Amorphous silica nanowires grown by the vapor–solid mechanism
Amorphous silica nanowires grown by the vapor–solid mechanism
... to form the silica nanowires by the VS mech- anism. Increasing the process time up to 120 min does not change the diameter and the length of the silica nanowires significantly, indicating the Fig. ... 2a, shows the nanowires grown from the seed parti- cles. The diameter of the nanowires ranges be- tween 15 and 35 nm. Process time did not affect the length...
Ngày tải lên: 16/03/2014, 15:03
Tailoring of amorphous siox nanowires grown by rapid thermal annealing
... micrograph of the nanowire grown after RTA at 900 °C. The seed particles, for the most part, are attached to the top of the grown nanowires. However, a few of them are embedded in the wire during growth ... Recently, the characteristics of the VLS mechanism has been revisited by Cheyssac et al. [2].In addition, Persson et al. also proposed the vapor–solid solid (V...
Ngày tải lên: 16/03/2014, 15:09
Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
... by the EELS in the nanowires. The carbon on the shell is supplied by thermal decom- position of CH 4 by nickel. No carbon shells were ob- served from the silica nanowires grown in the Ar:H 2 gas mixture ... though they are not observed using the FESEM. The growth behavior of the nanowires and the EDS spectra of the layers in Fig. 4 show several facts which...
Ngày tải lên: 16/03/2014, 15:04
Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transport
... respectively. By fitting the curves by two Gaussian functions, two peak energies E red (red ARTICLE IN PRESS Fig. 2. (a) TEM image (the inset shows the SAED pattern) of the as- grown amorphous SiO x nanowires ... process of amorphous silica nanowires is catalyst-assisted. EDX was applied to examine the chemical composition of the as -grown nanowires. Fig. 3(a) show...
Ngày tải lên: 16/03/2014, 15:19
Nitrogen doped ZnOfilm grown by the plasma-assisted metal-organic chemical vapor deposition pot
... at 1608C followed by deionized water rinse. The reaction temperature was 6008C and the power of the plasma source was 900 W. The growth rate was 1 mm/h. The non-doped sample (sample A) was grown with ... PL spectrum was measured by a 325 nm He–Cd laser. The PL signal from the sample was filtered by a monochromator and picked up by a CCD detector. The power arriving at...
Ngày tải lên: 05/03/2014, 21:20
Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide
... generated during the nanowires growth. 3.4. Growth mechanism The growth mechanism in 1-D nanostructures has been explained by the screw dislocation model and the VLS model in the past. The former is ... only diffusive rings reveal the amorphous nature of the nanowires. No lattice fringes could be resolved in the HRTEM across the diameter of the nanowires (Fi...
Ngày tải lên: 16/03/2014, 15:18
Preparation and photoluminescence properties of amorphous silica nanowires
... oxidized Si nanowires [16]. The growth process of the nanowires can be explained by the vapor±liquid±solid (VLS) mech- anism, since little droplets can be seen at the tops of the nanowires [17]. The ... on the surface of the pellets and the ther- malcouple. TEM images of the products were taken with a JEM-200CX transmission electron micro- scope. The composition...
Ngày tải lên: 16/03/2014, 15:07
Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method
... were synthesized and their characteristics were estimated. Tin-capped SiNWs were straightly grown and their structures were changed with increasing hydrogen gas flow rates. Their diameters on the ... with hydrogen radicals generated by microwave in the quartz discharge tube. In order to investigate the effect of synthesis conditions, SiNWs are synthesized using the hydrogen radical...
Ngày tải lên: 16/03/2014, 15:10
Synthesis and photoluminescence property of silicon carbon nanowires synthesized by the thermal evaporation method
... SiC, the emission peak for b -SiC nanowires is obviously shifted to the blue. The emergence of the peak with a blueshift is due to the existence of oxygen defects in the amorphous layer, the special ... temperature to adjust the pore diameter and remove the barrier layer at the bottom of nanoholes. 2.2. Synthesis of SiC nanowires The preparation apparatus for synth...
Ngày tải lên: 16/03/2014, 15:21
![Structures and electronic properties of si nanowires grown along the [1 1 0] direction role of surface reconstruction](https://media.store123doc.com/images/document/14/rc/td/medium_tdu1394959072.jpg)
Structures and electronic properties of si nanowires grown along the [1 1 0] direction role of surface reconstruction
... confinement effect: the confinement decreases the energy of HO states and in- creases the energy of the LU states, but the magnitude of the en- ergy shift depends on their effective masses. Due to the large effective ... structure calculation and for the geometry optimization. In the optimized geometries the remaining forces acting on the atoms are less than 5.0 Â 10 À2 Ry...
Ngày tải lên: 16/03/2014, 15:37