tiết 19 mở rộng vốn từ từ ngữ về các mùa
Theoretical investigation on thermal properties of silicon based nanostructures
... phonon participation ratio versus core-shell ratio in Ge/Si core-shell NWs 119 5.9 Structure dependence of thermal conductivity in Ge/Si coreshell NWs with different cross section ... decades, since the experimental synthesis of carbon nanotubes (CNTs) by Iijima [1] in the early 199 0s From the fundamental physics point of view, they are of great interest because they can serve ... peak depends on particular material system and typically occurs at carrier concentration between 1 019 and 1021 carriers per cm3 , which falls in between common metals and heavily doped semiconductors...
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Spontaneous growth and luminescence of si siox core shell nanowires
... Foundation of Jilin (Grant No 199 90514), the National Natural Science Foundation of China (Grant No 10274082) and the State Key Project of Fundamental Research of China (Grant No 199 8061309) [10] [11] ... 77 (2000) 3349 A.M Morales, C.M Lieber, Science 279 (199 8) 208 N Wang, Y.H Tang, Y.F Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (199 9) 237 J.L Gole, J.D Stout, W.L Rauch, Z.L Wang, Appl ... Xue, Appl Phys Lett 82 (2003) 1769 Z.L Wang, R.P Gao, J.L Gole, J.D Stout, Adv Mater 12 (2000) 193 8 L.J Lauhon, M.S Gudiksen, D Wang, C.M Lieber, Nature 420 (2002) 57 Y Cui, C.M Lieber, Science...
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Báo cáo hóa học: " Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers" docx
... germanium J Non-Cryst Solids 199 6, 198 -200:40 22 Chou YP, Lee SC: Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloys J Appl Phys 199 8, 83:4111 23 Walther ... IL New York: AIP Press; 199 7:631 12 Szilágyi E, Pászti F, Amsel G: Theoretical approximations for depth resolution calculations in IBA methods Nucl Instrum Methods B 199 5, 100:103 Frigeri et ... Metallic Films Deposited by Electrolysis Proc R Soc Lond A 190 9, 32:172 15 Nix WD: Mechanical properties of thin films Metall Trans A 198 9, 20:2217 16 Wertman JJ, Evans RA: Young’s Modulus, Shear...
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Báo cáo hóa học: " In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron " potx
... the rounding of 123 193 8 Nanoscale Res Lett (2010) 5 :193 5 194 1 Stripe pattern after 520°C Si buffer (a) nm Si (001) ( 119) 40nm (114) (113) (114) ( 119) { 113} {114} h=35nm { 119} nm 400 nm SOM (b) ... RHEED intensity (rel.units) Nanoscale Res Lett (2010) 5 :193 5 194 1 18 nm at 520°C (g) Si buffer growth (113) 25 nm at 450°C (d) (b) (c) (e) ( 119) (f) Spec.Spot 17nm Si at 520°C 10 15 20 25 30 35 ... 113} {114} h=35nm { 119} nm 400 nm SOM (b) 20 nm Si (001) 18nm ( 119) { 119} h=12nm nm SOM facet spots: 400 nm {113} SOM {114} { 119} (001) Fig STM images of the surface evolution of the stripe-patterned...
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The composition dependent mechanical properties of ge si core–shell nanowires
... Stillinger, T.A Weber, Phys Rev B 31 (198 5) 5262 [21] K Ding, H.C Anderson, Phys Rev B 34 (198 6) 6987 [22] M Laradji, D.P Landau, B Dnweg, Phys Rev B 51 (199 5) 4894 [23] E.M Ronald, B.S Vijay, ... Lee, R.E Rudd, Phys Rev B 75 (2007) 195 328 [17] B Lee, R.E Rudd, Phys Rev B 75 (2007) 041305 [18] A.J Kulkarni, M Zhou, F.J Ke, Nanotechnology 16 (2005) 2749 [19] R.Q Zhang, et al., Chem Phys Lett ... core–shell nanowires with hexagonal cross section on the basis of diamond-structured crystals [19] For example, a Si-core (that is a nanowire) orientated along ½1 1 direction is isolated from...
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Báo cáo hóa học: " Kinetics of Si and Ge nanowires growth through electron beam evaporation" ppt
... implantation of Ge crystals Solid State Commun 197 7, 21:1 019 26 Olson GL, Roth J: Kinetics of solid phase crystallization in amorphous silicon Mater Sci Rep 198 8, 3:1 27 Zakharov ND, Werner P, Gerth ... Nanotechnology 2008, 19: 485606 18 Pecora EF, Irrera A, Priolo F: Influence of O contamination and Au cluster properties on the structural features of Si nanowires Thin Solid Films 2010, 518:2562 19 Dubrovskii ... 2007 12 Wagner RS, Ellis WC: Vapor-liquid-solid mechanism of single crystal growth Appl Phys Lett 196 4, 4:89 13 Hannon JB, Kodambaka S, Ross FM, Tromp RM: The influence of the surface migration...
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Deposition of carbon nanotubes on si nanowires by chemical vapor deposition
... Iijima, Nature (London) 354 (199 1) 56 [2] A.M Morales, C.M Lieber, Science 279 (199 8) 208 [3] Y.F Zhang, Y.H Tang, N Wang, C.S Lee, I Bello, S.T Lee, Appl Phys Lett 72 (199 8) 1835 [4] A.G Rinzler, ... Yang, C.M Lieber, Nature (London) 399 (199 9) 49 [8] C.H Wang, J.S Choi, T.T Tran, A.D Bacher, J Phys Chem B 103 (199 9) 7449 [9] P.M Ajayan, S Iijima, Nature 361 (199 3) 333 [10] S.C Tsang, Y.K Chen, ... Harris, M.L.H Green, Nature 372 (199 4) 159 [11] J Sloan, J Hammer, M.Z Sibbley, M.L.H Green, Chem Commun (199 8) 347 [12] S.T Lee, N Wang, Y.F Zhang, Y.H Tang, MRS Bull 24 (199 9) 36 [13] N Wang, Y.H...
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High frequency FTIR absorption of sio2 si nanowires
... Non-Cryst Solids 38–39 (198 0) 87 [2] C.T Kirk, Phys Rev B 38 (199 8) 1255 [3] J.R Martinez, F Ruiz, Y.V Vorobiev, F Perez-Robles, J Gonzalez-Hernandez, J Chem Phys 109 (199 8) 7511 [4] C.J Brinker, ... Solids 70 (196 5) 301 [5] A.I Klimovskaya, I.P Ostrovaki, A.S Ostrovskaya, Phys Status Solidi(a) 153 (199 6) 465 [6] J Westwater, D.P Gosain, S Tomiya, S Usui, J Vac Sci Technol B 15 (199 7) 554 ... Lett 70 (199 7) 1852 [8] Y.F Zhang, Y.H Tang, N Wang, C.S Lee, S.T Lee, Appl Phys Lett 72 (199 8) 1835 [9] S.T Lee, Y.F Zhang, N Wang, Y.H Tang, I Bello, C.S Lee, Y.W Chung, J Mater Res 14 (199 9)...
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Si nanowires grown from silicon oxide
... Hempstead, Opt Mater 199 6 99 w14x U Setiowati, S Kimura, J Am Ceramic Soc 80 199 7 757 w15x G Hass, C.D Salzberg, J Opt Soc Am 44 195 4 181 w16x G Nolsson, G Nelin, Phys Rev B 197 2 3777 ... Technol B 15 199 7 1688 w5x Y Wada, T Kure, T Yoshimura, Y Sudou, T Kobayashi, Y Gotou, S Kondo, J Vac Sci Technol B 12 199 4 48 w6x T Ono, H Saitoh, M Esashi, Appl Phys Lett 70 199 7 1852 w7x ... H Tokumoto, J Vac Sci Technol B 15 199 7 1437 w8x A.M Morales, C.M Lieber, ACS meeting 199 7, Vol 213, pp651-INOR w9x A.M Morales, C.M Lieber, Science 279 199 8 208 w10x N Wang, Y.H Tang, Y.F...
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Si nanowires synthesized by laser ablation of mixed sic and sio2 powders
... PA, 199 7 w18x Z.C Feng, A.J Mascarenhas, W.J Choyke, J.A Powell, J Appl Phys 64 198 8 3176 w19x I.H Campbell, P.M Fauchet, Solid State Commun 58 198 4 739 w20x G Nolsson, G Nelin, Phys Rev B 197 2 ... Murase, J Vac Sci Technol B 13 199 5 2532 w7x T Ono, H Saitoh, M Esashi, Appl Phys Lett 70 199 7 1852 w8x N Wang, Y.H Tang, Y.F Zhang, C.S Lee, S.T Lee, Chem Phys Lett 299 199 9 237 20 Y.H Tang et ... Smalley, Nature 318 198 5 62 w11x C Niu, Y.Z Lu, C.M Lieber, Science 216 199 3 334 w12x T Guo, P Nikolave, A.G Rinzler, D Tomanek, D.T Colbert, R.E Smalley, Chem Phys Lett 243 199 5 49 w13x N Wang,...
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Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles
... Sundgren, J Cryst Growth 182 (199 7) 379 J Hofmann, S Veprek, J Heindl, J Appl Phys 85 (199 9) 2652 S Gunther, A Kolmakov, J Kovac, M Kiskinova, Ultramicroscopy 75 (199 8) 35 [19] J Daz, G Paolicelli, ... Morrison, Rev Sci Instrum 66 (199 5) 4870 L Gregoratti, M Marsi, M Kiskinova, Synchrotron Rad News 12 (199 9) 40 R Scholz, U G€sele, E Niemann, F Wischmeyer, Appl o Phys A 64 (199 7) 115 L.-O Bjorketun, ... C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (199 9) 237 [6] Y.F Zhang, Y.H Tang, H.Y Peng, N Wang, C.S Lee, I Bello, S.T Lee, Appl Phys Lett 75 (199 9) 1842 [7] Y.F Zhang, Y.H Tang, N Wang, D.P...
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Si nanowires synthesized with cu catalyst
... Massalski, Binary Alloy Phase Diagram, Second editionASM International, 199 0 [18] J.K Solberg, Acta Crystallogr., A 34 (197 8) 684 ... D.D.D Ma, S.T Lee, J Shinar, Appl Phys Lett 87 (2005) 033107 R.S Wagner, W.C Ellis, Appl Phys Lett (196 1) 89 Y Cui, L.J Lauhon, M.S Gudiksen, J Wang, C.M Lieber, Appl Phys Lett 78 (2001) 2214 181 ... D.P Yu, Y.J Xing, Q.L Hang, et al., Phys E (2001) 305 [14] M Morales, C.M Lieber, Science 279 (199 8) 208 [15] S Jin, Q Li, C.S Lee, Phys Status Solidi, A Appl Res 188 (2001) R1 [16] D.A Hodges,...
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Ultrafast growth of single crystalline si nanowires
... Lee, Chem Phys Lett 283 (199 8) 368 [5] Y.F Zhang, Y.H Zhang, N Wang, D.P Yu, C.S Lee, I Bello, S.T Lee, Appl Phys Lett 72 (199 8) 1835 [6] D.P Yu, et al., Appl Phys Lett 72 (199 8) 3458 [7] S Hofmann, ... Science, who give a lot of help References [1] Alfredo M Morales, Charles M Lieber, Science 279 (199 8) 208 [2] N Wang, B.D Yao, Y.F Chan, X.Y Zhang, Nano Lett (2003) 475 [3] Xin yuan Zhao, M Wei, ... Gosele, Appl Phys., A Mater Sci Process 74 (2002) 423 [9] R.S Wagner, W.C Ellis, Appl Phys Lett (196 4) 89 [10] Junjie Niu, Jian Sha, Xiangyang Ma, Chem Phys Lett 367 (2003) 528 [11] J.O Hu, Y Jing,...
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Characteristics of siox nanowires synthesized via the thermal heating of cu coated si substrates
... [10] S Iijima, Nature 354 (199 1) 56 A Morales, C.M Lieber, Science 279 (199 8) 208 Z.W Pan, Z.R Dai, Z.L Wang, Science 291 (2001) 194 7 S Mann, G.A Ozin, Nature 382 (199 6) 313 A Katz, M.E Davis, ... Nature 359 (199 9) 710 H Nishikawa, T Shiroyama, R Nakamura, Y Ohiki, K Nagasawa, Y Hama, Phys Rev B 45 (199 2) 586 L.S Liao, X.M Bao, X.Q Zhang, N.S Li, N.B Min, Appl Phys Lett 68 (199 6) 850 S.-H ... curved, and helical-shaped nanowires have been fabricated previously using the VLS method [10,13–16, 19 21,23,24] The growth of the SiOx nanowires in the present study can be divided into several steps...
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Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... Cryst Growth 31 (197 5) 20 [5] Y Cui, L.J Lauhon, M.S Gudiksen, J Wang, Appl Phys Lett 78 (2001) 2214 [6] J Westwater, D.P Gosain, S Tomiya, S Usui, H Ruda, J Vac Sci Technol B 15 (199 7) 554 [7] ... National Program for Tera Level Nano Devices through MOST References [1] A.P Alivisatos, Science 271 (199 6) 933 [2] Y Cui, C.M Lieber, Science 291 (2001) 851 [3] Y Xia, P Yang, Y Sun, Y Wu, B Mayers,...
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Formation of silicon oxide nanowires directly from au si and pd–au si substrates
... S.Q Feng, Appl Phys Lett 73 (199 8) 3076 [7] L Tong, J Lou, R.R Gattas, S He, X Chen, L Liu, E Mazur, Nano Lett (2005) 259 [8] A.M Morales, C.M Lieber, Science 279 (199 8) 208 [9] Z.Q Liu, S.S Xie, ... A1100-0501-0073 The authors thank Dr J M Yang for TEM characterization References [1] S Iijima, Nature 354 (199 1) 56 [2] M.H Huang, S Mao, H Feick, H Yan, Y Wu, H Kind, E Weber, R Russo, P Yang, Science 292 ... Wang, J Mater Res 16 (2001) 683 [10] N Wang, Y.H Tang, Y.F Zhang, C.S Lee, S.T Lee, Phys Rev B 58 (199 8) R16024 [11] Z.Q Liu, Z.W Pan, L.F Sun, D.S Tang, W.Y Zhou, G Wang, L.X Qian, S.S Xie, J Phys...
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Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
... (198 2) 1569 [14] Ch Wohlfahrt, B Wohlfahrt, Landolt-Bornstein New Series IV/16 ¨ (199 7) [15] D.B Asay, S.H Kim, J Chem Phys 124 (2006) 174712 [16] B Janczuk, A Zdziennicka, J Mater Sci 29 (199 4) ... Physics, Chem Mech Surf (198 4) 1091 [11] W Jun, C.E.J Mitchell, R.G Egdell, J.S Foord, Surf Sci 506 (2002) 66 2467 [12] Y.V Naidich, V Zhuravlev, N Krasovskaya, Mater Sci Eng A 245 (199 8) 293 [13] L.Z ... Rev 31 (197 0) 187 [8] N.D Zakharov, P Werner, G Gerth, L Schubert, L Sokolov, U Gosele, J Cryst Growth 290 (2006) 6–10 ¨ [9] C.E Allen, R Ditchfield, E.G Seebauer, J Vac Sci Technol A 14 (199 6)...
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Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of si nanowires
... 0.99, and 0.995, respectively Corresponding sb values of the ratio of times tb/ts are 9, 19, 57.8, 99, and 199 any of the three above-mentioned steady states, which correspond to Eq (4) roots Thus, ... 2, Addison-Wesley Publishing Company, New York, 198 8 [10] D.W Heerman, Computer Simulations Methods in Theoretical Physics, Springer, Berlin, 198 6 [11] A Frank-Kamenetskii, Diffusion and Heat ... E.I Givargizov, Growth of Filament-Like and Platelet Crystals from Vapor, Nauka Press, Moscow, 197 7 (in Russian); D.N McIlroy, D Zhang, Y Kranov, M Grant Morton, Appl Phys Lett 79 (2001) 1540...
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