Rational growth of highly oriented amorphous silicon nanowire films
... Rational growth of highly oriented amorphous silicon nanowire films Xihong Chen 1 , Yingjie Xing 1 , Jun Xu, Jie Xiang, Dapeng Yu * Department of Physics, School of Physics, State ... point of Fig. 2. SEM images showing the high orientation of the nanowire films. (a) Edge of the film showing a wide-spread orientation of the nanowires. (b) Details of the highly...
Ngày tải lên: 16/03/2014, 15:07
... July 2000; accepted 24 July 2000 Abstract Highly oriented amorphous silicon nanowires (a-SiNWs ) were grown on Si (1 1 1). The length and diameter of oriented SiNWs are almost uniform, which are ... Physica E 9 (2001) 305–309 www.elsevier.nl/locate/physe Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism D.P. Yu a; ∗ , Y.J....
Ngày tải lên: 16/03/2014, 15:14
... Eects of ambient pressure on silicon nanowire growth X.H. Fan, L. Xu, C.P. Li, Y.F. Zheng, C.S. Lee, S.T. Lee * Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics ... University of Hong Kong, Hong Kong, People's Republic of China Received 25 September 2000; in ®nal form 9 November 2000 Abstract Growth of silicon nanowires (SiNWs) by th...
Ngày tải lên: 16/03/2014, 15:05
Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
... on a large area 10= 10 mm of 111 Si substrate after a 1 h period of growth. EDS analysis Ž. inset proved that the nanowires consist mainly of silicon. A trace amount of oxygen exists in the a-SiNWs, ... consists of nanoparticles of a few Fig. 2. Schematic depiction of SiNW growth by the SLS mecha- Ž. Ž . nism: a deposition of a thin layer of Ni on the Si 111 substrate; Ž...
Ngày tải lên: 16/03/2014, 15:05
Growth of amorphous silicon nanowires
... grown silicon nanowires are of an amorphous state and some of nanowires appear to bifurcate in the vertically growth process. The eect of H 2 gas etchings on the catalytic size and the eect of ... of the nanowires is 30 nm. The alignment of the nanowires is improved. Compared with our previously work [17], we got amorphous aligned silicon nanowires instead of the ran...
Ngày tải lên: 16/03/2014, 15:05
growth of monoclinic wo3 nanowire array for highly
... under a pressure of 13–15 Torr with an air flow of 200 sccm at a temperature of 1000 C. Fig. 1 shows typical FESEM images of an as-synthesized nanowire array grown on Si substrate. Nanowires are ... the nanowire array growth. The nanowire array was employed directly for gas sensor fabrication using photolithography. The gas sensing experiments revealed that the nanowire arra...
Ngày tải lên: 19/03/2014, 16:48
Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
... formation of a titanium oxide (TiO x ) phase by removal of oxygen from the silica layer [9]. The re- duction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs. The growth of silica ... fine structure EELS of the silicon 2p edge from the inner phase reveals the formation of amorphous silica nanowire (Fig. 2c); Carbon 1s edge band form the outside sh...
Ngày tải lên: 16/03/2014, 15:04
Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
... catalyst for the growth of silicon nanowires (SiNWs). Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50–70 nm and a length of several micrometers. ... nanowires have excellent single-crys- tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for th...
Ngày tải lên: 16/03/2014, 15:06
Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles
... Yang a, * a State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China b Graduate School of the Chinese Academy of Sciences, Beijing, ... and the high dispersion of Au nanoparticles on the surface of the SiNWs without any aggregation. The formation of the SiNWs was explained on the basis of the reactio...
Ngày tải lên: 16/03/2014, 15:06
Fabrication of a porous polyimide membrane using a silicon nanowire array as a template
... describe the preparation of a porous polyimide membrane using a vertically oriented silicon nanowire (SiNW) array as a template. Since the diameters and densities of silicon nanowires can be controlled, polyimide ... using silicon nanowire arrays as templates; (a) synthesis of silicon nanowires, (b) polyimide coating, (c) polyimide etching with O 2 plasma, and (d) silicon...
Ngày tải lên: 16/03/2014, 15:10