metal organic chemical vapor deposition

... organometallic chemical vapor deposition (OMCVD), metal- organic vapor phase epitaxy (MOVPE—the name used by one of the most important conferences), organometallic pyrolysis, or metal- alkyl vapor ... weight metal alkyls such as dimethyl cadmium, [DMCd chemical formula: (CH3)2Cd] or trimethyl gallium [TMGa— chemical formula: (CH3)3Ga] as the metal (Group II or Group III) source The non -metal ... or more appropriate reactant chemicals of the same valence in place of the single metal or non metal species Note that Eq allows the use of both hydride and organometallic compounds as sources...

Ngày tải lên: 14/02/2014, 03:20

... In order to obtain the dielectric constant of the silicon nitride gate dielectric film, metal insulator metal capacitors were fabricated separately on ITO-coated Corning glass substrates using ... The source/drain electrodes of TFTs were next realized by the electron-beam evaporation of Ti/Pt/Au (20/30/150 nm) metal layers and the lift-off process The TFT fabrication process was completed ... J Jo, O Seo, H Choi, and B Lee: Appl Phys Express (2008) 041202 25) G B Stringfellow: Organometallic Vapor- Phase Epitaxy: Theory and Practice (Academic Press, New York, 1998) 2nd ed., p 26) C...

Ngày tải lên: 05/03/2014, 21:20

... paper, a nondoped ZnO film and a nitrogen doped one are deposited by plasma-assisted metal- organic chemical vapor deposition (MOCVD) We have investigated their structural and optical qualities and ... bubbler and saturated with DEZn vapor to the reactor N2 was used as the carrier gas The substrate was cleaned in acetone, methanol, deionized water, and then chemical etched in H2SO4 : H3PO4=3 ... whose c-axis length is ( 5.2071 A, 2y=34.428 This can be ascribed to tensile stress induced by the deposition process The o-rocking curves are shown in the inset of Fig It shows that ZnO grows in...

Ngày tải lên: 05/03/2014, 21:20

... the metal- organic precursors will be introduced 2.1 Vertical liquid-delivery metal- organic chemical vapour deposition technique 2.1.1 Principle of the method Metal- organic chemical vapour deposition ... Table 2.1 Typical deposition parameters for deposition of oxide layers in the present work Deposition temperature, °C 600 - 750 Temperature of flash evaporator, °C 230 - 240 Deposition pressure, ... 25 Experimental techniques .28 2.1 Vertical liquid-delivery metal- organic chemical vapour deposition technique 28 2.2 High resolution X-ray diffraction 33 2.3 Auger...

Ngày tải lên: 14/03/2014, 19:20

... desire large scale thin films Various deposition techniques, such as sputtering14, evaporation15,16,17, electrochemical deposition1 8, metal organic chemical vapor deposition (MOCVD)19,20,21 and molecular ... grow continuous Bi2Te3 films on different substrates Films grown by sputtering, evaporation, and electrochemical deposition, offer room temperature (300 K) carrier mobility that are typically at ... and Te precursors respectively, transported and diluted using hydrogen gas A deposition pressure of 350 torr and deposition temperatures between 300°C and 400°C were utilized to achieve heteroepitaxial...

Ngày tải lên: 05/03/2014, 21:20

... SAED pattern; (b) HREM image of a typical SiNW 50 Y.F Zhang et al / Chemical Physics Letters 330 (2000) 48±52 After the deposition, the color of the nanowires changed to black Fig 2a showed ... temperature increased further to 1100°C, 52 Y.F Zhang et al / Chemical Physics Letters 330 (2000) 48±52 Fig (a) TEM image of the nanowires with carbon deposition at 1100°C, and a higher magni®cation image ... Y.F Zhang et al / Chemical Physics Letters 330 (2000) 48±52 Experimental The as-grown Si NWs used in the present experiment...

Ngày tải lên: 16/03/2014, 15:04

... single-crystal SiNWs with well-defined structures at the lower temperature Summary In conclusion, by chemical vapor deposition of silane, the large-scale SiNWs were grown under the catalysis of Fe particles ... deposited into the bottom of the AAO pores using an alternating current (AC) electrodeposition method Electrodeposition was carried out in a ammonium iron (II) sulfate hexahydrate (NH4)2Fe(SO4)2 ... a length 202 C Li et al / Chemical Physics Letters 411 (2005) 198–202 not only have a size-confined effect on the growth of SiNWs, but also facilitate the pyrolysis and deposition of silane on iron...

Ngày tải lên: 16/03/2014, 15:06

... orientations The growth of SiNWs catalyzed by metal particles is usually considered to be a vapor liquid–solid Fig XRD spectrum of SiNWs arrays 546 M Lu et al / Chemical Physics Letters 374 (2003) 542–547 ... temperature, 900 °C Then a flow of SiH4 was introduced at the same rate with H2 (10 ml/min) for h After deposition, the SiH4 and H2 flows were turned off, and the sample was cooled to room temperature in ... analyzer SEM image of SiNWs was obtained as followers: the sample was glued (using epoxy) to a 543 metallic support with the cross-section up and then immersed into M NaOH solution for 20 in order...

Ngày tải lên: 16/03/2014, 15:08

... evolution of Si-NWs on Si substrates grown by nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition (RTCVD) The initial nucleation of the NWs from the Au–Si islands is examined ... into Au–Si droplets will lead to increasing Si chemical potential in the liquid droplets with a relationship of DmSi ¼ kT ln p, where DmSi is Si chemical potential in the liquid droplets and p ... ¼ 1:50) for and then flushed by dry nitrogen The cleaned wafers were transferred into an e-beam evaporator chamber to deposit 1.2–3.0 nm thick Au films with a growth rate of 0.01 nm/s at room temperature...

Ngày tải lên: 16/03/2014, 15:15

Ngày tải lên: 16/03/2014, 15:19

... when they are exposed to ethanol gas Experimental In this work, microwave plasma enhanced chemical vapor deposition (MPECVD) was used to synthesize the carbon nanotubes An iron-containing compound ... have good charge transfer to planar defected graphite, especially in the presence of catalytic metallic particles Carbon nanotubes can become hole-doped in the presence of adsorbed oxygen after...

Ngày tải lên: 20/03/2014, 13:06

... nanotubes array by plasmaenhanced chemical vapor deposition (PECVD) process using electrospun-suspended polymer fiber array as template are reported The morphology and chemical compositions of SiOx ... was 60 W Then, silane gas with the concentration of 2% flowed into the chamber for the coating The deposition pressure was 130 Pa After coating, the aligned core–shell nanofibers were transferred ... Lett (2010) 5:279–285 Hitachi S-4800) and transmission electron microscope (TEM, JEM-2010, 200 kV) Chemical compositions of the nanotubes were detected using an energy-dispersive spectrometer (EDS)...

Ngày tải lên: 22/06/2014, 00:20

... plenty of amorphous carbons Conclusions A temperature window of SWCNTs growth by catalytic chemical vapor deposition of CH4 over Mo-Fe/MgO catalyst has been studied The results suggest that when...

Ngày tải lên: 22/06/2014, 00:20

... pretreatment on the synthesis of MWCNTs on a Ni/TaN/Si substrate by using a microwave plasma chemical vapor deposition (MPCVD) system are investigated The structure and composition of Ni catalyst ... performed at different H2 flow ratios (100, 200, and 300 sccm) in a 915-MHz microwave plasma chemical vapor deposition (MPCVD) system This procedure converted the Ni layer in Ni nanoparticles distributed ... and often proposed that the size and chemical composition of metal nanoparticles determine the diameter and structural nature of the MWCNTs [21] Ni catalyst metal layers transformed into nanoparticles...

Ngày tải lên: 22/06/2014, 01:20

... deposition resulted in large change of the oxygen quantitative component in samples from 7% to 51%; the morphologies of the samples varied from particle-based film to nanorods array, and the chemical ... of the samples prepared under OGC of (a) 0.3% and (b) 0.7% in mixture gases at 400 °C for h of deposition Differences between the two surface structures were distinguishable Generally, low OGC ... OGC, the carbon content inside the sample was higher than that of oxygen Therefore, two possible chemical states might coexist inside the sample One was tungsten oxide together with tungsten carbide...

Ngày tải lên: 22/06/2014, 18:20

... photoluminescence (PL) study on strained Si/Si0.66Ge0.34 CQWs grown by ultra high vacuum chemical vapor deposition (UHV-CVD) The Ge fraction in our SiGe QW samples is about twice the Ge fraction ... 10DI:2H2O2:1NH4OH (by volume), then dipped into dilute HF (DHF) solution comprising 200H2O:1HF for before deposition Figure shows the schematic diagrams of the structures and growth conditions of the three ... single-wafer epitaxy reactor The chamber pressure is below 10–9 Pa The reactant gases used for the deposition are disilane (Si2H6) and germane (GeH4) P-type (boron doped at 2.5 · 1015 cm–3) Si (100)...

Ngày tải lên: 22/06/2014, 22:20

... T. T. Kodas and M. J. Hamton­Smith, The Chemistry of Metal CVD, VCH, New York (1994) M. Konuma, Film Deposition by Plasma Techniques, Springer­Verlag, New York (1992) H. O. Pierson, Handbook of Chemical Vapor Deposition,  Noyes Publications, Park Ridge (1992) ... Surface reaction limited growth in CVD. Adapted from H. O. Pierson, Handbook of Chemical Vapor Deposition,  Noyes Publications, Park Ridge (1992) A deposition limited by mass transport is controlled by the diffusion of reactants through the boundary ... Mass transport limited growth in CVD. Adapted from H. O. Pierson, Handbook of Chemical Vapor Deposition,  Noyes Publications, Park Ridge (1992) Feed rate limits the deposition when nearly all the reactant is consumed in the chamber. The feed...

Ngày tải lên: 17/10/2016, 08:43

... have not been precisely defined; however, each chemical compound should be treated as a potential health hazard From this viewpoint, exposure to these chemicals must be reduced to the lowest possible ... safe handling of the chemicals specified in this method A reference file of material data handling sheets should also be made available to all personnel involved in the chemical analysis Additional ... checked at the volumes employed in the test Ground glass stopper is used to prevent evaporation of extracts 5.2.4 Evaporative flask, Kuderna-Danish—500 mL (Kontes K-570001-0500 or equivalent) Attach...

Ngày tải lên: 14/02/2014, 03:20

... has not been precisely defined; however, each chemical compound should be treated as a potential health hazard From this view point, exposure to these chemicals must be reduced to the lowest possible ... safe handling of the chemicals specified in this method A reference file of material data handling sheets should also be made available to all personnel involved in the chemical analysis Additional ... (Revised, January 1976) “Safety in Academic Chemistry Laboratories,” American Chemical Society Publication, Committee on Chemical Safety, 3rd Edition, 1979 Provost, L.P and Elder, R.S “Interpretation...

Ngày tải lên: 14/02/2014, 03:20

... amounts of chemicals We have extended the application of EESI to instantly follow organic chemical reactions in a straightforward manner, with a rather simple setup Two important chemical reactions ... matrices, EESI-MS is able to track the chemical dynamics of simple reactions (e.g elementary reactions) and complicated chemical reactions (e.g heterogeneous chemical reaction, and reactions involving ... than s) by the analyzed headspace, making this EESI approach a real-time method for monitoring organic chemical reactions As shown in Fig 5, the signal for protonated acetic anhydride (m/z 103) kept...

Ngày tải lên: 14/02/2014, 08:20