si h thin films deposited by pecvd
Báo cáo toán học: " Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering" potx
Ngày tải lên :
20/06/2014, 21:20
... Crystalline ZnS thin films by chemical bath deposition method and its characterization Thin Solid Films 2006, 515:1912-1917 Takata S, Minami T, Miyata T, Nanto H: Growth of hexagonal ZnS thin fims by MOCVD ... properties of ZnS films deposited by close-spaced evaporation Appl Surf Sci 2006, 253:2409-2415 Shao LX, Chang KH, Hwang HL: Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic ... the other films prepared at other growth temperatures; moreover, the average transmittance in the visible region was above 80% The reason for this is that the film was fabricated with a high...
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Báo cáo hóa học: " Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)" docx
Ngày tải lên :
21/06/2014, 17:20
... this work confirm that the voids formed in the Si substrate under the SiC layer cause relaxation of the elastic stress caused by lattice mismatch between the SiC and Si It is shown that the SiC ... graphene We use a similar approach for the estimation of the effect of multiple reflections of the Raman signal on the peak intensity from the thin film using a three-layer model consisting of SiC–air–silicon ... the Si ribs A somewhat similar effect was discussed for porous Si and SiC in Refs [19, 20] For the second mechanism, the enhancement of the Raman signal in thin films, surrounded by media with low...
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characterizations of porous titania thin films produced by
Ngày tải lên :
19/03/2014, 16:47
... 3(a) the maximum height of a ridge/hill is 600 nm This implies the minimum depth of the valley/pit is also 600 nm by considering the surface comprising of the top of the ridges/hills For the samples ... ridge/hill is more for the samples etched in presence of UV light Mathematically the ratio h/ w can increase either with the increase in height or decrease in width of the ridges and in this case h ... etched and UV light etched samples is due to high photoelectrochemical etching rate, which exposes deeper metallic (titanium) layers As a result the ohmic contacts deposited on the surface touch...
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Báo cáo hóa học: " Cohesive strength of nanocrystalline ZnO:Ga thin films deposited at room temperature" pptx
Ngày tải lên :
21/06/2014, 04:20
... ZnO:Ga films deposited by plasmaenhanced chemical vapor deposition Thin Solid Films 2005, 473:35 Minami T: Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced ... observed The spectra reveal a highly textured hexagonal phase with a wurtzite structure A lower Pw resulted in samples with a higher c-lattice parameter In the thin films prepared with a Pw, between ... Pw, using air as a reference The near infra-red transmittance is lower for P w values of 0.41 and 0.53 Pa and increases with higher Pw, which is consistent with the changes observed in the electrical...
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DEFECT INDUCED NOVEL ELECTRICAL, MAGNETIC AND OPTICAL PROPERTIES OF TIO2 THIN FILMS GROWN BY PULSED LASER DEPOSITION
Ngày tải lên :
08/09/2015, 15:20
... and months which taught me a lesson that life doesn’t stand still, nor wait until you are finished Many things have happened and changed in the time in which I have been involved with this project ... I hereby declare that thesis is my original work and it has been written by me in it’s entirety I have duly acknowledged all the sources of information which have been used in the thesis This ... measurements and helped me understand the intricate physics related I would also want to thank Dr S Saha We have been good friends in the few days that we have known each other He has helped me with Raman...
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P type transparent conducting CU AL o thin films prepared by PE MOCVD 2
Ngày tải lên :
16/09/2015, 17:11
... suggested that a higher growth temperature enhanced the growth of the SnO2 phase in the films and improved the crystallinity significantly, thereby increasing the bandgap The increase of bandgap with ... wavelengths The phenomenon that the magnitude of the bandgap shrinkage increased with doping concentration was also observed by other researchers 36 , 37 The shrinkage was explained by the change ... shows the natural logarithm of the growth rate γgrow versus growth temperature With the increase of the growth temperature, the logarithm of growth rate increased linearly This agreed with the...
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P type transparent conducting CU AL o thin films prepared by PE MOCVD 3
Ngày tải lên :
16/09/2015, 17:11
... 0.072nm,16 in which Si4 + is the smallest With a high growth temperature, the silicon ions might diffuse from the substrate to the film to form a thin interface layer In this layer, copper had two different ... peak of Si2 p (99eV) appeared which suggested the existence of Si In the meantime, the peak of copper still had considerable intensity This can be explained by the diffusion The radii of Si4 +, Al3+, ... oxygen flow rate had the highest transmittance while the sample with the highest oxygen flow rate showed the lowest transmittance The film at 20sccm showed the transmittance of 33-71% Similar transmittances...
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P type transparent conducting CU AL o thin films prepared by PE MOCVD 1
Ngày tải lên :
16/09/2015, 17:11
... to the heating region, sublimated by being heated with a halogen lamp and then carried by argon gas to the reactor The heating region is a quartz tube with halogen lamp above The light from the ... thin films 11 Chapter Literature Review Wang Yue Chapter Literature Review The first transparent conducting oxide was reported in 1907 by Badeker.1 He showed that thin films of Cd metal deposited ... of Thesis In this thesis, the fabrication of copper aluminum oxide films prepared by plasmaenhanced metal-organic chemical vapor deposition (PE-MOCVD) and the analysis and discussion on the properties...
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Optical and mechanical properties of cu al o thin films prepared by plasma enhance CVD
Ngày tải lên :
27/11/2015, 12:13
... facilitate the discussion throughout the thesis 2.1 THIN FILM TECHNOLOGY 2.1 Thin Film Technology The term thin film” is used when the thickness of a film is smaller than micron Thin film technology ... example, the mechanical strengths exhibited by some films appear to be about 200 times higher than those of well annealed bulk samples Another example is that very thin (
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Báo cáo " Growth of CdS thin films by chemical bath deposition technique " pptx
Ngày tải lên :
14/03/2014, 13:20
... the following series of chemical reactions: CdSO + NH 4OH ↔ Cd(OH)2 + (NH ) SO Cd(OH)2 + 4NH 4OH ↔ Cd(NH ) 4+ + 2OH − + 4H O S SH | H N − C − H N ↔ H N − C = NH S OH | | − H N − C = H N + OH ... about 698 nm The apparition of this red band may be assigned to the excess of Cd2+ which leads to increase the defect quantity in the films, while the chemical bath deposited CdS thin films reported ... CdSO4 solution for h In this case, the slow deposition rate led to the small uniform grain size and shape and the good adhesion to the substrate On the films deposited in the bath containing 25...
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improved electrochromical properties of sol–gel wo3 thin films by doping
Ngày tải lên :
20/03/2014, 13:04
... the optimum voltage are the same as the amount of corresponding coloring charges which is consistent with the reversibility of electrochromic reaction For the higher voltages, the bleaching charges ... evaluated for the pure WO3 film is 215 s which declined sharply to 26 s for the doped WO3 thin film containing 3.2 mol% Au It has been shown that the addition of gold to the WO3 electrochromic thin film ... showed an increasing behavior with increasing the wavelength and it reached at a constant value for λ > 700 nm This meant that Au–WO3 electrochromic layer with 6.4 mol% Au showed the reddish-brown...
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Báo cáo hóa học: " Direct Synthesis and Characterization of Optically Transparent Conformal Zinc Oxide Nanocrystalline Thin Films by Rapid Thermal Plasma CVD" pptx
Ngày tải lên :
20/06/2014, 22:20
... nanocrystalline thin films which consists of a 13.56-MHz RF generator and a matching network, induction coil, zinc source (nickel heating chamber), and substrate holder (a) The synthesis chamber showing the ... of the slowest crystallographic growth rate, which as indicated by Figure 5, is the (103) plane This is confirmed by Figure which shows the normalized X-ray diffractographs of ZnO films deposited ... IW: Characteristics of high quality ZnO thin films deposited by pulsed laser deposition Appl Phys Lett 1994, 65:2963-2965 44 Narasimha KL, Pai SP, Palkar VR, Pinto R: High quality zinc oxide films...
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Báo cáo hóa học: " Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth" potx
Ngày tải lên :
21/06/2014, 05:20
... (b) the second deposition Besides the growth-induced depth change, modifications in the local morphology inside the pit can also be seen The bottom of the pit turns from smooth to rough Note that ... the hole The cross section plotted in Figure 1b shows that the depth of the pit is 100 nm The full-width-at-half-maximum (FWHM) is 200 nm In Figure 1e is shown the local conductivity map of the ... local morphology As illustrated in Figure 3, the bottom of the pit changes from smooth to rough Furthermore, the increase in the pit depth after the second deposition is smaller than the thickness...
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Fabrication and characterisation of solid phase crystallised plasma deposited silicon thin films on glass for photovoltaic application
Ngày tải lên :
09/09/2015, 11:21
... obtained through the optimization of the gas flow and the power density Chapter highlights the advantages of the integration of poly -Si thin films with another earth abundant material In this Chapter, ... down the cost of this technology by increasing the deposition rate of the PECVD a -Si: H films All these promising features of SPC poly -Si thin films encouraged us to pursue further research on this ... benefit other thin- film technologies and highlights the importance of the integration of poly -Si thin films with earth abundant materials like β-FeSi2 The chapter ends with an overview of the layout...
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tribology of organic self assembled monolayers (SAMs) and thin films on si surface
Ngày tải lên :
14/09/2015, 12:11
... of the present thesis can be summarized as the development of ultra -thin films (SAMs and polymer thin films of composite and hybrid nature) on Si surface (with the aim of low friction and high ... and Sinha 2005] For strong adhesion/attachment of the SAM molecules to the substrate, the head group of the molecular chain should contain a polar end group, which must form chemical bonds with ... test If the strength of the polymer is stronger than the strength of the adhesive forces, true sliding takes place In such sliding process, the frictional energy is dissipated through the shear of...
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Structure and properties of lead zirconate titanate thin films by pulsed laser deposition
Ngày tải lên :
16/09/2015, 08:31
... patterns of the PZT thin films deposited by (a) PLD method and (b) sol-gel method 61 Figure 4.2 Surface SEM images of the PZT thin films deposited by (a) PLD method and (b) sol-gel method; Cross-sectional ... of resistivity for the LSMO thin films deposited on (a) LAO, (b) YBCO/YSZ /Si and (c) YSZ /Si substrates 81 Figure 5.5 Magnetoresistance (MR) vs magnetic field for the LSMO thin films deposited ... customized such that it can hold up to different targets inside the chamber This would enable us to grow different thin film layers without breaking the vacuum by a rotating the holder to the desired...
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Growth and characterization of oxide thin films on silicon by pulsed laser deposition
Ngày tải lên :
07/10/2015, 10:10
... investigate the magnetic properties of these CoFe2O4 films and their relationship with the microstructure Obtain high quality Ba-doped multiferroic BiFeO3 thin films on silicon with the Pt buffer by the ... Lambda Physik Lextra 200) The laser is first focused through a focusing lens outside the vacuum chamber The target holder is customized such that it can hold up to different targets inside the chamber ... Obtain high quality MgO buffer layers on silicon with single orientation by the method of pulsed laser deposition (PLD); investigate the growth mechanism of high quality MgO films on silicon...
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STUDY ON LATTICE AND ELECTRONIC STRUCTURES AT THE SURFACE OF BATIO3 THIN FILMS BY DFT METHOD
Ngày tải lên :
30/10/2015, 19:59
... to this, there are two highly favored mechanisms, i.e the specification of the capping and surface layers in nanosolid which is in accordance with the positive shift of core levels and the surface ... corresponding with the positive shift of the corelevel binding-energy (the positive shift of the DOS core band is corresponding with the negative shift of the core-level binding-energy) Besides, according ... hybrid bands without the shift of the highest peaks no.2c and 3c.The slight shift and enhancement are observed on some weaker peaks The most visible shift (about 0.4 eV - table 3) and enhancement occurs...
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