Ultrafast growth of single crystalline si nanowires

... demonstrate a simple method of growing SiNWs. Si nanopowder was used in our work instead of the dangerous gas of silane as the Si source. The synthesis of SiNWs was carried out using a mixture of Si nanoparticles ... diameter of them easily. The growth of single- crystalline SiNWs and morphology were discussed. © 2006 Elsevier B.V. All rights reserved. Keywords: SiNWs...

Ngày tải lên: 16/03/2014, 15:13

... visible that the deposit consists of pure SiNWs. The growth rate of the nanowires is estimated to be about 30 nm=s. EDS analysis (inset) proved that the nanowires are composed of Si, but there exists ... al. / Physica E 9 (2001) 305–309 Fig. 3. Schematic depiction of the SiNW growth via the SLS mechanism: (a) deposition of a thin layer of Ni on the Si (111) substrate; (...

Ngày tải lên: 16/03/2014, 15:14

... Physica E 13 (2002) 999 – 1002 www.elsevier.com/locate/physe Electronic transport properties of single- crystal silicon nanowires fabricated using an atomic force microscope N. ... resistivity is ob- served. The average resistivity of all heavily doped (10 19 cm −3 ) nanowires is found to be 83 m cm, a value higher by a factor of 14 than expected from the design data of ... uppe...

Ngày tải lên: 16/03/2014, 15:15

... Electrochromics of single crystalline WO 3 Æ H 2 O nanorods Xiaolan Wei 1 , Pei Kang Shen * State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, ... insets of Fig. 1a and b indicate that both of the two nanocrystals are single crys- tals. On the top of rod-type WO 3 Æ H 2 O nanocrystals, the lattice spacing of d = 5.36 A ˚ i...

Ngày tải lên: 19/03/2014, 16:48

... fabricating single- crystalline b-FeOOH hollow nanorods with length in the range of 70–110 nm and width in the range of 20–30 nm. In particular, a process mechanism has been revealed for synthesis of single- crystalline b-FeOOH ... with length of 50$70 nm and width above 10 nm. The Fast Fourier Transform (FFT) image in the inset indicates the single crystalline nature of t...

Ngày tải lên: 20/03/2014, 13:08

... nanorods Microwave-assisted hydrothermal synthesis Single crystalline Gas sensing property Single crystalline ZnO nanorods were synthesized via microwave assisted hydrothermal method using zinc hydroxide ... Extensive studies have been put on improving the sensing performance of 1D ZnO based gas sensors. Consequently, synthesis of 1D ZnO nanostructure with different morphologies a...

Ngày tải lên: 06/05/2014, 13:24

... nanowires have excellent single- crys- tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for the growth of silicon nanowires ... synthesized by chemical vapor deposition of SiH 4 gas at 450 °C. Fe particles which were located at the tip of the CNTs were employed as a catalyst for the growth of s...

Ngày tải lên: 16/03/2014, 15:06

... other works on the growth of silicon nanowires from indium by means of PVD were found. In our case, the growth of nanowires from indium seems to be rather insensitive to change of parameters like ... chamber in spite of the preceding HF-dip. There are hints in the literature [11] that deposition of gold onto a thin layer of SiO 2 on Si( 1 1 1) favors the decomposition...

Ngày tải lên: 16/03/2014, 15:17

... coaxial doping of the NW external shell. 3.3. The influence of a slowly diffusing impurity at the catalyst surface on the NW growth processes In the pro cess of the deco mposition of silico n-containing molecules ... diffusing atoms reaches the value of Y slow E0.4; (3) essential suppression of the surface transport at great input fluxes for a single- component system; (4) the pr...

Ngày tải lên: 16/03/2014, 15:18

... The diraction rings of crystalline cubic Si and b-SiC could be identi®ed. High resolution TEM images revealed that Si NW with carbon coating consisted of a single crystalline Si core and a sheath of carbon ... length. The structure of the nanowires was con®rmed to consist of a crystalline Si core and a silica outerlayer by using selected- area electron diraction...

Ngày tải lên: 16/03/2014, 15:04