Photodiodes World Activities in 2011 Part 9 docx

Photodiodes World Activities in 2011 Part 9 docx

Photodiodes World Activities in 2011 Part 9 docx

... work was funded, in part, by the National Natural Science Fund of China (1 090 40 39, 10525416, 1 099 0101, and 91 021014), Key Project Sponsored by the National Education Ministry of China (108058), ... than 3 × 10 5 V/cm) that a single charge carrier injected in the depletion layer Photodiodes - World Activities in 2011 254 electrical signals corresponding to discre...

Ngày tải lên: 19/06/2014, 21:20

30 239 0
Photodiodes World Activities in 2011 Part 1 pot

Photodiodes World Activities in 2011 Part 1 pot

... World Activities in 2011, Edited by Jeong-Woo Park p. cm. ISBN 97 8 -95 3-307-530-3 PHOTODIODES - WORLD ACTIVITIES IN 2011 Edited by Jeong-Woo Park Photodiodes - World Activities in 2011 ... Photodiodes - World Activities in 2011 18 Photodiode NSi InP (Zn) InGaAs HAM 162.17nm 1203.35nm 1 593 .2nm GPD 1 59. 99nm 1200.54nm 1536.7nm Table 1...

Ngày tải lên: 19/06/2014, 21:20

30 377 0
Photodiodes World Activities in 2011 Part 2 pot

Photodiodes World Activities in 2011 Part 2 pot

... the origin of the bite error, including some technical detail in the single photon detectors. 3. Quantization of electromagnetic field There are mainly two kinds of particles in according to ... 199 1, 199 4, 2002). This allowed us to research in such structures the generation-recombination processes in the space charge regions after reach-through, as well as the influence of ill...

Ngày tải lên: 19/06/2014, 21:20

30 353 0
Photodiodes World Activities in 2011 Part 3 pdf

Photodiodes World Activities in 2011 Part 3 pdf

... 2002)145- 195 Gong Zutong, ( 199 9). Structure theory of photon, PHOTONICS SINICA, 28(1), ( 199 9) 1-10 Greiner W., (2001).Quantum Mechanics, Fouth Ed. Springer-Verlag Berlin Heidelberg, ISBN 7-5062-7263-6/O·530, ... Φ A B Photodiodes - World Activities in 2011 74 5. Accumulation mode for signal integration in imaging The basic operating modes are very useful for real time...

Ngày tải lên: 19/06/2014, 21:20

30 553 0
Photodiodes World Activities in 2011 Part 4 pptx

Photodiodes World Activities in 2011 Part 4 pptx

... phototransistors in a standard CMOS process [fingerprint detection]," in Circuits and Systems, 199 8. ISCAS &apos ;98 . Proceedings of the 199 8 IEEE International Symposium on, 199 8, pp. 641-644 ... sensors for solid state imaging applications," in Electron Devices Meeting, 196 5 International, 196 5, pp. 20- 21. Photodiodes - World Activities in 2011 94 [5...

Ngày tải lên: 19/06/2014, 21:20

30 361 0
Photodiodes World Activities in 2011 Part 5 ppt

Photodiodes World Activities in 2011 Part 5 ppt

... Photodiodes - World Activities in 2011 136 Fig. 19. Noise in time-domain for constant reference voltage (V ref =1.5V) 7. Conclusions Multisampling time-domain ... Photodiodes - World Activities in 2011 122 can be performed outside pixel lowering at maximum the number of transistors integrated per pixel. In this chapter the multisa...

Ngày tải lên: 19/06/2014, 21:20

30 400 0
Photodiodes World Activities in 2011 Part 6 ppt

Photodiodes World Activities in 2011 Part 6 ppt

... electrons in InP, the opposite holds true for InAlAs and InGaAs, as electrons ionise more readily than holes; thus making the InGaAs/InAlAs combination superior to InGaAs/InP in a SAM APD, in terms ... equation P=Z, giving Photodiodes - World Activities in 2011 152 discussed single stage transimpedance amplifier to get more Gain*Bandwidth from the amplifier. In th...

Ngày tải lên: 19/06/2014, 21:20

30 516 0
Photodiodes World Activities in 2011 Part 7 pptx

Photodiodes World Activities in 2011 Part 7 pptx

... requires further improvement in linearity, gain, and sensitivity (quantum efficiency and single photon counting capability) of PMTs. Photodiodes - World Activities in 2011 196 Fig. 18. Reverse ... noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 , 7 89- 790 . Photodiod...

Ngày tải lên: 19/06/2014, 21:20

30 339 0
Photodiodes World Activities in 2011 Part 8 doc

Photodiodes World Activities in 2011 Part 8 doc

... introduce some practical techniques of near-infrared single-photon detection, containing four sections as following: i) InGaAs/InP APD SPD; ii) Photon- number-resolving detector based on a InGaAs/InP ... impinging photons. Fig. 48. Measurement of the transmission efficiency on the entrance surface of the pyramidal concentrator for 5° impinging photons. Photodiodes - World Activi...

Ngày tải lên: 19/06/2014, 21:20

30 303 0
Photodiodes World Activities in 2011 Part 10 ppt

Photodiodes World Activities in 2011 Part 10 ppt

... point source in the multiplication region to the randomly generated points in the silicon base plane area of the 27 µm mesa APD as shown in Fig. 27. Photodiodes - World Activities in 2011 ... R-plane sapphire, resulting in lower defect densities in the silicon near the sapphire interface. (Lau et al., 197 9) In 199 1, Imthurn developed a method of directly bonding...

Ngày tải lên: 19/06/2014, 21:20

30 280 0
w