Ferroelectrics Material Aspects Part 9 doc

... Infrared Technology and Applications, Vol. 3 698 , pp. 110- 118, ISBN 97 808 194 31721, Orlando, FL, USA, April 5 -9, 199 9 Ferroelectrics – Material Aspects 300 be correlated with the improvement ... applications, Materials Letters, 60, 193 7 – 194 2. Haertling, G. H. ( 199 9) Ferroelectric ceramics: history and technology, Journal of the American Ceramic Society, 82, (4), 79...

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... Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 (Khan et al., 199 9), Pb(Mg 1/3 Nb 2/3 )O 3 –PbZrO 3 –PbTiO 3 (Zhang et al., 2007), Ba(Ti,Zr)O 3 (Rehrig et al., 199 9) and BaTiO 3 (Yamamoto & Sakuma, 199 4). The piezoelectric ... (Mascot, 20 09) . Ferroelectrics – Material Aspects 66 6.1 Schottky barrier The Schottky mechanism is the major conduction mechanism at room temperature for f...

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... 0 .90 7.52 392 PbO 1250 27.23 19. 13 11.765 0.80 7.48 388 Sol-gel 1150 34 .99 13.18 8.77 0.77 7.83 393 53/47 Pb 3 O 4 1250 53.62 34.02 11.301 0 .99 7.47 396 PbO 1250 55.34 31.35 18.045 0 .94 ... 55.34 31.35 18.045 0 .94 7.54 394 Sol-gel 1150 41.18 34.65 9. 89 .87 7.87 396 51/ 49 Pb 3 O 4 1200 33 29. 73 10.874 0. 89 7.88 400 PbO 1200 42.11 23.45 10.181 0.82 7.7 397 Sol-gel 1150...

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... 335 ( 199 4), pp. 59- 64 McIntyre, P.C.;Maggiore, C.J. & Nastasi, M ( 199 5). Orientation selection in thin platinum films on (001) MgO. Journal of Applied Physics, Vol. 77, No. 12 (June 199 5), ... Journal of American Ceramic Society, Vol. 79, No. 9 ( 199 6), pp. 2283-2288 Schwyn Thöny, S.: Youde, K.E., Harris, J.S., Hesselink, Jr. & L. ( 199 4). Growth of epitaxial strontium...

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... al., 199 9; H. H. Kim et al., 199 8), FRAM (Ramash et al., 2001; W. S. Kim et al., 199 9), sensors and actuators for microelectromechanical systems (MEMS)(B. M. Xu, 199 9; Polla and Francis, 199 8), ... is widely used in electro-optic modulators (Haretling, 199 9; Dimos, 199 5), and optical displays (Uchino, 199 5; Moulson and Herbert, 199 7). With the rapid development of optical tele...

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... Vol.85, No.1, (January 199 9), pp. 287- 295 , ISSN 0021- 897 9 Hwang, K. S., Manabe, T., Nagahama, T., Yamaguchi, I., Kumagai, T., and Mizuta, S. ( 199 9). Effect of Substrate Material on the Crystallinity ... E. ( 199 9) Sensing Characteristics of In-plane Polarized Lead Zirconate Titanate Thin Films. Appl. Phys. Lett., Vol. 75, No.26, (December 199 9), pp. 4180-4182, ISSN 0003- 695 1...

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... (April 199 9), pp. 5100-5105, ISSN 0021- 897 9 Funke, K. ( 199 3). JUMP RELAXATION IN SOLID ELECTROLYTES. Progress in Solid State Chemistry, Vol.22, No.2, (May 199 3), pp. 111- 195 , ISSN 00 79- 6786 ... 0021- 897 9 Dias, A. & Moreira, R. L. ( 199 9). Chemical, mechanical and dielectric properties after sintering of hydrothermal nickel-zinc ferrites. Materials Letters, Vol. 39, No.1,...

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... structural materials to functional materials and ultimately to thin Ferroelectrics – Material Aspects 154 film electronic materials. Since the late 199 0’s extensive interest in frequency agile materials ... Klee, M. and Macken, U. ( 199 6). Integrated Ferroelectric, 12, 11 Park, Y B., Lee, J K., Jung, H J., Park, J W.,( 199 9), Bismuth composition control of SrBi 2 TaNbO 9 thi...

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... (Crawford & Žumer, 199 6; Drzaic, 199 8). These are currently the most commonly used in switchable windows in modern buildings. However, Ferroelectrics – Material Aspects 192 Z.H. Zhou, J.M ... interaction forces between particles. Commonly used doping nanoparticles include ferromagnetic nanoparticles, metallic nanoparticles, inorganic nanoparticles, and ferroelectric nano...

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... Ferroelectrics – Material Aspects 230 (Qf= 590 00GHz) (Cho et al. 199 7). For Nd(Mg 0.5 Ti 0.5 )O 3 , the corresponding value is 26, - 49 ppmK -1 and 3 690 0GHz, respectively (Cho et al. 199 9). ... At% OK 21.15 56 .99 60.61 MgK 00.53 0 .95 1.01 SrL 18.65 9. 18 7.27 BaL 28.76 9. 03 10 .91 TiK 24. 19 21.77 19. 19 LaL 06.71 2.08 2.02 Table 5. The chemical composition of...

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