switching´s impact on the feasible set
Tài liệu Introduction to Biosensors doc
... electrons in the N-type silicon are forced to jump into the holes of the P-type silicon, and continue to travel to the high voltage side of a battery Therefore, the diode allows the electrons to ... holes in the P-type silicon, forcing the holes to move to the left Holes from the high voltage of a battery attract the electrons in the N-type silicon, again forcing the electrons to move to the ... resistors Insert the first lead to one horizontal tie point and the second lead to the other tie point Then insert one lead of your digital multimeter (DMM) to each of the tie points As the resistor...
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Tài liệu National Semiconductor`s Temperature Sensor Handbook pdf
... dissipation, and the thermal resistance from the case to the heat sink Similarly, the power device’s case temperature depends on the device’s power dissipation and the thermal resistance from the ... mounted on the opposite side of the motherboard, as shown in Figure 4.3 In these systems, the sensor can be soldered to the board at the edge of the heat sink Since the microprocessor is in close contact ... equal to the sum of their resistances Another variation on this approach uses a MOSFET to turn the fan on at the lower temperature threshold, and the fan’s speed control input to increase the fan’s...
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Báo cáo "Investigation of the embedded fiber bragg grating temperature sensor " pdf
... the thermal expansion of the substrate is dominated over the thermal contraction of the fiber, and the wavelength shift is governed by the strain induced by the substrate thermal expansion and thermo-optic ... 23 (2007) 237-242 expansion coefficient of the base may add the extra nonlinearity in the shift The theoretical prediction of the nonlinearity in the thermal response of the Bragg wavelength was ... 25°C The wavelength shift observed for bar FBG is dominated by the thermo-optic coefficient of the fiber with a contribution the thermal contraction of the fiber itself, while for embedded FBGs the...
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Temperature sensors in SOI CMOS for high temperature applications
... depth of the depletion region in the channel, whereas for an FDSOI transistor, the silicon surface layer is equal to the depth of the depletion region in the channel Thus, the bulk of the transistor ... a FDSOI transistor, the channel doping concentration must be low enough that the depletion region extends throughout the entire thickness of the silicon layer When the silicon surface layer is ... designs, one in the conventional temperature [27] and one in the high temperature category [28] are discussed here One of the main error sources in any BGR design is the process variation of VBE , the...
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AN0762 applications of the TC62X solid state temperature sensors
... cycling by adding the solar panel’s thermal time constant to the hysteresis To select the set point resistors, consult the thermistor data sheet for the thermistor’s value at the desired temperature ... switch, either the Heat or Cool LED will be lit The second driver controls the “Comfort Zone” LED indicator When the temperature is between the two set points (i.e in the 5°F hysteresis zone) this ... closed, the third driver is disabled and the fourth driver is enabled to control the cooling contactor This driver turns on the cooling contactor when the TC620’s control output is high The logic...
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AN0773 application circuits of the TC620TC621 solid state temperature sensors
... lit The second driver is used to drive the “Comfort Zone” LED indicator When the temperature is between the Regulate ON “H” Option This design requires only four wires from the thermostat to the ... is set for a wide (20°F) span The thermal time constant of the solar panel will also aid in the prevention of rapid pump cycling, if the thermal resistance between the thermistor assembly and the ... input The AND gate has one non-inverting input and one inverting input The first driver is used to drive an LED indicator Depending on the position of the Heat/Cool selector switch, either the...
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AN0871 solving thermal measurement problems using TC72 and TC77 digital silicon temperature sensors
... communication interface to a microcontroller allows the user the ability to select either the Continuous Temperature Conversion, One-shot or the powersaving Shutdown operating mode, in addition to ... Note that the thermal response measurement of a silicon sensor varies by the size of the PCB that the sensor is mounted on and also by the IC’s package Silicon sensors provide a “non-contact” temperature ... AN871 the surface by using a thermally-conductive adhesive, such as thermal epoxy The self-heating error of the sensor is small because of the TC72 and TC77’s low power consumption Therefore, the...
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AN0895 oscillator circuits for RTD temperature sensors
... Relaxation Oscillator Design Equations In this section, the equations that describe the circuit oscillation are derived From these equations, the relationship of the oscillation frequency to the ... provides a RSS estimation of the error of the resistors and capacitor on the output frequency of the relaxation oscillator The test results from the previous section show that the comparator output ... in the “Oscillator Component Selection Guidelines” section of this document The major error term of the relaxation oscillator is due to the tolerance of the capacitor Thus, a calibration of the...
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AN1001 IC temperature sensor accuracy compensation with a PIC® microcontroller
... COMPENSATION Equation 8, Equation and Equation 10 show the 2nd order error equation of the tested parts for the MCP9800, MCP9700 and MCP9701, respectively Since these devices have functional differences, ... equation that is used to compensate the sensor error EC1 = 1st Order Error Coefficient EQUATION 7: Once the error slope is calculated, the corresponding offset is determined at cold by adjusting the ... its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions • There are dishonest and possibly illegal...
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a room-temperature operated hydrogen leak sensor
... reduction/oxidation of WO3 The basic concept is the formation of tungsten bronze with the intercalation of hydrogen ions But the oxygen removal by hydrogen reduction and water formation on (1 0) plain of ReO3 ... responses improved with the repeated exposure to hydrogen The improvement in response could be interpreted by the accumulation of the water in the film generated by hydrogen exposure The response ... The response to the humid gas is high and fast The response slightly decreased in the second exposure, but decrease was small in comparison to the dry gas response The calibration curve for hydrogen...
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a selective nh3 gas sensor based on fe2o3–zno nanocomposites at room temperature
... interactions with a sensor based on heterojunction oxide structures The reactivity of oxides in acid–base reactions depends on the electronegativity of the metal cation The electronegativity is the ... comparison, the current response of the gas sensors based on Fe2 O3 –ZnO nanocomposites with different compositions of Fe:Zn as a function of time was measured The same testing conditions were ... dropwise The reaction mixture was stirred for h The resulting solution was concentrated by the evaporation of the solvent The resulting white product was centrifugalized, washed with deionized...
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influence of polymerization temperature on nh3 response of pani tio2 thin film gas sensor
... films contact with NH3 by gas injection, which may be due to the surface adsorption effect, and the chemisorptions leads to the formation of ammonium However, the interaction process between the ... aggregation was triggered by heterogeneous nucleation, and the nucleation behavior of PANI is strongly dependent on the polymerization rate determined by reaction temperature As the formation of ... increasing the gas concentration The reason to cause this phenomenon is that an increase in concentration leads to an increased amount of chemisorbed NH3 , which in turn enhances the desorption rate...
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la nanotubes sensor for room temperature detection of ammonia
... capacitance varied with the NH3 concentration monotonically but nonlinearly, while the dielectric loss was nonmonotonically related to the NH3 concentration When the NH3 Fig The plots of (a) and ... loss responses to the stepwise decreases of the NH3 concentration at a frequency of 10,000 Hz in Fig From the plot we can see that the capacitance of the device increases along with the increasing ... the device decreased along with the decreasing NH3 concentration The capacitance and dielectric loss variation versus NH3 concentration was measured for the same device and the plots are shown 2.5...
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low - level detection of ethanol and h2s with temperature - modulated wo3 nanoparticle gas sensors
... matrix contains the contribution of the original response vectors to the new response vectors or PCs, the score matrix contains the response vectors projected onto the space defined by the PCs The ... responses of the sensor Furthermore, DWT provided fast data extraction as it required computations only over one period of the response transient Conclusions Low concentration detection of ethanol ... FFT for the extraction of information from the response of the thermally modulated gas sensor, and it was also faster to compute as only one period of the sensor response was sufficient for the analysis...
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low-temperature h2s sensors based on ag-doped fe2o3 nanoparticles
... dispersion of Ag particles on the surface of ␣-Fe2 O3 The particles of Ag are too small to be identified by the conventional X-ray diffraction method When Ag content increased to wt%, the diffraction ... generally mentioned earlier, the gas-sensing mechanism of ␣-Fe2 O3 -based sensors belongs to the surface-controlled type, which is based on the change in conductance of the semiconductor The oxygen ... The oxygen species capture electrons from the material, which results in the concentration changes of holes or electrons in the Ag/␣-Fe2 O3 semiconductor When the sensor is exposed to H2 S, the...
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room temperature liquefied petroleum gas (lpg) sensor based on p - polyaniline n - tio2 heterojunction
... was heated At 353 K, the precipitation was started in the bath During the precipitation, heterogeneous reaction occurred and deposition of TiO2 took place on the substrates The substrate coated ... the presence of sufficient gas molecules at the interface of the junction for reaction to occur From the same graph, it is found that for higher concentrations of LPG, the recovery time was long ... due to the heavier nature of LPG and the reaction products are not leaving from the interface immediately after the reaction Fig Variation of response and recovery time of the heterojunction sensor...
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room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film
... nanorods film The film was fabricated under the same experimental conditions on a silicon substrate instead of on the Si-based membrane due to the difficulties in sample handing and availability The resulting ... correlated with the interaction strength between the analyte vapors and the sensing layer Since the desorption rate of adsorbed analytes greatly depends on the bound interaction energy, the recovery ... analytes on the mobility of free charge carriers The number of collision experienced by the carriers in the bulk of the grain becomes comparable with the number of surface collisions because of the...
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room-temperature semiconductor gas sensor based on nonstoichiometric
... nanorods film The film was fabricated under the same experimental conditions on a silicon substrate instead of on the Si-based membrane due to the difficulties in sample handing and availability The resulting ... correlated with the interaction strength between the analyte vapors and the sensing layer Since the desorption rate of adsorbed analytes greatly depends on the bound interaction energy, the recovery ... analytes on the mobility of free charge carriers The number of collision experienced by the carriers in the bulk of the grain becomes comparable with the number of surface collisions because of the...
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wo3 sensor response according to operating temperature experiment and modeling
... considering the effect of surrounding gases on the surface of the grains constituting the sensitive layer on the one hand and the electronic transport mechanisms in and between the grains on the ... of the WO3 crystalline structure The electrical charge of the transition zone that lies at the periphery of the grains is induced by the environment of the layer The equations retained in the ... to this theory, conduction electrons can be trapped by surface states driven by the energy difference between the conduction band and surface states The conductance of the SnO2 layer can then be...
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wo3 thin film sensor prepared by sol–gel technique and its low-temperature sensing properties to trimethylamine
... shows the relationship between the gas sensitivity and TMA concentrations at 70◦ C: the gas sensitivity of the sensor increases with TMA concentration The detectable minimal concentration of ... concentrations Fig The relationship between the gas sensitivity and TMA concentration at 70◦ C NH3 , gasoline, C2 H5 OH, CH4 and CO at the same concentration of 1000 ppm and to water vapor These ... Fig shows the typical gas response characteristic of the WO3 thin film sensor After an introduction of 500 ppm TMA gas, the response appears immediately The 90% response time is 2.5 s and the 90%...
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