growth of nanowires
growth of nanowires
... this way, the growth of the nanowires at the tip is guaranteed. 3.4. Self-assembly growth from solution The formation of nanowires from solution methods is complicated. The growth of nanowires generally ... to anisotropic growth of ZnO crystals. (b) Unidirectional growth of ZnO single crystals due to screw dislocation. (c) Growth induced by twining. (d) Self-cataly...
Ngày tải lên: 19/03/2014, 16:48
Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
... formation of a titanium oxide (TiO x ) phase by removal of oxygen from the silica layer [9]. The re- duction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs. The growth of silica ... suppresses the decomposition of TiN, as a result, it limits the growth of a-SiONWs nanowires by the mechanism. Oxygen seems Fig. 4. (a) A TEM photograph of a cross...
Ngày tải lên: 16/03/2014, 15:04
Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
... consists of nanoparticles of a few Fig. 2. Schematic depiction of SiNW growth by the SLS mecha- Ž. Ž . nism: a deposition of a thin layer of Ni on the Si 111 substrate; Ž. Ž. b formation of the ... in the growth of SiNWs. Because this growth process involves solid–liquid–solid phases, it is called SLS growth which is, in fact, an analogous to the VLS mechanism. The grow...
Ngày tải lên: 16/03/2014, 15:05
Growth of amorphous silicon nanowires
... large amounts of nanowires are formed, which are of a uniform length up to 2 micrometers. The growth rate of the nanowires is estimated to be ca. 15 nm/min. The diameter of the nanowires is about ... silicon nanowires are of an amorphous state and some of nanowires appear to bifurcate in the vertically growth process. The eect of H 2 gas etchings on the catalytic...
Ngày tải lên: 16/03/2014, 15:05
Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
... catalyst for the growth of silicon nanowires (SiNWs). Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50–70 nm and a length of several micrometers. ... nanowires have excellent single-crys- tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed fo...
Ngày tải lên: 16/03/2014, 15:06
Ultrafast growth of single crystalline si nanowires
... catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) ... produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalli...
Ngày tải lên: 16/03/2014, 15:13
Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism
... in the growth of SiNWs. Because this growth process involves solid–liquid–solid phases, it is named as a SLS growth, which is in fact an analogy of the VLS mechanism. The growth process of the ... a large area (10 mm × 10 mm) of 111 Si substrate. The nanowires grew directly on the substrate. It is visible that the deposit consists of pure SiNWs. The growth rate of the...
Ngày tải lên: 16/03/2014, 15:14
Growth of silicon nanowires on UV structurable glass using self organized nucleation centres
... growth (VLS -growth) of such large nanowires, the LMS crystals exhibit a size which seems to correspond to the diameter of the nanowires. Since the eutectic tempera- ture of the Ag–Si system of ... energy such that the growth of silicon nanowires is favoured. However, the init ialization of the nanowire growth requires additional investigations. The chemical composition...
Ngày tải lên: 16/03/2014, 15:17
Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
... which is essential for most of the applications. In this work, the investigation of Au and In as solvents for the growth of silicon nanowires on Si(1 1 1) via PVD by means of the well-known vapor–liquid–solid ... indium at a growth temperature of 570 1C. He did not get any nanowires after flooding the chamber with diluted silane and explained the absence of nanowires by c...
Ngày tải lên: 16/03/2014, 15:17
Diffusion controlled growth of semiconductor nanowires vapor pressure versus high vacuum deposition
... forma- tion mechanisms of nanowires is important from the view- point of fundamental physics of growth processes as well as for fabrication of controllably structures nanowires for various device ... mononuclear to poly- nuclear mode of nucleation at the wire top as the radius of wire increases. Some of the authors of this paper developed a more detailed model of wire...
Ngày tải lên: 16/03/2014, 15:32