Optoelectronics Materials and Techniques Part 3 docx

Optoelectronics Materials and Techniques Part 3 docx

Optoelectronics Materials and Techniques Part 3 docx

... on the statically and time-resolved photoluminescence spectra of porous silicon, J. Phys. IV France 132 , 32 1 -32 4 Optoelectronics - Materials and Techniques 56 theories) and experimentally ... states and luminescence in porous silicon quantum-dots: the role of oxygen. Phys. Rev. Lett. 82,197-200 Optoelectronics - Materials and Techniques 72 spin density...
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Optoelectronics Materials and Techniques Part 4 docx

Optoelectronics Materials and Techniques Part 4 docx

... - Materials and Techniques 98 van Hapert, J.J. (2002). Hopping conduction and chemical structure - a study on silicon suboxides, PhD Thesis, Utrecht University ISBN 90 -39 3 -30 63- 8, ch 3 and ... Nature 37 8, pp. 258-260 Lucovsky, G. & Pollard, W.B. (19 83) . Local bonding of oxygen and hydrogen in a-Si:H:O thin films, J. Vac. Sci. Technol. A 1, pp. 31 3 - 31 7...
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Optoelectronics Materials and Techniques Part 13 docx

Optoelectronics Materials and Techniques Part 13 docx

... which x and y are varied as described in Table 36 2 Optoelectronics - Materials and Techniques Optoelectronics - Materials and Techniques 35 4 Singh, J. (1992). Physics of Semiconductors and ... 564. 739 /2010 -3/ NanoSemiCon, 30 3.880/2008-2/PQ, 470.998/2010-5/Univ, 472 .31 2/2009-0/Univ 30 4 936 /2009-0/ PQ, 30 3578/ 2007-6/ PQ, 577.219/2008-1/JP), CAPES, FACEPE...
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Expert Systems for Human Materials and Automation Part 3 docx

Expert Systems for Human Materials and Automation Part 3 docx

... symbolic names K_x and Pl-y for the Command and Plug-ins of WIQA and QA-P_z for QA-program written by means of WIQA. It is necessary to notice that all names of the types K_x, Pl-y and QA-P_z are ... definite operator»; • Command: “question” →” the command of QA-processor” and “answer” → “execute the command”; • Function: “question” → ”definition of function” and “answer” → “...
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Optoelectronics Materials and Techniques Part 1 pptx

Optoelectronics Materials and Techniques Part 1 pptx

... Fig. 3. Radial Distribution Function of crystalline silicon (left) and amorphous silicon (right) [From: Laaziri et al., 1999] Optoelectronics - Materials and Techniques 10 3. The role ... broken is not a weak one. The authors Optoelectronics - Materials and Techniques 6 (a) (b) Fig. 2. A 3- d computer model representation of c-Si (a), and a-Si (b) w...
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Optoelectronics Materials and Techniques Part 2 pptx

Optoelectronics Materials and Techniques Part 2 pptx

... No.2 12 J 1 = 50 mA.cm -2 3. 625 J 2 = 15 mA.cm -2 6 .34 9 J 3 = 0 8.0 Series No .3 12 J 1 = 50 mA.cm -2 2.6 53 J 2 = 15 mA.cm -2 5.159 J 3 = 0 9.5 Table 3. Electrochemical etching ... x 3 x 2 x 4 x m x m+1 x m-1 x 2N-4 x 2N -3 x 2N-2 x 2N x 2N-1 Fig. 11. Diagram of multi-layer interference filters. Optoelectronics - Materials and...
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Optoelectronics Materials and Techniques Part 5 pot

Optoelectronics Materials and Techniques Part 5 pot

... London, U.K. Optoelectronics - Materials and Techniques 132 Liu,L., & Edgar, J.H. (2002). Substrates for gallium nitride epitaxy. Materials Science and Engineering, Vol. 37 , pp. 61–127. ... mode to 3D island formation on the Si x N y -treated GaN surface and Optoelectronics - Materials and Techniques 124 continuous layer (Chen et al., 1999). Epitaxia...
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Optoelectronics Materials and Techniques Part 6 ppt

Optoelectronics Materials and Techniques Part 6 ppt

... simply assuming phase matching (J 3 = d)andusingI 0 (Z) in Eq. (11). While this 156 Optoelectronics - Materials and Techniques 6 Will-be-set-by-IN-TECH Fig. 3. Time-integrated PL spectrum at ... two-photon absorption is negligible, the THG field intensity E 3 as a function of Z is given by [Boyd (2008)] E 3 (Z)= i3ω 2nc χ (3) E 3 (Z)J 3 (Δkd), (15) where n is the index of...
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Optoelectronics Materials and Techniques Part 7 pptx

Optoelectronics Materials and Techniques Part 7 pptx

... 2.5 -26 -24 -22 -20 -18 -16 -14 -12 Ln(I) (A) V (volt) 30 5 K 31 5 K 32 5 K 33 5 K 34 5 K T s =5 53 K Current (A) V (volt) 30 5 K 31 5 K 32 5 K 33 5 K 34 5 K Fig. 4. Forward and reverse current versus voltage characteristics ... 0.6 -8.0x10 -3 -6.0x10 -3 -4.0x10 -3 -2.0x10 -3 0.0 2.0x10 -3 4.0x10 -3 6.0x10 -3 8.0x10 -3 V (volt) (b) (c) (a) (a) TiO 2 (...
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Optoelectronics Materials and Techniques Part 8 pot

Optoelectronics Materials and Techniques Part 8 pot

... Synthesis and NLO properties. Dyes and Pigments, Vol.84, No.1, (January 2010), pp. 134 - 139 , ISSN 18 73- 37 43 Liou, G.S., Hsiao, S.H., Huang, N.K., & Yang, Y.L. (2006). Macromolecules, Vol .39 , No.16, ... O R R RRR R R R R R n K 2 CO 3 , ethanol C 3 H 5 Br Toluene, Cp 2 PtCl 2 THF, H + /H 2 O TMDS Me 4 NOH, CHCl 2 CHCl 2 HSiCl 3 HSi(OCH 3 ) 3 HSi(OCH 3 ) 2 OSi(O...
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