Photonic Properties of Er-Doped Crystalline Silicon
Photonic Properties of Er-Doped Crystalline Silicon
... and optical properties of Si/Si:Er multinanolayer structures, which emerge as the most promising form of c-Si:Er material. Vinh et al.: Photonic Properties of Er-Doped Crystalline Silicon Vol. ... energy-level splitting of the J ¼ 15=2andJ ¼ 13=2 manifolds by a crystal field of C 2v symmetry. Vinh et al.: Photonic Properties of Er-Doped Crystalline Silicon 12...
Ngày tải lên: 16/03/2014, 15:28
Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope
... 999–1002 the silicon top-layer, even for ultra-thin silicon layers (thickness as low as 5–20 nm), and allows to obtain a very sharp interface silicon layer=buried oxide. The electrical conductance of silicon ... great amount of interest has been devoted to proximal probe-assisted lithography techniques [2]. This pioneer process was based on a local oxidation of silicon induced...
Ngày tải lên: 16/03/2014, 15:15
Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures
... that the band-gap of the codoped Si-nc is reduced with respect to the gap of the pure ones showing the possibility of an impurity-based engineering of the optical properties of Si-nc. Here, we ... position 2 of Fig. 11), approaching asymptotically the value of the band-gap of the undoped Si-nw. This is another indication of how doping can modify the electronic and optical...
Ngày tải lên: 16/03/2014, 15:15
Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide
... agglomerated clusters consisting of high density of nanowires. The magnified view of a single cluster is depicted in the inset of Fig. 2(d). These observations suggest that growth of nanowires in the present ... 2009 PACS: 61.46.–w 81.07.–b Keywords: Silicon monoxide Silicon oxide nanowires Thermal evaporation Photoluminescence abstract A single step non-catalytic process based o...
Ngày tải lên: 16/03/2014, 15:18
Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays
... the surface of the silicon wafer at the initial stage. Self- assembly of silver nanoclusters to the dendrite structure and lack of coalescence to a compact grain film continue to cause etching of the silicon ... in units of 2p=a, the crystalline grain size L is in units of a, with a being the lattice constant of silicon and o(q) represents the phonon dispersion curve. G 0...
Ngày tải lên: 16/03/2014, 15:19
Raman spectrum of array ordered crystalline silicon nanowires
... an dominant role in the area of microelectronics materials. Silicon- based photo- electric integration is one of the highlights of todays science research. Crystal silicon is an indirect band material, ... to Raman spectrum, we neglect the influence of silicon oxide sheath of SiNWs. It can be seen that the spectrum of the sample is very similar to that of the c-Si, except fo...
Ngày tải lên: 16/03/2014, 15:19
Tripathy, optical properties of nano silicon
... decreasing the thickness of the a-Si : H layer. This results in termination of dangling bonds of the sur- face Si atoms of nanocrystalline silicon. Nanocrystalline silicon thus fabricated is ... spectra of (a) nano- crystalline Si prepared by pulsed plasma process ing and (b) porous silicon prepared by anodic etching using 488 nm line of Ar + laser. Optical properties...
Ngày tải lên: 16/03/2014, 15:31
Will silicon be the photonic material of the third millenium
... version) Contents 1. Why silicon photonics? 1170 2. Silicon photonics 1172 2.1. Silicon based waveguides 1172 2.2. Detectors 1173 2.3. Other photonics components 1174 2.4. Silicon photonic integrated ... based on silicon [10]. The aim of this review is to try to give the state -of- the-art on the development of silicon photonics with the aim of settling the status and tryi...
Ngày tải lên: 16/03/2014, 15:32
First principles optical properties of silicon and germanium nanowires
... models. 4. Optical properties of SiNWs and GeNWs In Section 5 of the present paper, we aim to point out the importance of the many-body effects on the optica l re- sponse of some of the studied nanowires. ... axis of the wire. Further the possibility to modify their optical response as a function of their size has become one of the most challenging aspect of recent semicond...
Ngày tải lên: 16/03/2014, 15:33
molecular dynamics studies of ultrafast laser induced phase and structural change in crystalline silicon
... occupied by one silicon lattice and each silicon lat- tice cubic contains 8 silicon atoms), is used for the study of ultra- fast laser heating. For the purpose of allowing the motions of atoms at ... layer is determined to be of the order of several tens of nanometers at fluences up to two timesabove the melting threshold [24]. Residual stress and amorphization of the sili...
Ngày tải lên: 06/05/2014, 08:54