analytical techniques in solid state characterization

... function of two input voltages Vin1 and Vin2 is obtained as I1 = I2 = => I out = I − I = β β (VGS − VT )2 (VGS − VT )2 β I SS (Vin − Vin ) − (23) β (Vin − Vin ) I SS 34 Advances in Solid State Circuits ... each programming point of a gate array Using this technique, a configuration context can be retained indefinitely in the ORGA-VLSI so that the state of the gate array can be maintained statically ... a single instruction set computer (SISC) can be implemented onto them A single instruction set computer is one in which a processor has only a single instruction During production, various single...

Ngày tải lên: 21/06/2014, 06:20

... is depressed in the cladding region by increasing the Gaussian parameter (except σ=0) On the other hand the field distribution slope increases inside the cladding region by increasing of the Gaussian ... respectively In the defined fitness function in Eq (6), internal summation is proposed to include optimum broadening factor for each length up to 200 km By applying the fitness function and running the ... noticeably by increasing the effective area This is the origin of raising the quality factor in these structures This is a key point why the average amount of the quality factor in the proposed...

Ngày tải lên: 21/06/2014, 06:20

... dB In summary, frequency is adjusted in a coarse discrete way by connecting identical transconductors in parallel and with fine continuous tuning by varying the biasing current 174 Advances in ... shrinking, where only planar dimensions are scaled The comparison of melting current reduction in the cases of isotropic scaling and shrinking is shown in Fig In order to compare PCM cells having ... programmable integrator obtaining frequency scaling as expected All the specifications in both transconductor implementations are summarized in table The main advantage of the topology proposed was the inherent...

Ngày tải lên: 21/06/2014, 06:20

... with initializations In this process, the controller initializes the settings 230 Advances in Solid State Circuits Technologies according to the user specifications, which include sampling time ... discussed in detail in this chapter Its working principle is similar to the dynamic tuning/detuning control technique However, instead of using the traditional PI controller to perform the tracking ... variations in the system for calculating the range of LS2 in worst-case scenario Design of Directional Tuning Control (DTC) algorithm In both the shorting-control and dynamic tuning/detuning control...

Ngày tải lên: 21/06/2014, 06:20

... Advances in Solid State Circuits Technologies Conclusions A fuzzy based controller tuning step-size adjuster has been integrated with directional tuning controller to automatically determine the tuning ... in design and eliminates the tedious finetuning process in practical implementation Future research As the fuzzy based directional tuning control algorithm is developed in discrete-time domain, ... Transactions on Industrial Electronics, vol 52, no 5, pp 1308-1314, 2005 238 Advances in Solid State Circuits Technologies L Wang, M Chen, and D Xu, “Increasing inductive power transferring efficiency...

Ngày tải lên: 21/06/2014, 06:20

... switches Since the dissipated power in the switches is insensitive to the transmission line length, reflection should be maximized to minimize the leakage To obtain maximum reflected power and minimum ... transmission line, TL1 as shown in Fig 24 When the digital input is 0V, the NMOSFET switches are turned off Since the parasitic capacitance of each switch in the OFF state is negligible, the input impedance ... modules for 272 Advances in Solid State Circuits Technologies the ON and OFF states, respectively The measured insertion losses of the modulator for the two states are shown in Fig 28(a) When the...

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... cell innodations are divided into three phases Phase I (1K→1M): Shrinkage of planar area of memory cell together with the decrease in capacitor insulator thickness Thinning of the insulator finally ... same increase in processor performance This has been driving enormous development of electronics and information technology 308 Advances in Solid State Circuits Technologies Fig Trends in device ... presentation from Texas Instruments Inc in 1974 introducing a highly efficient silicon solar cell with plural steep trenches, as shown in Fig.4 (a), forecasting the upcoming issue of cell size...

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... the insulating layers are expected Although much progress has been made in fabricating novel gate dielectrics, investigation of these Hf-based high-k gate dielectrics 348 Advances in Solid State ... A few kinds of 3-D stack of active transistors were extensively investigated in 1980’s mainly using laser recrystallization But they were almost abandoned in the next decade due to poor integrity ... these fundamental limits in miniaturization of devices, various kinds of chip stack will be dominant in LSI products in response to the requirement for smaller package used in personal-use, hand-held...

Ngày tải lên: 21/06/2014, 06:20

... than that for the CZ silicon wafers, indicating that germanium doping in silicon inclines hardly to cause warpage during the wafer making from monocrystalline ingots Moreover, the fact of the slightly ... Wang, “InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric,” in Proceedings of IEEE International Conference on Electron Devices and Solid- State Circuits (EDSSC), Hong Kong, China, ... liquid phase oxidized InGaP gate,” in Proceedings of the 7th IEEE International Conference on Solid- State and Integrated Circuits Technology (ICSICT), Beijing, China, Oct 18-21, 2004, pp 2301-2304...

Ngày tải lên: 21/06/2014, 06:20

... are also diminished 402 Advances in Solid State Circuits Technologies a b Fig a) For pre-objective scanning, illumination light is incident on the objective off-axis, resulting in more sensitivity ... co-doping (Ge-B-co-doped) silicon substrates The germanium content in the CZ silicon is calculated aiming to balance the stress induced by boron doping However, in principle, the co-doping of ... optics 398 Advances in Solid State Circuits Technologies E Definition of coordinates The coordinates for the dual axes confocal configuration are shown in Fig The illumination (IO) and collection...

Ngày tải lên: 21/06/2014, 06:20

... luminescence were at 500 and 1120 nm, respectively The luminescent intensity nonlinearly increased with increased Bi2O3 concentration At a 1.0 mol% of Bi2O3 concentration, the luminescent intensity ... and No to Bi5+ Nos and are the intermediate states between numbers and 4, and these states have intermediate coordination states rather than intermediate valence states such as Bi4+ due to the ... 40 Advances in Solid- State Lasers: Development and Applications Next, the aluminum cordination state (ACS) should be close to the Bi ion in BiSG, as seen from the 27Al-NMR results Since the relation...

Ngày tải lên: 21/06/2014, 10:20

... Cavity Ming Lei Department of Electronic Engineering Tsinghua University China Introduction High power or high energy solid- state lasers are required in many applications, but are limited in beam ... pp 863-867 118 Advances in Solid- State Lasers: Development and Applications Koechner, W (1996) Solid- State Laser Engineering Springer Verlag, ISBN 3-540-60237-2, Berlin Kudryashov, I., Katsnelson, ... Advances in Solid- State Lasers: Development and Applications 1908-nm line In the last part of characterisation in a free-running regime, we have measured the beam profiles in far field in the focal...

Ngày tải lên: 21/06/2014, 10:20

... gravitational waves Since this operation will be done in space, the uncertainty of the refractive index of air, the most dominant uncertainty, can be eliminated The combined standard uncertainty for the ... Advanced in Atmospheric Remote Sensing with Lidar, A Ansmann, R 166 Advances in Solid- State Lasers: Development and Applications Neuber, P Rairoux, and U Wandinger eds.(Springer-Verlag, Berlin, 1996), ... D Spinhirne,a nd V S Scott, “Global monitoring of clouds and aerosols using a network of micro-pulse lidar systems”, in Lidar Remote Sensing for Industry and Environmental Monitoring, U N Singh,...

Ngày tải lên: 21/06/2014, 10:20

... Advances in Solid- State Lasers: Development and Applications The amplification stage setup is shown in detail in Fig 11 The seed emerging from the pulse picker is injected into a grazing-incidence single-pass ... emission (ASE), that compete with the amplifying beam in depleting the population inversion in the gain media Since the ASE generated in the one High Gain Solid- State Amplifiers for Picosecond Pulses ... function of the grazing incidence internal angle θ corresponding to a full pump power and maximum seeding injection clipping the beam, hence maximising the small-signal gain in the first unsaturated...

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... considering the input field without space-time coupling, the electric field incident upon the pulse shaping apparatus (immediately prior to the grating) is defined in the slowly varying envelope ... spatial profile on the grating Minimizing the space-time coupling by using spatially large input pulses, discrete Fourier sampling and pulse replica cannot be avoid as the following analysis (suggested ... pulse shaper to the experiment directly In the non linear case, or “indirect pulse shaping”, the shaping introduced is altered by the non linear element Indeed, as the amplification distords the...

Ngày tải lên: 21/06/2014, 10:20

... tube In fact, in the linear gradient shape case, a moderately increasing the length of the tube (corresponding to decreasing the slope of the linear line) or decreasing the peak power of the input ... Advances in Solid- State Lasers: Development and Applications A simpler layout consists in performing the wavelength scanning by rotating the grating around an axis passing through the grating center ... appeared again, shown as the point C in Fig 17 After increasing the temperature from 300 °C to 400 °C at 1.54 mJ, the filament disappeared again, shown as the point D in Fig 17 It indicates that...

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... the grating groove density has been selected, it gives minimum temporal response at grazing incidence Both single- and double-grating monochromators in the off-plane mount can be designed In particular, ... plotted in thin solid line (right axis) For a given value of Ekin, we can view θi and θr as the solutions of the following coupled equations: ( cosθ r − cosθi ) + (θ r − θi ) sin θi = 0, ( sin θ ... trajectory, in particular, is nearly vanishing below the cutoff (≈ 32nd order), which implies little contribution of tunneling to the recombination process In Fig (a) are also plotted in thin dashed lines...

Ngày tải lên: 21/06/2014, 10:20

... electronic states in a sample This is the core of interest in many research topics such as electron-hole dynamics in solids, or excitation transfer in photosynthesis, bond breaking in chemical ... target This results in the change in conditions of the plasma plume, resulting in a rapid decrease in the harmonic intensity with increased shots The different shot-to-shot harmonic intensities for ... references therein) that combine the effects of phase matching and the propagation of the driving laser beam Only by developing a model that incorporates the change in ionisation within the waveguide...

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... the following formulas for the laser 524 Advances in Solid- State Lasers: Development and Applications fields having linear polarization in the x-direction (zeroth-order) and propagating in the +z ... sum is included over the N atoms ionizing in the laser focus incorporated as shown in Eqs 10 and 11 It is important to note that WSC–incoherent in the focal geometry case involves an incoherent ... normal incidence of a laser on its base The spectrum in Fig 13 (b) is for the case of oblique incidence on an ultra-thin target of nm in thickness, μm in width, 20 μm in length, 1016 cm-3 in electron...

Ngày tải lên: 21/06/2014, 10:20

... are as follows MAX: Io = Maximum(Iin1, Iin2, …, IinN)= Iin3= 10 μA MIN: Io = Minimum(Iin1, Iin2, …, IinN)= Iin5= μA MED: Io = Median(Iin1, Iin2, …, IinN)= Iin2= μA WTA: Output voltages Vo1(rank), ... fol_inhibit inhibit state_ clk (Vosn) N-latch own _state local own _state globe feedback _state reset Fig 11 Status block 10 Advances in Solid State Circuits Technologies Vin inhibit_sw fol_inhibit_sw ... function of two input voltages Vin1 and Vin2 is obtained as I1 = I2 = => I out = I − I = β β (VGS − VT )2 (VGS − VT )2 β I SS (Vin − Vin ) − (23) β (Vin − Vin ) I SS 34 Advances in Solid State Circuits...

Ngày tải lên: 27/06/2014, 01:20