tiết 77 78 ông mạnh thắng thần gió
Theoretical investigation on thermal properties of silicon based nanostructures
... Conductivity of Si1−x Gex Nanowires 75 3.1 76 3.2 Si/Ge Randomly Doped Nanowires 77 3.3 Si/Ge Superlattice Nanowires 82 3.4 Motivation ... and B Li, “Remarkable Reduction of Thermal Conductivity in Silicon Nanotubes”, Nano Lett 10, 3 978 (2010) [4] J Chen, G Zhang, and B Li, “How to improve the accuracy of equilibrium molecular dynamics ... Stillinger and Weber in Ref [76] as the following ϵ = 50 kcal/mol, σ = 0.20951 nm, A = 7.049556 277, (2.8) B = 0.6022245584, p = 4, q = 0, a = 1.80, λ = 21.0, γ = 1.20 The parameter set of SW potential...
Ngày tải lên: 10/09/2015, 08:38
Spontaneous growth and luminescence of si siox core shell nanowires
... C Wu et al / Chemical Physics Letters 378 (2003) 368–373 nanowires prepared by this method generally display twinnings, high order grain ... The composition of the sample was further determined 370 C Wu et al / Chemical Physics Letters 378 (2003) 368–373 Fig Silicon (2p) and oxygen (1s) electron spectra for the Si/ SiOx nanowires Fig ... typical TEM image of a Si nanoparticle chain is presented in C Wu et al / Chemical Physics Letters 378 (2003) 368–373 371 Fig (a) TEM morphology of the Si nanoparticle chains and Sample A showing...
Ngày tải lên: 16/03/2014, 15:08
Báo cáo hóa học: " Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers" docx
... hydrogenated amorphous silicon using bending detected optical lever method Appl Phys Lett 1998, 77: 2 978 29 Nickel NH, Jackson WB: Hydrogen-mediated creation and annihilation of strain in amorphous ... concentration in a-Si already tends to slow down significantly between and 1.5 ml/min flow rate (0 .78 and 1.46% partial of total pressure), reaching a maximum value of 17 at.% In a-Ge, the same slowing ... Light-induced defects in hydrogenated amorphous silicon germanium alloys Sol Energy Mater Sol Cells 2003, 78: 399 Sameshima T, Watanabe H, Kanno H, Sadoh T, Miyao M: Pulsed laser crystallization of silicon-germanium...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo hóa học: " Preface to Symposium E: Nanoscaled Si, Ge based Materials" potx
Ngày tải lên: 21/06/2014, 06:20
Báo cáo hóa học: " In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron " potx
Ngày tải lên: 21/06/2014, 08:20
The composition dependent mechanical properties of ge si core–shell nanowires
... 20.46 22.76 25.07 27.41 29 .77 31.04 31.08 31.14 31.20 31.27 31.36 31.47 31.60 31.76 31.95 148 244 364 508 676 868 1084 1324 1588 1876 0.0586 0.0967 0.1442 0.2013 0.2 678 0.3439 0.4295 0.5246 0.6292 ... 31.75 31.64 31.48 31.32 148 244 364 508 676 868 1084 1324 1588 1876 0.0586 0.0967 0.1442 0.2013 0.2 678 0.3439 0.4295 0.5246 0.6292 0.7433 The number of atoms of core–shell nanowires are fixed to be ... R.L Zhou and H.Y He for valuable comments References [1] L Zhang, R Tu, H Dai, Nano Lett (2006) 2785 [2] J.-E Yang, C.-B Jin, C.-J Kim, M.-H Jo, Nano Lett (2006) 2679 [3] X Duan, Y Huang, Y Cui,...
Ngày tải lên: 16/03/2014, 15:22
Báo cáo hóa học: " Kinetics of Si and Ge nanowires growth through electron beam evaporation" ppt
... Harmand JC, Glas F: Growth kinetics and crystal structure of semiconductor nanowires Phys Rev B 2008, 78: 235301 20 Werner P, Zakharov ND, Gerth G, Shubert L, Gosele U: On the formation of Si nanowires ... of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals Solid State Commun 1 977, 21:1019 26 Olson GL, Roth J: Kinetics of solid phase crystallization in amorphous silicon Mater...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" potx
Ngày tải lên: 14/03/2014, 13:20
Deposition of carbon nanotubes on si nanowires by chemical vapor deposition
Ngày tải lên: 16/03/2014, 15:04
High frequency FTIR absorption of sio2 si nanowires
... 300 Q Hu et al / Chemical Physics Letters 378 (2003) 299–304 (or SiO) amorphous layer The nanostructural effect on the IR absorption properties ... K are also shown in Fig Compared with that of sample A, Q Hu et al / Chemical Physics Letters 378 (2003) 299–304 Fig The FE-SEM images of samples A, B, and C the absorption bands of samples B ... the strong absorption intensity at higher frequency 302 Q Hu et al / Chemical Physics Letters 378 (2003) 299–304 Fig The IR absorption spectra around 400–2000 cmÀ1 for the samples A, B, and C...
Ngày tải lên: 16/03/2014, 15:05
Si nanowires grown from silicon oxide
... w15x G Hass, C.D Salzberg, J Opt Soc Am 44 Ž1954 181 w16x G Nolsson, G Nelin, Phys Rev B Ž1972 3777 ...
Ngày tải lên: 16/03/2014, 15:08
Si nanowires synthesized by laser ablation of mixed sic and sio2 powders
... Campbell, P.M Fauchet, Solid State Commun 58 Ž1984 739 w20x G Nolsson, G Nelin, Phys Rev B Ž1972 3777 ... spot size of 10 mm in diameter and a power of mW The Raman result is shown in Fig 4b The peak at 780 cmy1 is the characteristic peak of b-SiC w18x The other peak at 950 cmy1 is second-order peak...
Ngày tải lên: 16/03/2014, 15:08
Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles
Ngày tải lên: 16/03/2014, 15:08
Si nanowires synthesized with cu catalyst
... 178 Y Yao, S Fan / Materials Letters 61 (2007) 177 181 Fig Cu–Si phase diagram [17] were characterized with EF-SEM (Sirion ... The Si diffuses in the solid–solution alloy and will Y Yao, S Fan / Materials Letters 61 (2007) 177 181 179 Fig The SEM images of a) the Cu nanoparticles on the surface of Si wafer (scale bar is ... thank Mr Liguo Xu for his helpful assistant work 180 Y Yao, S Fan / Materials Letters 61 (2007) 177 181 Fig a) The low magnification TEM image of the Si nanowires b) The TEM image of a straight...
Ngày tải lên: 16/03/2014, 15:12
Characteristics of siox nanowires synthesized via the thermal heating of cu coated si substrates
... Lett (2003) 577 [17] X.C Wu, W.H Song, K.Y Wang, T Hu, B Zhao, Y.P Sun, J.J Du, Chem Phys Lett 336 (2001) 53 [18] C.H Liang, L.D Zhang, G.W Meng, Y.W Wang, Z.Q Chu, J Non-cryst Solids 277 (2000) ... P.M Ajayan, D Golberg, Y Bando, Adv Mater 13 (2001) 197 [23] R Ma, Y Bando, Chem Phys Lett 377 (2003) 177 [24] S.H Sun, G.W Meng, M.G Zhang, Y.T Tian, T Xie, L.D Zhang, Solid State Commun 128 (2003)...
Ngày tải lên: 16/03/2014, 15:14
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... diameter was increased to 15 nm and the fraction of the islands smaller than 20 nm was decreased to 77% (Fig 1(b)) These results indicate that for thicker films the initially nucleated Au–Si alloy ... Givargizov, J Cryst Growth 31 (1975) 20 [5] Y Cui, L.J Lauhon, M.S Gudiksen, J Wang, Appl Phys Lett 78 (2001) 2214 [6] J Westwater, D.P Gosain, S Tomiya, S Usui, H Ruda, J Vac Sci Technol B 15 (1997)...
Ngày tải lên: 16/03/2014, 15:15
Formation of silicon oxide nanowires directly from au si and pd–au si substrates
Ngày tải lên: 16/03/2014, 15:16
Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
Ngày tải lên: 16/03/2014, 15:17
Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of si nanowires
... E.I Givargizov, Growth of Filament-Like and Platelet Crystals from Vapor, Nauka Press, Moscow, 1 977 (in Russian); D.N McIlroy, D Zhang, Y Kranov, M Grant Morton, Appl Phys Lett 79 (2001) 1540 2453...
Ngày tải lên: 16/03/2014, 15:18