Properties and Applications of Silicon Carbide Part 1 pdf

... X C -3: 0.543 12 x 13 C +8 x 29 Si ID1-3: 12 x 13 C E15(  )-3: 5 -11 x 13 C + 3 x 29 Si (6-6 ' ) 13 . 71 9.52 X h -1: 0.062 1 x 29 Si ID2 -1: 1 x 29 Si E16 -1: 1 x 29 Si (3-3 ' ) ... X C -3: 0.543 12 x 13 C +8 x 29 Si ID1-3: 12 x 13 C E15(  )-3: 5 -11 x 13 C + 3 x 29 Si (6-6 ' ) 13 . 71 9.52 X h -1: 0.062 1 x 29 Si ID2 -1:...

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... 19 00°C, 15 -min anneal 10 15 10 16 10 17 10 18 10 19 10 20 10 14 C V C I Depth (µm) 0 1 2 3 Concentration (cm -3 ) C B - C C B - Si Properties and Applications of Silicon ... 19 00°C, 15 -min anneal 10 15 10 16 10 17 10 18 10 19 10 20 10 14 C V C I Depth (µm) 0 1 2 3 Concentration (cm -3 ) C B - C C B - Si Pro...

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... Phys., 38, L3 01- 303. Properties and Applications of Silicon Carbide8 0 1 2 3 4 5 6 10 2 3 Growth rate [nm/h] 5 6 1 2 3 4 5 6 10 2 3 4 5 6 10 0 Oxide thickness [nm] 12 00 o C 11 00 o C 10 50 o C ... Chlorination of SiH 3 : SiH 3 +3HCl SiHCl 3 + (5/2)H 2 (6) Properties and Applications of Silicon Carbide6 8 Fig. 17 . Silicon carbide...

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... for Si and C (20): k = k 0  1 − C I Si C 0 Si  1 − C I C C 0 C  . (6) Properties and Applications of Silicon Carbide8 2 1 2 4 6 10 2 4 6 10 0 B/A [nm/h] 0.850.800.750.700.65 10 00/T [K -1 ] 0.75 ... important type of exchange interaction which, for example, is peculiar to Properties and Applications of Silicon Carbide1 10 DMS behaviour. The analys...

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... Dependencies of Cylindrical Dipolar Glass Waveguides on Temperatures, Electronics and Electrical Engineering, Vol. 10 6, No 10 , 83-86, ISSN 13 92 -12 15 Properties and Applications of Silicon Carbide1 22 published ... Modulator. Patent 5 710 . Application of Invention 2 010 -040 is given in Official bulletin of the state patent bureau of the republic of Lithuani...

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... Fig. 12 .(a) TEM micrograph of sample without Ge. Fig. 12 .(b) TEM micrographs of samples with Ge and without Ge. Properties and Applications of Silicon Carbide1 66 (i) Growth of p ++ ... (m 2 V -1 s -1 ) 0.04 0.03 0. 011 0.004 0.085 0.085 Saturated drift velocity of electrons (v s n ) (10 5 ms -1 ) 1. 0 1. 2 2.0 2.0 2.5 2.7 Thermal Condu...

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... on Silicon Carbide by Use of Nickel and Tantalum from a Materials Science Point of View 19 1 0 10 20 30 40 0,0 0,2 0,4 0,6 0,8 1, 0 0 10 20 30 40 0,0 0,2 0,4 0,6 0,8 1, 0 0 10 20 30 40 0,0 0 ,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1, 0 0 ... Schuster, J.C. (19 97). J. Mater. Sci. Lett., 16 , 11 16 -11 17. Gambino, J.P. & Colgan, E.G. (19 98). Silicides and ohmic contacts...

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... Properties and Applications of Silicon Carbide2 14 the first 10 nm of oxide growth (P. Wang, et al., 19 91) . From 11 00 -14 50C, oxidation has also been found to degrade the elastic modulus of ... Compared to earlier Properties and Applications of Ceramic Composites Containing Silicon Carbide Whiskers 215 the first 10 nm of oxide growth (P. Wang, et...

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... 13 4 18 2 18 1 A2 10 5 17 1 16 8 A3 85 17 8 17 8 A4 10 2 17 2 16 7 A5 17 3 17 2 A6 17 3 18 8 Table 1. 88 kV surge arresters. Properties and Applications of Silicon Carbide2 36 important method of cooling ... Applied stress (MPa) Properties and Applications of Silicon Carbide2 38 0.00 0 .10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1. 00 900...

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... current 18 0 Hz rms (mA) BRP-1a 0 .12 2 0. 011 BRP-1b 0.096 0. 012 BRP-1c 0 .11 4 0. 013 BRP-2a 0.089 0.009 BRP-2b 0.092 0.009 BRP-2c 0 .10 2 0.009 SAA-1a 0 .11 0 0. 011 SAA-1b 0.079 0. 010 SAA-1c 0.088 ... of SiC detectors compared to the reactor power instrumentation over the range of the measurements was + 1. 7%. 1E-2 1E0 1E2 1E4 1E6 1E8 1E10 Adjusted SiC Count Rate 1E0...

Ngày tải lên: 20/06/2014, 04:20