... = 4, q = 0, a = 1.80, λ = 21. 0, γ = 1.20 The parameter set of SW potential for Ge was later developed by Ding et al in Ref [80] as the following ϵ = 1.93 eV, σ = 0 .218 1 nm, A = 7.049556277, (2.9) ... dependence of thermal conductivity in Ge/Si coreshell NWs with different cross section areas at 300 K 121 5.10 Temperature dependence of thermal conductivity reduction in Ge/Si core-shell NWs ... elemental semiconductors (Si, Ge) [7, 11], III-V semiconductors (GaN, GaAs, GaP, InP, InAs) [17 21] , II-VI semiconductors (ZnS, ZnSe, CdS, CdSe) [22–24] Interested readers can refer to the experimental...
... di-hydride bond, Si-H2, at about 214 0 cm-1 could also exist hidden in the tail of the Si-H peak at high wave numbers The shift with respect to the standard value of 210 0 cm-1 can be due to the presence ... possible existence of Si-H2 bonds could be suggested by spectrum B2 also showing a peak around 214 0 cm-1 Figure shows that, upon annealing, the SiH and Ge-H bonds break with consequent release ... according to which the binding energy of the Ge-H bond is smaller than that of the SiH bond [4 ,21- 24] In particular, Tsu et al [24] found that it is 69 kcal/mole for Ge-H and 76 kal/mole for...
... that the {113} surfaces have been found to be one of the major low-energy surfaces of silicon [21, 22], meaning that the sidewall facettation leads to a lowering of the total surface energy of ... Reinhardt and W Kern (eds.) Handbook of Silicon Wafer Cleaning Technology, (William Andrew Inc., 2007) 21 A.A Baski, S.C Erwin, L.J Whitman, Surf Sci 392, 69 (1997) 22 Z Gai, R.G Zhao, W Li, Y Fujikawa,...
... China, the Fund of Chinese Academy of Science, and by NSFC with code number of 50 1212 02, 60444005, 10574115 and 50 7210 91 B.C Pan thanks the support of National Basic Research Program of China (2006CB922000) ... three-body are parameterized By fitting to some bulk properties, the parameters for Si [20] and Ge [21] were, respectively, achieved According to these parameters, the parameters for the Ge–Si were ... et al., Chem Phys Lett 364 (2002) 251 [20] F.H Stillinger, T.A Weber, Phys Rev B 31 (1985) 5262 [21] K Ding, H.C Anderson, Phys Rev B 34 (1986) 6987 [22] M Laradji, D.P Landau, B Dnweg, Phys Rev...
... declare that they have no competing interests Received: 10 September 2010 Accepted: 21 February 2011 Published: 21 February 2011 References Cui Y, Zhong Z, Wang D, Wang WU, Lieber CM: High performance ... been modeled by Dubrovskii et al [19] and it has been observed in the NWs growth both by MBE [20 ,21] and EBE [14,22,23] In particular, the presence of a dip around the NWs Page of clearly demonstrates ... emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires Nano Lett 2006, 6 :214 0 Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Room-temperature ultraviolet...
... Then, the pre-carbonized tungsten ®lament above the substrate surface was electrically heated to 210 0°C The temperature of the substrate was measured to be 900°C The carbon deposition on SiNWs...
... proposed growth mechanism is supported by the results of Raman study as shown in Fig 3a The peak at 521 cmy1 is broad and strongly asymmetric compared to that from a single Si crystal Such a feature ... Tokumoto, J Vac Sci Technol B 15 Ž1997 1437 w8x A.M Morales, C.M Lieber, ACS meeting 1997, Vol 213 , pp651-INOR w9x A.M Morales, C.M Lieber, Science 279 Ž1998 208 w10x N Wang, Y.H Tang, Y.F Zhang,...
... their origin being attributed to presence of oxygen and oxygen-related defects in bulk Si wafers [21, 22] However, microscopic imaging of the pyramidal defects at 398 S Botti et al / Chemical Physics ... mostly smooth walls without any evidence of nanosized structures protruding out of the surface [15 ,21, 22] Often the pyramidal defects are buried below a rather homogeneous SiC layer which connects ... Gourbilleau, R Rizk, J Appl Phys 88 (2000) 3396 [9] S Botti, A Celeste, Appl Phys A 67 (1998) 421 [10] S Botti, R Ciardi, M.L Terranova, V Sessa, S Piccirillo, M Rossi, M Vittori-Antisari, Appl...
... 212 6 J.B Chang et al / Materials Letters 60 (2006) 212 5 212 8 Experiment Fig TEM image of Si nanoparticles by cathode arc plasma ... smooth nanowire and corresponding SAED pattern J.B Chang et al / Materials Letters 60 (2006) 212 5 212 8 212 7 Fig (a) TEM image showing catalysts at the end of nanotubes, (b) TEM image of an individual ... In this paper, we Fig Schematic figure of nanowires growth process 212 8 J.B Chang et al / Materials Letters 60 (2006) 212 5 212 8 expound SiNWs formation mechanism The solid–liquid–solid (SLS)...
... and helical-shaped nanowires have been fabricated previously using the VLS method [10,13–16, 19 21, 23,24] The growth of the SiOx nanowires in the present study can be divided into several steps ... Wavelength (nm) 800 900 Fig PL of the SiOx nanowires The blue light emission was revealed peaking at 421 and 448 nm summarize, we observed that the areal density of the SiOx nanowires decreased with ... Lowndes, Nano Lett (2003) 1279 [20] Z.W Pan, Z.R Dai, C Ma, Z.L Wang, J Am Chem Soc 124 (2002) 1817 [21] J.C Wang, C.Z Zhan, F.G Li, Solid State Commun 125 (2003) 629 [22] Z Zhang, G Ramanath, P.M...
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