silicon carbide applications in power electronics

... reference books on cutting-edge areas of engineering Also included in this series will be single-authored professional books on state-of-theart techniques and methods in engineering Its objective ... by fostering new contacts and research areas Four Ph.D studies have been carried out in power electronics and drives Finally, the training and education of engineers were also offered in the program ... load includes some inductance, L In absence of that switch, interrupting the current would cause a dangerous impulse overvoltage, Ldio =dt ! À1 Instead of listing the input–output relations as in...

Ngày tải lên: 16/03/2014, 08:20

... occupied area minimization, scalability, power consumption minimization and limit cycle containment play a key role The power electronics engineer is, in this case, deeply involved in the solution ... developments in its application to power converters 1.1 MODERN POWER ELECTRONICS Classical power electronics may be considered, under several points of view, a mature discipline The technology and engineering ... For example, in the case of MOSFET or IGBT switches the driving action consists in the charging and discharging of the device input capacitance, which is, in fact, a power consuming operation...

Ngày tải lên: 14/05/2014, 21:44

... occupied area minimization, scalability, power consumption minimization and limit cycle containment play a key role The power electronics engineer is, in this case, deeply involved in the solution ... developments in its application to power converters 1.1 MODERN POWER ELECTRONICS Classical power electronics may be considered, under several points of view, a mature discipline The technology and engineering ... ISSN: 1930-9533 print electronic First Edition 10 Printed in the United States of America Digital Control in Power Electronics Simone Buso Department of Information Engineering University of...

Ngày tải lên: 26/11/2015, 11:32

... Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Silicon Carbide - Materials, Processing ... Beijing Institute of Technology 2School of Aerospace, FML, Department of Engineering Mechanics, Tsinghua University, Beijing, China Introduction Excellent physical and chemical properties make silicon ... that explains the considerable effort made in the industrial SiC engineering At a first glad, silicon and carbide are close but a careful inspection reveals different properties leading to brothers...

Ngày tải lên: 19/06/2014, 11:20

... with single 6-rings in ABC sequence with single 4-rings or 6-2 rings (b) ATO with single 4- or 6-rings (c) AFI with single 4- or 6-rings (d) VFI with single 6-rings (e) ATV with single 4-rings ... ordering in amorphous phase is the key point for applications in optoelectronics devices 34 12 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH ... achieved controlling the stacking mode (polytypism assimilated to stacking 32 10 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH model 3C-SiC...

Ngày tải lên: 19/06/2014, 11:20

... 2009, 2010) Photoluminescence spectrum from the front surface of the nanocrystalline film 70 Silicon Carbide – Materials, Processing and Applications in Electronic Devices containing cubic 3C and ... as well as the insulating layers in the manufacture of integrated circuits Silicon structures with a hidden layer of silicon carbide can be used as a SOIstructure (silicon- on-insulator), which ... implantation into silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form polycrystalline or epitaxial cubic SiC (β-SiC) layers in silicon (Liangdeng...

Ngày tải lên: 19/06/2014, 11:20

... 100 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Really, as seen in Table 5, the increase of carbon concentration x in the layer SiC0,12 in times in comparison ... formed the graphite grains, beginning from W = 0.5 J/cm2 102 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Tetelbaum et al (2009) by implantation in SiO2 film of Si ... layer only in 1.91 times Further increase in the concentration of carbon x in the SiCх layers in 13, 23, 32, 47 times leads to an increase in the number of optically active Si−C-bonds in several...

Ngày tải lên: 19/06/2014, 11:20

... 2004) was introduced In Fig 4, the horizontal coordinate is along the dashed line in Fig 3, and the longitudinal coordinate is the intensity ratio According to the intensity ratio, the scanning scope ...  j '  =  cos δ sin δ cos γ − cos δ sin δ    − cos δ sin γ  k '   cos δ sin δ cos γ − cos δ sin δ cos2 δ + sin δ cos γ − sin δ sin γ cos δ sin γ   i    sin δ sin γ   j    ... during pressurization and hence allows obtaining in a single experiment the entire drainage curve characterizing capillarity in high-temperature infiltration of particles by molten metal (Bahraini...

Ngày tải lên: 19/06/2014, 11:20

... a confinement dimension in the range of 2.5 to nm, in good agreement with the TEM image After 10h annealing, the TO and LO peaks become sharper and more intense, indicating an increase in the ... of Korea Introduction Structural defects in silicon carbide (SiC) single crystals such as dislocations, micropipes, inclusions, etc., have been investigated by different methods, including x-ray ... surprising due to the model of an in nite medium considered within the classical theory of linear elasticity Moreover, in reality, the dislocation 192 Silicon Carbide – Materials, Processing and Applications...

Ngày tải lên: 19/06/2014, 11:20

... GRMF in both oxidizing ambient 218 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 11 Determination of growth rate multiplication factor between both terminating ... for monitoring involved gases into and out of the process tubes and a loading station used for loading (or unloading) wafers into (or from) the process tubes as shown in figure The heating assembly ... of a certain size; at large values the pore occupies the whole inclusion boundary 204 18 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH Summary...

Ngày tải lên: 19/06/2014, 11:20

... (2004) Silicon Carbide: Fundamental Questions and Applications to current device technology, Springer-Verlag, Berlin, Germany 256 26 Silicon Carbide – Materials, Processing and Applications in Electronic ... for treating long range interactions in ab initio and force-field-based calculations in clusters, J Chem Phys 110: 2810–2821 Tuckerman, M E & Parrinello, M (1994) Integrating the car-parrinello ... 248 18 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH Fig Snapshot of the SiC-2×2 surface Pink and grey spheres represent carbon and silicon...

Ngày tải lên: 19/06/2014, 11:20

... incorporation of C does not induce significant interface reconstruction Namely, the two Si layers proximal to the interface maintain the stacking 299 Introducing Ohmic Contacts into Silicon Carbide ... Extinct Vanadium-49 in Presolar Silicon Carbide Grains from Supernovae, Astrophys J., Vol 576, No 1, pp L69-L72 Hoppe, P., & Ott, U (1997) Mainstream silicon carbide grains from meteorites, In: ... structure and relating it to device properties, revealing, in this way, physics origin of contact issues in SiC electronics In addition to determining atomic structure of 4H-SiC/Ti3SiC2 interface, the...

Ngày tải lên: 19/06/2014, 11:20

... Three stages of an example process of HPHT sintering: – loading, – sintering, – unloading 314 Silicon Carbide – Materials, Processing and Applications in Electronic Devices 2.2 Samples preparation ... phases in the reaction between silicon carbide and silicon nitride Sintering of composites, especially at higher temperatures, leads to lower grain growth than it is in single-phase powders sintered ... Ceradyne Inc and Saint – Gobain Advanced Ceramics – commercial data sheets) 322 Silicon Carbide – Materials, Processing and Applications in Electronic Devices For all the investigated samples, independently...

Ngày tải lên: 19/06/2014, 11:20

... are in wide use are intermediate between the two in the sense that the avalanche zone is well defined having a finite width neither too thin nor too wide The charge is injected from a well defined ... plots of SiC DDR IMPATTs in the Terahertz region, dotted lines are incorporating the series resistance effects 365 366 Silicon Carbide – Materials, Processing and Applications in Electronic Devices ... negative conductance in 4H-SiC based diode icreases the RF power level It is clear from the table 2, that 4H-SiC based 358 Silicon Carbide – Materials, Processing and Applications in Electronic Devices...

Ngày tải lên: 19/06/2014, 11:20

... involve high temperatures as in combustion control in gas turbine engines, where the operating temperatures are around 600C (Vandelli, 2008) and in pressure monitoring during deep well drilling ... of 394 Silicon Carbide Materials, Processing and Applications in Electronic Devices Silicon carbide SiC If the stacking is ABCABC , the purely cubic, i.e., a zinc-blende structure consisting of ... general ndings that all considered polytypes are indirect semiconductors are not surprising, including that the conduction-band minimum is located at X point in the zinc-blende structure or at M in...

Ngày tải lên: 19/06/2014, 11:20

... includes cutting of difficult-to-machine materials, milling and 3-D-shaping, turning, piercing, drilling, polishing etc These operations can be performed just by using plain water jet machining ... an increase in σDC with increasing thickness The inlet plot, showing the infrared spectra of the PI films, allows relating this evolution to the remaining presence after the material processing ... Waterjet machining tolerances, 2011, http://waterjets.org) 437 438 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Machining of carbides by SiC 4.1 Influence of...

Ngày tải lên: 19/06/2014, 11:20

... illustrated in Fig 20 Average width of cut decreases with increase in work feed rate since with the increase in feed rate the Application of Silicon Carbide in Abrasive Water Jet Machining 451 work ... during AWJM using different abrasive materials For all types of abrasives the taper of cut shows an increasing trend with increase in work feed rate With increase in work feed rate the machining ... according to polarity and current flow The illustration is shown in Fig Fig Finding Vgs of Silicon Schottky and Silicon Carbide Schottky diode using voltage differential probe 476 Silicon Carbide...

Ngày tải lên: 19/06/2014, 11:20

... given some influence in improving the circuit’s performance SiS SiCS Fig 20 MOSFET turn-On Power Loss during DUT turn-Off 484 Silicon Carbide – Materials, Processing and Applications in Electronic ... 480 Silicon Carbide – Materials, Processing and Applications in Electronic Devices The load power for the circuits are obtained from calculation: a Silicon Carbide Schottky diode ... diode has shown the ability in operating at higher switching frequency with minimal power loss Fig 21 Graph of Power Loss vs Frequency of Silicon Schottky and Silicon Carbide Schottky Diode Conclusion...

Ngày tải lên: 19/06/2014, 11:20

... (SNMS)” is in use The transformation of raw spectral or image intensities into meaningful concentrations is still challenging 516 Silicon Carbide – Materials, Processing and Applications in Electronic ... Some of the methods for preparing such samples are: Tissue sectioning by a microtome, sample staining, mechanical milling, chemical etching, and ion etching (sputtering) Recently, focussed ion ... synthesis of organosilicon compounds, used them as single-source precursors to obtain silicon nitride films Hence, silicon nitride films were obtained in glow-discharge plasma from HMCTS in mixtures...

Ngày tải lên: 19/06/2014, 11:20

... ordering in amorphous phase is the key point for applications in optoelectronics devices 34 12 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH ... Beijing Institute of Technology 2School of Aerospace, FML, Department of Engineering Mechanics, Tsinghua University, Beijing, China Introduction Excellent physical and chemical properties make silicon ... that explains the considerable effort made in the industrial SiC engineering At a first glad, silicon and carbide are close but a careful inspection reveals different properties leading to brothers...

Ngày tải lên: 26/06/2014, 23:20