Structural investigation of silicon nanowires using GIXD and GISAXS evidence of complex saw tooth faceting

Structural investigation of silicon nanowires using GIXD and GISAXS evidence of complex saw tooth faceting

Structural investigation of silicon nanowires using GIXD and GISAXS evidence of complex saw tooth faceting

... Structural investigation of silicon nanowires using GIXD and GISAXS: Evidence of complex saw- tooth faceting Thomas David * , Denis Buttard, Tobias ... experiments reveal fine saw- tooth faceting of the sides of the nanowires. This fine saw- tooth faceting appears with alternating upward and down- ward orientations on each side of the nanowires, r...

Ngày tải lên: 16/03/2014, 15:37

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Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application

Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application

... Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application Minsung Jeon ⁎ , Koichi Kamisako Department of Electronic and Information Engineering, ... silicon nanowires were synthesized for solar cells application. Voluminous silicon nanowires were fabricated on single crystalline silicon wafer. Optical reflectance and solar cell...

Ngày tải lên: 16/03/2014, 15:12

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Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

... the investigation of Au and In as solvents for the growth of silicon nanowires on Si(1 1 1) via PVD by means of the well-known vapor–liquid–solid (VLS) me- chanism will be presented. Silicon nanowires ... tension of gold and indium and the surface energy of silicon and silicon oxide. The diffusion coefficients at temperatures around 550 1C for indium and gold...

Ngày tải lên: 16/03/2014, 15:17

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Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

... rate of crystal silicon, outer layer of silicon oxide will surround the crystal sil- icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalesced together and ... The peculiar feature of the branch suggests that there may exist a competitive growth between crystal silicon core and outer layer of silicon oxide. When the forming...

Ngày tải lên: 16/03/2014, 15:09

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Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

... silica or silicon nitride instead of pure silicon nanowires. However, the nanowires and the photostructurable glass were expected to contain mainly silicon and oxygen. Therefore, a direct measure- ment ... amounts of silicon and oxygen. Additional peaks for Ga, N and Au occurred due to the substrate and growth process. A carbon peak could be associated with a contamin...

Ngày tải lên: 16/03/2014, 15:17

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Investigation of capacitive humidity sensing behavior of silicon nanowires

Investigation of capacitive humidity sensing behavior of silicon nanowires

... Investigation of capacitive humidity sensing behavior of silicon nanowires Huilin Li, Jian Zhang à , BaiRui Tao, LiJuan Wan, WenLi Gong Department of Electronic Engineering, ... that the silicon nanowires have been prepared on the substrate. They are aligned perpendicularly to the bulk silicon substrate and their average length is about 80 m m. And the length of SiNWs...

Ngày tải lên: 16/03/2014, 15:18

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Molecular dynamics simulations of the tensile and melting behaviours of silicon nanowires

Molecular dynamics simulations of the tensile and melting behaviours of silicon nanowires

... simulations of the tensile and melting behaviours of silicon nanowires Yuhang Jing à , Qingyuan Meng, Wei Zhao Department of Astronautical Science and Mechanics, Harbin Institute of Technology, ... interatomic potential consists of two- and three-body interaction terms and were originally fitted to describe the crystalline and liquid silicon phases. This potential con...

Ngày tải lên: 16/03/2014, 15:18

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Tài liệu Báo cáo khóa học: Quantitative analysis, using MALDI-TOF mass spectrometry, of the N-terminal hydrolysis and cyclization reactions of the activation 2 process of onconase pdf

Tài liệu Báo cáo khóa học: Quantitative analysis, using MALDI-TOF mass spectrometry, of the N-terminal hydrolysis and cyclization reactions of the activation 2 process of onconase pdf

... reducing it once purified. By using the purified recombinant protein, the conversion of reagents and products of the exopeptidase- catalyzed hydrolysis of Met1 and cyclization of Gln1 to pyroglutamyl ... solvent of the matrix, and 0.5 lL of the mixture was immediately applied to a sample probe spot. Cyclization reaction as a function of pH and temperature In order to det...

Ngày tải lên: 19/02/2014, 12:20

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Carbon assisted synthesis of silicon nanowires

Carbon assisted synthesis of silicon nanowires

... the area of inorganic nanowires and nanotubes in the last few years [1–3]. Thus, nanowires of a variety of inorganic materials including oxides, nitrides and chalcogenides have been synthes ized and characterized. ... to the (1 1 1) planes of silicon. The crystallinity of the nanowires is con- siderably higher when only argon was used instead of a mixture of argon...

Ngày tải lên: 16/03/2014, 15:04

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Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... Vertically-aligned Si nanowires using Pt. Si nanowires using Pt are longer than those using Au. (c) HRTEM image of Si nanowire using Au. (d) HRTEM image of Si nanowire using Pt. Both were single ... catalyst (Fig. 1e and f). Note that a Si-rich globule was formed when using Fig. 1. Synthesis of Si nanowires using Au and Pt as catalysts. (a) Vertically-aligned Si...

Ngày tải lên: 16/03/2014, 15:05

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