Advances in Solid State Part 12 pot

... performance of transistor in LSI, continual scaling has been achieved since early 1970’s. Sizes of transistors in products measured 12 μm in 1970 and around 45 nm in 2009. The scaling of device size ... pp. 122 9 -123 4, J. Appl. Phys. [21] Kim, H. & McIntyre, P. C. (2002). Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interfac...

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... the case of shrinking, where only planar dimensions are scaled. The comparison of melting current reduction in the cases of isotropic scaling and shrinking is shown in Fig. 6. In order to compare ... capacitances are maintained constant thanks to the specific design of the unit cell: a cascode stage with 12 dB Advances in Solid State Circuits Technologies 178 Internat...

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... temperature Advances in Solid State Circuits Technologies 230 according to the user specifications, which include sampling time of the controller and initial state of each processing block. Since ... and equivalent schematic of Darlington SCR Latch up state Advances in Solid State Circuits Technologies 214 0V at most time. So the main NMOS in is off state. A...

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... disclosed in the meeting, it is well presumed that the tensile strain may be introduced by thermally Advances in Solid State Circuits Technologies 296 Polar modulation is recently gaining ... innodations are divided into three phases. Phase I (1K→1M): Shrinkage of planar area of memory cell together with the decrease in capacitor insulator thickness. Thinning of the ins...

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... (1988). Kinetics of generation of low-temperature oxygen donors in silicon containing isovalent impurities. Fizika i Tekhnika Poluprovodnikov, 22, 2, 307- 312, 0015-3222 Advances in Solid State ... image, the individual squamous cells from normal esophageal mucosa can be seen in the luminal to the basilar Advances in Solid State Circuits Technologies 390 Babitsk...

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... above-mentioned OMTs is mainly obtained inserting proper matching elements such as septa, irises or other protruding objects in the common waveguide. Besides the increased manufacturing complexity, the ... Roughly speaking, from a functional point of view the first group of corrugations (called ``throat region'') in the horn is designed in order to convert the input incide...

Ngày tải lên: 19/06/2014, 19:20

... of machines are assumed to be independent random variables, and are indicated as 12 ,,,aa 1 ,, in aa . Their means are 1 12 , ,,,, in    , and their variances are 1 22 ,, in   ... (14) Recent Advances in Vibrations Analysis 212 Fig. 11. Program STIFF – warping of ship cross-section Influence of the transverse bulkheads is taken into account by using th...

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... processor having 512 512 pixels with 15 µm pixel size was used to independently and simultaneously select any part of the gain spectrum from each EDFA into the corresponding fiber ring. Two identical ... segments; ( ) ± =++ ∑ in( out) in( out) in( out) in( out) total,i s(M),i p,i A,i I PPP; M is the τ a 1 ,1 out total I ,1 in total I V N2,1 EDFA 1 (1),1 in s P (),1 in sM P...

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... each programming point of a gate array. Using this technique, a configuration context can be retained indefinitely in the ORGA-VLSI so that the state of the gate array can be maintained statically. ... detection circuit is called Advances in Solid State Circuits Technologies 28 ( ) 2121 ininDSoutoutout VVVIII − = − = β (5) , where V GS1 = V in1 and V GS2 = V in2...

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... Advances in Solid State Circuits Technologies 126 Fig. 20. Refractive Index Profile for Triangular Core Graded Index Fiber Structure Also for easy handling of the problem and calculating ... are available. Advances in Solid State Circuits Technologies 120 dispersion length. Second, the nonlinear effect length decreases and increases, respectively, by raising t...

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