tiết 21 học bài hát hoa lá mùa xuân
Theoretical investigation on thermal properties of silicon based nanostructures
... = 4, q = 0, a = 1.80, λ = 21. 0, γ = 1.20 The parameter set of SW potential for Ge was later developed by Ding et al in Ref [80] as the following ϵ = 1.93 eV, σ = 0 .218 1 nm, A = 7.049556277, (2.9) ... dependence of thermal conductivity in Ge/Si coreshell NWs with different cross section areas at 300 K 121 5.10 Temperature dependence of thermal conductivity reduction in Ge/Si core-shell NWs ... elemental semiconductors (Si, Ge) [7, 11], III-V semiconductors (GaN, GaAs, GaP, InP, InAs) [17 21] , II-VI semiconductors (ZnS, ZnSe, CdS, CdSe) [22–24] Interested readers can refer to the experimental...
Ngày tải lên: 10/09/2015, 08:38
Spontaneous growth and luminescence of si siox core shell nanowires
... Zhou, R.Q Zhang, H.Y Peng, N.G Shang, N Wang, I Bello, C.S Lee, S.T Lee, Chem Phys Lett 332 (2000) 215 ...
Ngày tải lên: 16/03/2014, 15:08
Báo cáo hóa học: " Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers" docx
... di-hydride bond, Si-H2, at about 214 0 cm-1 could also exist hidden in the tail of the Si-H peak at high wave numbers The shift with respect to the standard value of 210 0 cm-1 can be due to the presence ... possible existence of Si-H2 bonds could be suggested by spectrum B2 also showing a peak around 214 0 cm-1 Figure shows that, upon annealing, the SiH and Ge-H bonds break with consequent release ... according to which the binding energy of the Ge-H bond is smaller than that of the SiH bond [4 ,21- 24] In particular, Tsu et al [24] found that it is 69 kcal/mole for Ge-H and 76 kal/mole for...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo hóa học: " Preface to Symposium E: Nanoscaled Si, Ge based Materials" potx
Ngày tải lên: 21/06/2014, 06:20
Báo cáo hóa học: " In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron " potx
... that the {113} surfaces have been found to be one of the major low-energy surfaces of silicon [21, 22], meaning that the sidewall facettation leads to a lowering of the total surface energy of ... Reinhardt and W Kern (eds.) Handbook of Silicon Wafer Cleaning Technology, (William Andrew Inc., 2007) 21 A.A Baski, S.C Erwin, L.J Whitman, Surf Sci 392, 69 (1997) 22 Z Gai, R.G Zhao, W Li, Y Fujikawa,...
Ngày tải lên: 21/06/2014, 08:20
The composition dependent mechanical properties of ge si core–shell nanowires
... China, the Fund of Chinese Academy of Science, and by NSFC with code number of 50 1212 02, 60444005, 10574115 and 50 7210 91 B.C Pan thanks the support of National Basic Research Program of China (2006CB922000) ... three-body are parameterized By fitting to some bulk properties, the parameters for Si [20] and Ge [21] were, respectively, achieved According to these parameters, the parameters for the Ge–Si were ... et al., Chem Phys Lett 364 (2002) 251 [20] F.H Stillinger, T.A Weber, Phys Rev B 31 (1985) 5262 [21] K Ding, H.C Anderson, Phys Rev B 34 (1986) 6987 [22] M Laradji, D.P Landau, B Dnweg, Phys Rev...
Ngày tải lên: 16/03/2014, 15:22
Báo cáo hóa học: " Kinetics of Si and Ge nanowires growth through electron beam evaporation" ppt
... declare that they have no competing interests Received: 10 September 2010 Accepted: 21 February 2011 Published: 21 February 2011 References Cui Y, Zhong Z, Wang D, Wang WU, Lieber CM: High performance ... been modeled by Dubrovskii et al [19] and it has been observed in the NWs growth both by MBE [20 ,21] and EBE [14,22,23] In particular, the presence of a dip around the NWs Page of clearly demonstrates ... emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires Nano Lett 2006, 6 :214 0 Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Room-temperature ultraviolet...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" potx
Ngày tải lên: 14/03/2014, 13:20
Deposition of carbon nanotubes on si nanowires by chemical vapor deposition
... Then, the pre-carbonized tungsten ®lament above the substrate surface was electrically heated to 210 0°C The temperature of the substrate was measured to be 900°C The carbon deposition on SiNWs...
Ngày tải lên: 16/03/2014, 15:04
High frequency FTIR absorption of sio2 si nanowires
... Sample B Sample C 1130 (cmÀ1 ) 1160 (cmÀ1 ) 1200 (cmÀ1 ) 0.91 0.48 0.52 0.1 0.06 0.04 0 .21 0.08 0.05 0 .21 0.34 In another aspect, themselves of SiO2 /Si nanowires with micron-meter order length ... W Kaiser, P.H Keck, C.F Lange, Phys Rev 101 (1956) 1264 [14] D.W Berreman, Phys Rev 130 (1963) 219 3 ...
Ngày tải lên: 16/03/2014, 15:05
Si nanowires grown from silicon oxide
... proposed growth mechanism is supported by the results of Raman study as shown in Fig 3a The peak at 521 cmy1 is broad and strongly asymmetric compared to that from a single Si crystal Such a feature ... Tokumoto, J Vac Sci Technol B 15 Ž1997 1437 w8x A.M Morales, C.M Lieber, ACS meeting 1997, Vol 213 , pp651-INOR w9x A.M Morales, C.M Lieber, Science 279 Ž1998 208 w10x N Wang, Y.H Tang, Y.F Zhang,...
Ngày tải lên: 16/03/2014, 15:08
Si nanowires synthesized by laser ablation of mixed sic and sio2 powders
... S.C O’Brien, R.F Curl, R.E Smalley, Nature 318 Ž1985 62 w11x C Niu, Y.Z Lu, C.M Lieber, Science 216 Ž1993 334 w12x T Guo, P Nikolave, A.G Rinzler, D Tomanek, D.T Colbert, R.E Smalley, Chem Phys...
Ngày tải lên: 16/03/2014, 15:08
Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles
... their origin being attributed to presence of oxygen and oxygen-related defects in bulk Si wafers [21, 22] However, microscopic imaging of the pyramidal defects at 398 S Botti et al / Chemical Physics ... mostly smooth walls without any evidence of nanosized structures protruding out of the surface [15 ,21, 22] Often the pyramidal defects are buried below a rather homogeneous SiC layer which connects ... Gourbilleau, R Rizk, J Appl Phys 88 (2000) 3396 [9] S Botti, A Celeste, Appl Phys A 67 (1998) 421 [10] S Botti, R Ciardi, M.L Terranova, V Sessa, S Piccirillo, M Rossi, M Vittori-Antisari, Appl...
Ngày tải lên: 16/03/2014, 15:08
Si nanowires synthesized with cu catalyst
... [1] [2] [3] [4] [5] [6] [7] [8] [9] Y Cui, X Duan, J Hu, C.M Lieber, J Phys Chem., B 104 (2000) 5213 Y Cui, C.M Lieber, Science 291 (2001) 851 Y Cui, Q Wei, H Park, C.M Lieber, Science 293 (2001) ... Phys Lett (1961) 89 Y Cui, L.J Lauhon, M.S Gudiksen, J Wang, C.M Lieber, Appl Phys Lett 78 (2001) 2214 181 [10] Y Yao, F.H Li, S.T Lee, Chem Phys Lett 406 (2005) 381 [11] S Ge, K Jiang, X Lu, Y Chen,...
Ngày tải lên: 16/03/2014, 15:12
Ultrafast growth of single crystalline si nanowires
... 212 6 J.B Chang et al / Materials Letters 60 (2006) 212 5 212 8 Experiment Fig TEM image of Si nanoparticles by cathode arc plasma ... smooth nanowire and corresponding SAED pattern J.B Chang et al / Materials Letters 60 (2006) 212 5 212 8 212 7 Fig (a) TEM image showing catalysts at the end of nanotubes, (b) TEM image of an individual ... In this paper, we Fig Schematic figure of nanowires growth process 212 8 J.B Chang et al / Materials Letters 60 (2006) 212 5 212 8 expound SiNWs formation mechanism The solid–liquid–solid (SLS)...
Ngày tải lên: 16/03/2014, 15:13
Characteristics of siox nanowires synthesized via the thermal heating of cu coated si substrates
... and helical-shaped nanowires have been fabricated previously using the VLS method [10,13–16, 19 21, 23,24] The growth of the SiOx nanowires in the present study can be divided into several steps ... Wavelength (nm) 800 900 Fig PL of the SiOx nanowires The blue light emission was revealed peaking at 421 and 448 nm summarize, we observed that the areal density of the SiOx nanowires decreased with ... Lowndes, Nano Lett (2003) 1279 [20] Z.W Pan, Z.R Dai, C Ma, Z.L Wang, J Am Chem Soc 124 (2002) 1817 [21] J.C Wang, C.Z Zhan, F.G Li, Solid State Commun 125 (2003) 629 [22] Z Zhang, G Ramanath, P.M...
Ngày tải lên: 16/03/2014, 15:14
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... Cryst Growth 31 (1975) 20 [5] Y Cui, L.J Lauhon, M.S Gudiksen, J Wang, Appl Phys Lett 78 (2001) 2214 [6] J Westwater, D.P Gosain, S Tomiya, S Usui, H Ruda, J Vac Sci Technol B 15 (1997) 554 [7]...
Ngày tải lên: 16/03/2014, 15:15
Formation of silicon oxide nanowires directly from au si and pd–au si substrates
Ngày tải lên: 16/03/2014, 15:16
Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
... V Zhuravlev, N Krasovskaya, Mater Sci Eng A 245 (1998) 293 [13] L.Z Mezey, J Giber, J Appl Phys 21 (1982) 1569 [14] Ch Wohlfahrt, B Wohlfahrt, Landolt-Bornstein New Series IV/16 ¨ (1997) [15]...
Ngày tải lên: 16/03/2014, 15:17
Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of si nanowires
Ngày tải lên: 16/03/2014, 15:18