Diffusion controlled growth of semiconductor nanowires vapor pressure versus high vacuum deposition
Diffusion controlled growth of semiconductor nanowires vapor pressure versus high vacuum deposition
... Diffusion -controlled growth of semiconductor nanowires:
Vapor pressure versus high vacuum deposition
V.G. Dubrovskii
a,b,
*
, N.V. Sibirev
c
, R.A. ... briefness, as vapor phase deposition (VPD)
and high vacuum deposition (HVD). Studying the forma-
tion mechanisms of nanowires is important from the view-
point of fundamental physics of growth processes...
Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism
... consists of pure SiNWs. The growth
rate of the nanowires is estimated to be about 30 nm=s.
EDS analysis (inset) proved that the nanowires are
composed of Si, but there exists a small amount of
oxygen ... in
the growth of SiNWs. Because this growth process
involves solid–liquid–solid phases, it is named as a
SLS growth, which is in fact an analogy of the VLS
mechanism. T...
Growth of silicon nanowires on UV structurable glass using self organized nucleation centres
... growth (VLS -growth) of such large nanowires, the
LMS crystals exhibit a size which seems to correspond to
the diameter of the nanowires. Since the eutectic tempera-
ture of the Ag–Si system of ... energy such that the growth of silicon
nanowires is favoured. However, the init ialization of the
nanowire growth requires additional investigations. The
chemical composition...
Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
... investigation of Au and In as solvents
for the growth of silicon nanowires on Si(1 1 1) via PVD by
means of the well-known vapor liquid–solid (VLS) me-
chanism will be presented. Silicon nanowires ... means of PVD
were found.
In our case, the growth of nanowires from indium seems
to be rather insensitive to change of parameters like sub-
strate temperature, rate of me...
Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders
... ablation.
11-15
In
thermal evaporation, oxides were found to play a dominant role
in the nucleation and growth of Si nanowires. The growth
mechanism of Si nanowires from thermal evaporation of SiO
powders, ... large
quantity of high- purity (no metal contamination), ultralong (in
millimeters), and uniform-sized (a few nanometers to tens of
nanometers in diameter) Si nanowir...
Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
... the growth of silicon nanowires (SiNWs).
Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50–70 nm and a length of
several micrometers. High- resolution ... nanowires have excellent single-crys-
tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was propos...
Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
... critical factor in the growth
kinetics of a-SiONWs. The growth of silica nanowires
was limited by introducing ammonia (NH
3
) into the
system to suppress the decomposition of TiN films. The
Ni islands ... suppresses the
decomposition of TiN, as a result, it limits the growth of
a-SiONWs nanowires by the mechanism. Oxygen seems
Fig. 4. (a) A TEM photograph of a cross secti...
Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism
... in
Fig. 3, the growth rate is saturated at a high SiCl
4
flow rate of
20 sccm; i.e., in the present growth conditions, the growth rate is
not proportional to the partial pressure of reactant gas. ... (µm/min)
SiCl
4
/H
2
(sccm)
Fig. 3. Growth rate versus SiCl
4
flow rate at 1000 °C.
Fig. 4. Construction of log-scaled growth rate and reciprocals of growth. Temper-
ature...
Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
... consists of nanoparticles of a few
Fig. 2. Schematic depiction of SiNW growth by the SLS mecha-
Ž. Ž .
nism: a deposition of a thin layer of Ni on the Si 111 substrate;
Ž. Ž.
b formation of the ... a Si concentration high enough in the vapor
phase. In these two cases, growth of the SiNWs is
controlled by the well-known vapor liquid–solid
Ž.
VLS mechanism, in which t...
Growth of amorphous silicon nanowires
... between
growth and tail ends of the nanowires. In this
Letter, we use chemical vapor deposition of silane
to prepare silicon nanowires. Our research group
had previously reported the growth amorphous
silicon ... large amounts of nanowires are
formed, which are of a uniform length up to
2 micrometers. The growth rate of the nanowires is
estimated to be ca. 15 nm/min....
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