Properties and Applications of Silicon Carbide Part 2 pptx

... Physical Review B, Vol. 69, No. 23 , June 20 04, 23 520 2-1 -23 520 213, ISSN 1098-0 121 Properties and Applications of Silicon Carbide3 0 interstitial model (Bracht et al., 20 00). A “dual-sublattice” ... Vol. 69, No. 23 , June 20 04, 23 520 2-1 -23 520 213, ISSN 1098-0 121 One-dimensional Models for Diffusion and Segregation of Boron and for Ion Implantation o...

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... processes of C/SiC in terms of active and passive oxidation of silicon carbide. 2. Aerospace applications for silicon carbide Silicon carbide is defined by the Engineered Materials Handbook ... 1 82 181 A2 105 171 168 A3 85 178 178 A4 1 02 1 72 167 A5 173 1 72 A6 173 188 Table 1. 88 kV surge arresters. Properties and Applications of Silicon Carbi...

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... WBC 20 38.74 25 . 92 32. 41 97.06 41.08 47.50 50.00 WBC 700 22 .06 21 . 62 21.97 65.65 0.05 25 . 02 46.00 WBC 1500 8.86 10.79 9.81 29 .46 0.94 12. 72 37.00 WBC 22 00 4.78 2. 58 3.68 11.03 1 .21 6.04 20 .00 ... GPa 20 26 11. 82 300 22 10.00 400 20 9.09 500 18 8.18 600 16.6 7.55 700 15 6. 82 800 14.35 6. 52 1000 12. 75 5.80 1100 12 5.45 1300 10 4.55 1400 8.83...

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... Defects XX h XX c1 XX c2 Ky3(h) Ky2(c) Ky1(c) PP g   2. 0 024 2. 0 027 2. 0035 2. 0 025 2. 0 028 2. 0036 2. 0047 g  2. 0045 2. 0043 2. 0040 2. 0045 2. 0043 2. 0045 2. 0 028 E C – E i, eV 1.84 1.79 ... (6-6 ' ) 13.71 9. 52 X h -1: 0.0 62 1 x 29 Si ID2-1: 1 x 29 Si E16-1: 1 x 29 Si (3-3 ' ) 1.87 2. 76 X h -2: 0.146 3 x 29 Si ID2 -2...

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... 3H 2 (7) Chlorination of Si 2 H 6 : Si 2 H 6 +6HCl  2SiHCl 3 +5H 2 (8) Silicon carbide production: SiH 3 CH 3 SiC +3H 2 (9) Fig. 9. Chemical process of silicon carbide ... case of C-face. Properties and Applications of Silicon Carbide7 2 Fig. 22 . TEM micrograph of the cross section of the silicon carbide film, shown in F...

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... a.u. Cr 5 -22 2 -19 859 Mn - 82 - 92 316 357 V -23 0 88 0 Fe 107 22 1 -4 12 -854 Table 2. Total energy differences between the ferromagnetic and antiferromagnetic states AFMFM E and mean-field ... (20 08) 023 522 . [22 ] Y. Hijikata, H. Yaguchi, and S. Yoshida: Mater. Sci. Forum 615-617 (20 09) 489. [23 ] Y. Hijikata, T. Yamamoto, H. Yaguchi, and S. Yoshida: Mater. Sci...

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... Dependencies of Cylindrical Dipolar Glass Waveguides on Temperatures, Electronics and Electrical Engineering, Vol. 106, No 10, 83-86, ISSN 13 92- 121 5 Properties and Applications of Silicon Carbide1 22 published ... SiC and High Purity Semi- Insulating 4H SiC through 800 K. Proceedings of 12 th GAAS Symposium, pp. 439-4 42, Amsterdam, the Netherlands, 11-15 Octobe...

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... 1.0 1 .2 2.0 2. 0 2. 5 2. 7 Thermal Conductivity (K) (Wm -1 K -1 ) 150.0 46.0 490.0 450.0 22 5.0 120 0.0 Properties and Applications of Silicon Carbide1 62 Fig. 13. Scanning-TEM of samples ... (v s n ) (10 5 ms -1 ) 1.0 1 .2 2.0 2. 0 2. 5 2. 7 Thermal Conductivity (K) (Wm -1 K -1 ) 150.0 46.0 490.0 450.0 22 5.0 120 0.0 Properties and Applicati...

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... atom)* SiC -26 .7 4Ta+SiC = Ta 2 C+Ta 2 Si - 4.9 Ta 2 Si -10.1 3Ta+SiC = TaC+Ta 2 Si -4.3 Ta 5 Si3 -9.0 5Ta+2SiC = 2Ta 2 C+TaSi 2 -5 .2 TaSi 2 -8.0 3Ta+2SiC = 2TaC+TaSi 2 -4.4 Ta 2 C -46 11Ta+3SiC ... atom)* SiC -26 .7 4Ta+SiC = Ta 2 C+Ta 2 Si - 4.9 Ta 2 Si -10.1 3Ta+SiC = TaC+Ta 2 Si -4.3 Ta 5 Si3 -9.0 5Ta+2SiC = 2Ta 2 C+TaSi 2 -5 .2 TaSi 2 -8.0 3Ta...

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... SiC(s) + 3 /2 O 2 (g)  SiO 2 (l) + CO(g) (11) SiC(s) + O 2 (g)  SiO(g) + CO(g) ( 12) 2SiC(s) + 3Al 2 O 3 (s) + 3O 2 (g)  3Al 2 O 3  2SiO 2 (s) + 2CO(g) (13) SiC(s) + O 2 (g)  SiO 2 (l) + ... (1994) 28 28 -28 32. Properties and Applications of Silicon Carbide2 30 Tsangaris, G.; Kouloumbi, N. & Kyvelidis, S. "Interfacial relaxation phenomena...

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