
SAXS (Akiyama et al., 2002). Cyt-c is a single domain protein similar to Mb. Unlike Hb and
Mb, Cyt-c does not usually bind external ligands such as CO since ... primary blood vessel, including the underlying multilayered
structure of the porcine retina.
Advances in Lasers and Electro optics
786
Wyant,J. C. (1971). Testing aspherics using...
Silicon Carbide Materials Processing and Applications in Electronic Devices Part 4 docx
... un.
SiC
0.03
SiC
0.12
SiC
0 .4
SiC
0.7
SiC
0.95
SiC
1 .4
20ºС 1709 3588 47 19 6622 3 848 43 84
200ºС 1 840 3990 49 29 6966 41 98 5 347
40 0ºС 146 4 3921 46 38 7 647 45 71 5757
600ºС 1672 3979 45 95 8296 5152 544 2
700ºС 1963 42 48 5035 ... 5035 8227 53 94 5665
800ºС 1127 3795 6061 742 8 545 8 58 64
900ºС 19 24 40 04 5150 7772 5571 6619
1000ºС 2708 3958 44 99 76 74 5386 76 64...
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