Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles
Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles
... Polymer- assisted synthesis of aligned amorphous silicon nanowires and their core/ shell structures with Au nanoparticles Xing-bin Yan a,b , Tao Xu a , ... analytic results of the morphology and microstructure confirmed the orientation and the amorphous nature of the SiNWs, and the high dispersion of Au nanoparticles on the surface of the SiNWs...
Ngày tải lên: 16/03/2014, 15:06
Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism
... 2000 Abstract Highly oriented amorphous silicon nanowires (a-SiNWs ) were grown on Si (1 1 1). The length and diameter of oriented SiNWs are almost uniform, which are 1 m and 25 nm, respectively. ... that growth of the a-SiNWs was controlled by a solid–liquid–solid mechanism (SLS). This synthesis method is simple and controllable. It may be useful in large-scale synthesis...
Ngày tải lên: 16/03/2014, 15:14
Phonon assisted tunneling process in amorphous silicon nanostructures and gaas nanowires
... the value of 12 meV. An advantage of this model over that of Irrera et al. used model is the possibility of describing the behavior of I–V data measured at both high and low temperatures with the ... amor- phous silicon nanostructures and GaAs nanowires recently published in Refs. [1,9]. 2. Theory and a comparison with experimental data If the current is dominated by t...
Ngày tải lên: 16/03/2014, 15:18
facile synthesis of porous a - fe2o3 nanorods and their application in ethanol sensors
... ethanol vapor with concentrations of 50, 100, 200, 500, and 1000 ppm. The sensing properties of R-Fe 2 O 3 nanoparticles with an average particle size of about 30 nm and a surface area of 18.31 m 2 /g, ... the size of Figure 3. (a, b) TEM and HRTEM images of R-FeOOH nanorods. (c, d) TEM and HRTEM images of porous R-Fe 2 O 3 nanorods. (e) The corresponding ED patter...
Ngày tải lên: 19/03/2014, 16:48
Carbon assisted synthesis of silicon nanowires
... Carbon -assisted synthesis of silicon nanowires Gautam Gundiah, F.L. Deepak, A. Govindaraj, C.N.R. Rao * Chemistry and Physics of Materials Unit and CSIR Centre of Excellence in Chemistry, Jawaharlal ... 2003 Abstract Carbon -assisted synthesis of silicon nanowires has been accomplished with silicon powders as well as solid sub- strates. The method involves heati...
Ngày tải lên: 16/03/2014, 15:04
Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
... 2000 Abstract Ž. Amorphous silicon nanowires a-SiNW with an average diameter of ca. 20 nm were synthesized at about 9508C under an Ž. ArrH atmosphere on a large area of a 111 Si substrate without supplying ... made nanowires were exposed to air, because the growth process was controlled under a reduction atmosphere with a mixture of argon and hydrogen. The nanowires grew...
Ngày tải lên: 16/03/2014, 15:05
Growth of amorphous silicon nanowires
... deposited with AuPd alloy as catalyst for 1 min. (a) Low-mag- ni®cation images of silicon nanowires. (b) and (c) A magni®ed view of (a). (d) Top view of the vertically aligned silicon nanowires. Z.Q. ... characterize the structures of silicon nanowires. 3. Results and discussio n Fig. 1a±d shows the SEM images of the silicon nanowires grown on a substrate, w...
Ngày tải lên: 16/03/2014, 15:05
Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method
... quantities of SiNWs with various crystal phases were synthesized and their characteristics were estimated. Tin-capped SiNWs were straightly grown and their structures were changed with increasing ... optoelectronic and electrochemical devices with low-dimensional structures. In recent years, silicon nanowires (SiNWs) as one-dimensional structure have attracted due to...
Ngày tải lên: 16/03/2014, 15:10
Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation
... properties at room temper- ature, because of its indirect band gap of $1.1 eV and a small exciton binding energy ($15 eV). In contrast, silicon nanowires (SiNWs) of a few na- nometers in diameter ... [10±13] and ther- mal evaporation [14±17] are two methods nor- mally used for the synthesis of SiNWs. The key point in these two methods is the formation of a sucient amount...
Ngày tải lên: 16/03/2014, 15:06
Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope
... 999–1002 the silicon top-layer, even for ultra-thin silicon layers (thickness as low as 5–20 nm), and allows to obtain a very sharp interface silicon layer=buried oxide. The electrical conductance of silicon ... characterization of silicon nanowires made from ultrathin silicon- on-insulator (SOI) using a lithog- raphy process based on an atomic force microscope (AFM). SOI w...
Ngày tải lên: 16/03/2014, 15:15