Advances in Solid State Part 5 doc

... 0.2389 1 .55 2. 059 2 9.899e-3 0.7320 -0.2670 0. 755 2 0. 259 9 8 2.7869 10 σ − =× 1 .5 2 .58 22 9.111e-3 0 .54 57 -0.4237 0.74 25 0.2880 1 .55 2.2 753 9.933e-3 0 .57 79 -0.4218 0.6666 0.3428 8 3.69 35 10 σ − =× ... (µm 2 ) 155 0 1 05. 6 A eff ×dispersion 155 0 1010 .5 RDS (nm -1 ) 155 0 0.0068 PMD(ps/km 0 .5 ) 155 0 0.04 155 0 0.006 Macro bending loss for 100 turns on the 6...

Ngày tải lên: 21/06/2014, 06:20

... time varying parameters introduce more degrees of freedom in the control design, and in principle more flexibility in shaping the control response. Time variant PIDs can be designed according to ... Equation (4) is that the integral gain Error (Time Variant) Integral Gain k p /T i Fig. 2. The value of the integral gain depends on the error is required to obtain a zero steady -state err...

Ngày tải lên: 19/06/2014, 12:20

... 2 −1 .5 −1 −0 .5 0 0 .5 position tracking error of joint2 time (s) angular position (Rad) 0 1 2 −100 50 0 50 100 joint torque of joint1 time (s) torque (Nm) 0 1 2 −200 − 150 −100 50 0 joint torque of joint2 time ... 2 −200 − 150 −100 50 0 joint torque of joint2 time (s) torque (Nm) 0 1 2 − 150 −100 50 0 50 100 150 200 motor torque of joint1 time (s) torque (Nm) 0 1 2 −400...

Ngày tải lên: 21/06/2014, 06:20

... each programming point of a gate array. Using this technique, a configuration context can be retained indefinitely in the ORGA-VLSI so that the state of the gate array can be maintained statically. ... without adding more cascode devices. V DS1 is calculated by follows: Assuming M 5 is in saturation region in Fig. 2(b). It can be shown that () 2 55 2 1 TGSC VVI −= β =>...

Ngày tải lên: 21/06/2014, 06:20

... obtained from the 7:1 ratio. 10 50 90 130 170 210 250 290 45 65 85 1 05 1 25 1 45 1 65 1 85 7gm 6gm 5gm 4gm 3gm 2gm 1gm 20 40 60 80 100 120 140 160 180 200 220 20 30 40 50 60 70 80 90 100 110 5gm 4gm 3gm 2gm 1gm ... differential output current in the HS integrator for three different digital words: (a) ω(input)=10 MHz, (b) ω(input)= ω t ( 25 MHz for 1g m ). - 65 -60...

Ngày tải lên: 21/06/2014, 06:20

... temperature Advances in Solid State Circuits Technologies 230 according to the user specifications, which include sampling time of the controller and initial state of each processing block. Since ... and equivalent schematic of Darlington SCR Latch up state Advances in Solid State Circuits Technologies 214 0V at most time. So the main NMOS in is off state. A...

Ngày tải lên: 21/06/2014, 06:20

... with Zero) Loop gain(dB) 45 45 45 45 Phase Margin (deg) 83.7 109 57 .5 77.1 Unity-Gain Frequency (UGF) (kHz) 27.1 33.8 24 .5 28.1 Gain Margin (dB) 35. 7 31 18.2 21.9 Gain Margin Frequency (kHz) ... vehicles,” IEEE Journal of Oceanic Engineering, vol. 26, no. 4, pp. 52 2 -52 5, 2001. Advances in Solid State Circuits Technologies 248 I out V in V out V reg...

Ngày tải lên: 21/06/2014, 06:20

... detector (FDD) Vin + Vin - VDD Vout Single-ended envelope detector (SED) M1 Vin Vbias VDD VoutM VbiasP M4M4 VoutP I fbM M5M5 M5 I fbP λ/4 λ/4 Active balun M6 M7 IN+ IN- FB+ FB- OUT+ OUT- IN OUT Load ... Structure of the slow-wave transmission line used in the circuit. Tr+Tf=125ps 200ps 0 -0.2V 0.2V 00 .5 1 0 0 .5 1 00 .51 0 0 .5 1 0 1V 0 1V 0 -0.5V 0.5V V data V g1 V IN V OU...

Ngày tải lên: 21/06/2014, 06:20

... disclosed in the meeting, it is well presumed that the tensile strain may be introduced by thermally Advances in Solid State Circuits Technologies 296 Polar modulation is recently gaining ... (2008). A 5. 8GHz 1 V Linear Power Amplifier Using a Novel On-Chip Transformer Power Combiner in Standard 90 nm CMOS. IEEE Journal of Solid- State Circuits, Vol. 43, no. 5, Ma...

Ngày tải lên: 21/06/2014, 06:20

... Si 3 N 4 7 5. 3 2.4 Al 2 O 3 9 8.8 2.8 Y 2 O 3 15 6 2.3 Ta 2 O 5 22 4.4 0. 35 TiO 2 80 3 .5 0 La 2 O 3 30 6 2.3 a- LaAlO 3 30 5. 6 1.8 SrTiO 3 2000 3.2 0 ZrO 2 25 5.8 1 .5 HfO 2 25 5.8 ... performance of transistor in LSI, continual scaling has been achieved since early 1970’s. Sizes of transistors in products measured 12 μm in 1970 and around 45 nm in...

Ngày tải lên: 21/06/2014, 06:20