Optoelectronics Materials and Techniques Part 10 pptx

Optoelectronics Materials and Techniques Part 10 pptx

Optoelectronics Materials and Techniques Part 10 pptx

... 0 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y (b) t / τ R = 100 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y (c) t / τ R = 500 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y (d) t / τ R = 100 0 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y (e) ... chains. 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z X Y M(50)/C 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z...
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Optoelectronics Materials and Techniques Part 1 pptx

Optoelectronics Materials and Techniques Part 1 pptx

... Distribution Function of crystalline silicon (left) and amorphous silicon (right) [From: Laaziri et al., 1999] Optoelectronics - Materials and Techniques 10 3. The role of hydrogen in a-Si:H As ... various optoelectronic and photonic materials and techniques and would like to thank to the authors for their wonderful efforts. Stake holders of the ongoing optoelec...
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Optoelectronics Materials and Techniques Part 2 pptx

Optoelectronics Materials and Techniques Part 2 pptx

... refractive Optoelectronics - Materials and Techniques 36 and by using the current density in the ECD method. For the purpose of obtaining high- concentration Er-doped SRO materials (more ... 87, 105 503 Zukotynski, S., Gaspari, F., Kherani, N., Kosteski, T., Law, K., Shmayda, W.T., Tan, C.M. (2002) J. Non-Cryst. Solids Vols. 299-302, 476. Optoelectronics - Materials...
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Optoelectronics Materials and Techniques Part 7 pptx

Optoelectronics Materials and Techniques Part 7 pptx

... (2006)]. -2 -1 0 1 2 0.0 4.0x10 19 8.0x10 19 1.2x10 20 (a) 1 MHz 1/C 2 (F -2 m 4 ) Voltage (V) 300 400 500 600 700 0.0 5.0x10 -5 1.0x10 -4 1.5x10 -4 2.0x10 -4 2.5x10 -4 (b) Photoresponse (A/W) Wavelength ... titanium dioxide film thickness. 0.0 0.2 0.4 0.6 -8.0x10 -3 -6.0x10 -3 -4.0x10 -3 -2.0x10 -3 0.0 2.0x10 -3 4.0x10 -3 6.0x10 -3 8.0x10 -3 V (volt) (b) (c) (a) (a) TiO 2 (3 μm)/...
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Optoelectronics Materials and Techniques Part 3 docx

Optoelectronics Materials and Techniques Part 3 docx

... material. 0.0 0.5 1.0 1.5 2.0 10 28 10 29 n Si-Si n Si-O Nr. of bonds / m 3 x (from SiO x ) (a) 0.0 0.5 1.0 1.5 2.0 4.0x10 10 6.0x10 10 8.0x10 10 1.0x10 11 1.2x10 11 Energy (bonds' energy) ... states and luminescence in porous silicon quantum-dots: the role of oxygen. Phys. Rev. Lett. 82,197-200 Optoelectronics - Materials and Techniques 72 spin density is...
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Optoelectronics Materials and Techniques Part 4 docx

Optoelectronics Materials and Techniques Part 4 docx

... 900 100 0 102 0 103 0 104 0 105 0 106 0 107 0 108 0 109 0 (a) IR peak position (cm -1 ) T anneal ( 0 C) x=0.70 x=0.92 x=1.13 x=1.3 10 12 10 13 10 14 10 15 10 16 940 960 980 100 0 102 0 104 0 106 0 (b) ... more about this, see Hinds et al., 1998; and Arnoldbik et al., 2005, respectively. Optoelectronics - Materials and Techniques 86 10 0 10 1...
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Optoelectronics Materials and Techniques Part 5 pot

Optoelectronics Materials and Techniques Part 5 pot

... -treated GaN surface and Optoelectronics - Materials and Techniques 124 continuous layer (Chen et al., 1999). Epitaxial lateral overgrowth and its derivatives pendeo- epitaxy and facet-controlled ... Sub- ångstrom Resolution. Advanced Materials, Vol. 20, No. 11, pp. 2162-2165. Optoelectronics - Materials and Techniques 110 4. Defects in GaN films and fo...
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Optoelectronics Materials and Techniques Part 6 ppt

Optoelectronics Materials and Techniques Part 6 ppt

... work, the substrates are silicon (100 ) and Optoelectronics - Materials and Techniques 168 200 400 600 800 100 0 1200 1400 1600 1800 0 200 400 600 800 100 0 1200 1400 I Se Zn Si Counts/msr/keV Energy ... mode, where the direction of the 142 Optoelectronics - Materials and Techniques Cuprous Oxide (Cu 2 O): A Unique System Hosting Various Excitonic Matter and Exhi...
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Optoelectronics Materials and Techniques Part 8 pot

Optoelectronics Materials and Techniques Part 8 pot

... in the Fig. 10B, suggesting Tp-LPSQ is free of low energy defects (e.g., caused by crystallization) and has great thermal and color stability. Optoelectronics - Materials and Techniques ... 2-tert-butyl-9 ,10- bis[4-(iminostilbenyl)phenyl]anthracene (Danel et al., 2002) and 0.44 of 9-phenyl -10- (4-triphenylamine)anthracene. (Hamai & Hirayama, 1983) Optoelectronic...
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Optoelectronics Materials and Techniques Part 9 potx

Optoelectronics Materials and Techniques Part 9 potx

... carbazoles, and their M n values were calculated to be 2500 and 2300 (Table 2), respectively. Scheme 3. Synthesis of monomer 3 and polymers P4 and P5. Optoelectronics - Materials and Techniques ... yields with M n values of 6100 and 6250, respectively. Optoelectronics - Materials and Techniques 248 The photoluminescence spectra of P14 and P15 (1.0 ×...
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