Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
... Iron- catalytic growth of prism- shaped single- crystal silicon nanowires by chemical vapor deposition of silane Chen Li a,b,1 , Chi Gu a,b,1 , Zengtao ... 2005 Abstract Single- crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH 4 gas at 450 °C. Fe particles which were located at the tip of...
Ngày tải lên: 16/03/2014, 15:06
... Deposition of carbon nanotubes on Si nanowires by chemical vapor deposition Y.F. Zhang, Y.H. Tang, Y. Zhang, C.S. Lee, I. Bello, S.T. Lee * Center of Super-Diamond & ... SiC can be formed by carbon atoms diusing into the Si NWs, CNTs could not be formed very well on the surface of nanowires because of both the volume change of the nanowires and breaking of t...
Ngày tải lên: 16/03/2014, 15:04
... average resistivity of all heavily doped (10 19 cm −3 ) nanowires is found to be 83 m cm, a value higher by a factor of 14 than expected from the design data of 6 m cm (a factor of 7 for the largest wires). ... n-doped by arsenic implantation. The Si top layer is then locally patterned using local oxidation induced under the biased tip of the AFM. The active part of the de...
Ngày tải lên: 16/03/2014, 15:15
Báo cáo " Growth of CdS thin films by chemical bath deposition technique " pptx
... VNU Journal of Science, Mathematics - Physics 24 (2008) 119-123 119 Growth of CdS thin films by chemical bath deposition technique Be Xuan Hop*, Ha Van Trinh, ... [4], molecular beam epitaxy [5], spray pyrolysis [6], chemical bath deposition [7]. Chemical bath deposition is a method of growing thin films of certain materials on a substrate immersed in an ... can be...
Ngày tải lên: 14/03/2014, 13:20
Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
... formation of a titanium oxide (TiO x ) phase by removal of oxygen from the silica layer [9]. The re- duction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs. The growth of silica ... suppresses the decomposition of TiN, as a result, it limits the growth of a-SiONWs nanowires by the mechanism. Oxygen seems Fig. 4. (a) A TEM photograph of a cr...
Ngày tải lên: 16/03/2014, 15:04
Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism
... HRTEM image of Si nanowire using Au. (d) HRTEM image of Si nanowire using Pt. Both were single crystal. (e) EDS line mapping of Si nanowires using Au catalyst. (f) EDS line mapping of Si nanowires ... Au, without loss of components by chemical reaction or evaporation. Thus, it has been demonstrated that Pt is a stable catalyst for the VLS mechanism. The growth rate of...
Ngày tải lên: 16/03/2014, 15:05
Liquid-Delivery Metal-Organic Chemical Vapour Deposition of Perovskites and Perovskite-Like Compounds pdf
... the oriented growth of a crystalline material on a single crystal surface. Epitaxial growth is classified in: a) homoepitaxy - when film and substrate 1. Fundamentals 13 consist of the same ... description of the growth modes the effect of mismatch will be taken into account. These main growth modes are a) the layer -by- layer (Frank-van der Merwe) growth, e.g., in...
Ngày tải lên: 14/03/2014, 19:20
Báo cáo khoa học: Bridging the gap between in silico and cell-based analysis of the nuclear factor-jB signaling pathway by in vitro studies of IKK2 ppt
... concentrations of GST-IjBa at several fixed concentrations of ATP and vice versa (order of binding experiments). Lineweaver–Burk double recipro- cal plots were generated by linear least squares fits of the data. ... ratio of apparent dissociation con- stants for binding GST-IjBa in the presence and absence of ATP, and the value of a indicates whether the binding of one substra...
Ngày tải lên: 16/03/2014, 11:20
A new mechanism for modulation of schottky barrier heights on silicon nanowires
... were created. By oxidation of the wires in dry atmosphere at 800 1C for 90 min, the wires were embedded in a SiO 2 shell of about 10 nm, with a silicon core of 15–20 nm width. Following evaporation ... started from an SOI wafer with a silicon film thickness of 55 nm and a buried oxide layer (BOX) of 145 nm. After thinning the silicon film to 30 nm and performing patterning by...
Ngày tải lên: 16/03/2014, 15:14
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... (2007) 153–157 Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition D.W. Kwak, H.Y. Cho, W C. Yang à Department of Physics and Quantum-Functional ... evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substrates synthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposit...
Ngày tải lên: 16/03/2014, 15:15