new technology of metal oxide thin film preparation for chemical sensor application

... Sensors and Actuators B 109 (2005) 128–134 New technology of metal oxide thin film preparation for chemical sensor application Viacheslav Khatko a,∗ , Josep ... “extra” interfaces couldbe formed duringthe process ofinterruption. The prolongation of film growth on the “extra” interface in- volves anewnucleation ofthe metaloxidefilm, theformation and growth of a film islan...

Ngày tải lên: 20/03/2014, 13:05

... laboratories for characterisation of materials, and for optic thin films in particular. The theory for ellipsometric analysis is based on the change in the polarization state of light when ... index of the film. From the ellipsometry spectra of the samples one can find out the optic constants and optical properties of the films. This work presents new investigation...

Ngày tải lên: 28/03/2014, 13:20

... 1 for singly ionised forms α = 2 for doubly ionised form. β = 1 for atomic forms β = 2 for molecular form The chemisorption of oxygen is a process that has two parts: an electronic one and a chemical ... E. Wagner, Sensors and Actuators B, 26/27, 59 (1995). 5. S.R. Morrison, The Chemical Physics of Surfaces, 2nd edn. (Plenum Press, New York, 1990). Conduction Model of Met...

Ngày tải lên: 19/03/2014, 16:47

... Zhihua Ying State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ... of human being and its habitation envi- ronment, and a large volume of research has been focused on the development and fabrication of gas sensors for detection of gas...

Ngày tải lên: 20/03/2014, 13:04

... performance. Therefore, further reduction of the reflectance will be expected from the optimization of the synthesis conditions of SiNWs. For analysis of the electrical properties, the I–V curve of the fabricated ... difference of the reflectance might be the effect of synthesis conditions, such as thickness of metal film and SiH 4 gas flow. The reduction of reflectance is ve...

Ngày tải lên: 16/03/2014, 15:12

... development of thick film materials for tin dioxide based gas sensors enabled the fabrication of sensitive and relatively selective gas sensors. However, long-term stability of the sensors remains ... analysis software for powder diffraction data. V 3.1, Bruker AXS GmbH, Karlsruhe, Germany. [4] A.A. Vasiliev, Physical and chemical principles of the design of gas sensors based o...

Ngày tải lên: 19/03/2014, 16:47

... reserved. Keywords: Sensor; Thin film; TiO ; Platinum; NH ; SMSI; Metal- organics; TiO sol 23 2 1. Introduction A great deal of efforts has been put into developing new sensing materials with improved sensor ... al.rSensors and Actuators B 67 2000 270–274272 Table 2 Ž. Relative resistance of the thin film fired in different atmosphere measured at 2008C Number Firing atmospher...

Ngày tải lên: 19/03/2014, 16:48

... received in revised form 12 March 2009 Abstract. Tungsten oxide film was deposited on ITO-coated glass by using RF magnetron sputtering method from WO 3 ceramic target. Thin film preparation – process ... and because of the heteroepitaxial growth of films WO 3 in which the parameters of plane ITO (440) are slightly larger than the ones of WO 3 planes. The relation bet...

Ngày tải lên: 13/02/2014, 03:20

Ngày tải lên: 21/02/2014, 16:20

... Jang à Department of Information and Communications and Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea 1 Department of Materials ... online April 20, 2010 Thin- film transistors (TFTs) were fabricated on a glass substrate with a metal organic chemical vapor deposition (MOCVD)-grown undoped zinc oxide (ZnO)...

Ngày tải lên: 05/03/2014, 21:20