low power digital vlsi design circuits and systems pdf

... CMOS VLSI Design A Circuits and Systems Perspective Fourth Edition This page intentionally left blank CMOS VLSI Design A Circuits and Systems Perspective Fourth Edition ... Column Circuitry 510 12.2.4 Multi-Ported SRAM and Register Files 514 12.2.5 Large SRAMs 515 12.2.6 Low- Power SRAMs 517 12.2.7 Area, Delay, and Power of RAMs and Register Files 520 12.3 DRAM ... Custom Design 634 14.3.6 Platform-Based Design System on a Chip 635 14.3.7 Summary 636 14.4 Design Flows 636 14.4.1 Behavioral Synthesis Design Flow...

Ngày tải lên: 30/05/2014, 23:05

... Switzerland a e-mail: marc-alexandre.dubois@csem.ch; claude.muller@csem.ch C.C Enz and A Kaiser (eds.), MEMS-based Circuits and Systems for Wireless Communication, Integrated Circuits and Systems, ... 333, USA e-mail: piazza@ece.cmu.edu C.C Enz and A Kaiser (eds.), MEMS-based Circuits and Systems for Wireless Communication, Integrated Circuits and Systems, DOI 10.1007/978-1-4419-8798-3 2, © ... resonators, to basic circuits such as oscillators and finally complete systems such as ultralow -power MEMS-based radios The work is targeted at circuit and system designers The fabrication process of the...

Ngày tải lên: 30/03/2014, 07:20

... to easy understand the DPA behavior, the following operating regions can be recognized (Raab, 1987) 112 Advanced Microwave Circuits and Systems For low input power level (i.e Low Power Region, ... sample&hold, IEE Proceedings -Circuits, Device and Systems, Vol.143, No.6 Dec 1996 pp.337-342 106 Advanced Microwave Circuits and Systems The Doherty Power Amplifier 107 x The Doherty Power Amplifier Paolo ... Yates, S & Matreci, R (2000) A 20 GHz Doherty power amplifier MMIC with high efficiency and low distortion designed for broad band digital communication systems, IEEE MTT-S International Microwave...

Ngày tải lên: 20/06/2014, 11:20

... include low phase noise and wide bandwidth to support several communication standards of wireless transceiver, and low power design technique to enhance the battery lifetime Recently, the standard ... Advanced Microwave Circuits and Systems Jiang, X., Liu, L., Ortiz, S.C., Bashirullah, R., and Mortazawi, A (2003) A Ka-Band Power Amplifier Based on a Low- Profile Slotted-Waveguide Power- Combining/Dividing ... simulations and another FOM defined as the power – power gain cutoff frequency product has been considered As can be seen in 194 Advanced Microwave Circuits and Systems figures 18 and 19 the best...

Ngày tải lên: 20/06/2014, 11:20

... Aberg, D.;" A low power wide band CMOS VCO for multistandard radios" Radio and Wireless Conference, 2004 IEEE 19-22 Sept 2004 Page(s):79 - 82 212 Advanced Microwave Circuits and Systems [5] Berny, ... on the other hand it is good to dissipate less power as this makes design of the system power budget more relaxed, but on the other hand it should be noted that a high output power and robust circuit ... and quality factor (Q) Implementation of Low Phase Noise Wide-Band VCO with Digital Switching Capacitors 207 2.3.4 Switching capacitor modules We usually use band switching techniques to expand...

Ngày tải lên: 20/06/2014, 11:20

... GHz) Power (mW ) ( NF (real ) − 1) , (3) where Gain stands for insertion gain S21 , BW for amplifier 3-dB bandwidth (in GHz), Power stands for DC power dissipated by the circuit (in milliwatts), and ... Advanced Microwave Circuits and Systems ・ Lower total cost due to reduced costs for procurement, logistics and installation Passive integration technologies can be used in both digital and analog/RF ... RF power amplifier couplers ・ Filters (low pass, high pass and band pass) ・ Functional interposers between ICs and the primary interconnect substrate ・ Multi-band transceivers 1.3 General Design...

Ngày tải lên: 20/06/2014, 11:20

... hybrids (Q) and one power divider (D) 348 Advanced Microwave Circuits and Systems The device is constructed using a seven-port network and includes five 3-dB couplers (Q) and one power divider ... whilst isolation between ports and 4, and and is greater than 19 dB in the 3.1 to 10.6 GHz frequency band In the same band, the coupling between ports and and and is dB with a ±1 dB deviation ... at Port and the simulated and measured transmission coefficients between port and Port and Similarly, Fig 11 presents the simulated and measured return loss at Port and the simulated and measured...

Ngày tải lên: 20/06/2014, 11:20

... required analog circuits including the front-end, the sensor and a low power ADC References Bechen, B (2008) “Systematischer Entwurf analoger Low- Power Schaltugnen in CMOS anhand einer kapazitiven ... Microwave Circuits and Systems complex reflection coefficient as defined in (6) due to open, short and load conditions for  and  The incident and backscatter waves are in negative and positive ... and a higher 418 Advanced Microwave Circuits and Systems Fig 10 Equivalent Circuit of a Transponder maximum possible distance between reader and transponder It can be calculated with the following...

Ngày tải lên: 20/06/2014, 11:20

... Advanced Microwave Circuits and Systems temperatures and using less power in the lower bands rather than microwave band The complex dielectric constant of one kind of rice weevils and a kind of wheat ... property mentioned earlier 454 Advanced Microwave Circuits and Systems References Andersen J.B and Vaughan R.G (2003) Transmitting, receiving and Scattering Properties of Antennas, IEEE Antennas ... C.A (1982) Antenna Theory Analysis and Design, Harper and Row Bancroft R (2004) Microstrip and Printed Antenna Design, Noble Publishing Corporation Brunfeldt D.R and Mukherjee S (1991) A Novel Technique...

Ngày tải lên: 20/06/2014, 11:20

... 484 Advanced Microwave Circuits and Systems exciting monopole antenna is positioned at the top of the silo’s lid below the microwave source (a) (b) Fig 11 Design and simulation of the silo ... Bigelow, T S.; (2001) ”Microwave and Millimeter method and apparatus for controlling insects in stored products”, US Patent No.: 6,192,598 B1, 27 Feb 2001 490 Advanced Microwave Circuits and Systems ... (Lagunas-Solar, 2006), at UC Davis, has used lower bands of the RF spectrum (few kHz to < 10 MHz) to disinfest the soil from pests New RF systems has been designed and engineered based upon solid state...

Ngày tải lên: 20/06/2014, 11:20

... IMPATT devices are used in microwave and MM-wave digital and analog communication systems, high power RADARs, missile seekers, and in many other defence systems In recent years, the development ... doping profile and field profile Fig (b): The schematic diode structure, doping profile and typical field profile of (i) HighLow DDR and (ii) Low- High -Low DDR IMPATT diodes Wide Band Gap Semiconductor ... device design and materials research Moreover, computer studies are essential for understanding the 120 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems...

Ngày tải lên: 21/06/2014, 06:20

... in-band and out-ofband performance For example, for the GSM 900 standard, these bands are defined by the following frequency ranges for the mobile station: In-band: 915 MHz -980 MHz and Out-ofband: ... rejection and ripple in the band Fig 10 Ladder and lattice topologies and filter’s response 164 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems ... whole ISM band from 2.4 to 2.48 GHz, with 3dB insertion loss and 40 dB out-of-band and image 172 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems...

Ngày tải lên: 21/06/2014, 06:20

... sin (2b) (2c) Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 194 In equations (2), E ax and E ay represent the x- and y-component of the reflected ...   (9) Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 196 Based on the equations (8) and (9), far fields of E  S and E S are calculated, where ... obtain E- and H-planes Half -Power beamwidths (HPE and HPH) The principal E- and H-plane radiation patterns can be calculated by substituting    and   , respectively According to [Stutzman and...

Ngày tải lên: 21/06/2014, 06:20

... inductance and shunt capacitance cannot be avoided in nature It consists of series resonators LR and CL and shunt resonators CR and LL, where the subscript “L” and “R” denote left-handed and righthanded, ... line is perfect at the low frequency right-handed pass-band Thus, we use the right-handed pass-band of the D-CRLH transmission line for power divider design, in which a wideband fourth order Chebyshev ... combination of left-handed and right-handed transmission line At low frequency, CL and LL are dominant, the transmission line shows left-handed characteristics; at high frequency, LR and CR are dominant,...

Ngày tải lên: 21/06/2014, 06:20

... three passbands are set as 2, and GHz The bandwidths of the first, second and third passband are chosen as 200, 300 and 200 MHz, respectively, which are 10%, 15% and 10% of the first passband’s central ... Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems (c) Responses of the theoretical prediction and measurement Fig Three-ordered 2/5.3 GHz dual-passband bandpass ... Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems (c) Responses of the theoretical prediction and measurement Fig 10 Three-ordered 2/5/8 GHz triple-passband bandpass...

Ngày tải lên: 21/06/2014, 06:20

... been derived and/ or developed for circular and 404 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems rectangular antenna apertures and for all the ... Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems where the Corrective Term can be found either from plots in Figures and or from formulae in Tables and and the ... (28) and Tables and is defined by (23) and variables c and b in Tables and are defined by (16) and (17) In addition, the calculation errors of the extended source correction factor with and without...

Ngày tải lên: 21/06/2014, 06:20

... to the availability of low- cost narrowband RF and IF components with low power consumption Furthermore, this architecture can ensure good levels of sensitive (allows lower power signal at receiver ... Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems some considerations about the implementation of adaptable wideband architectures and multi-standard operation ... them) and converted to the digital domain using a straightforward analogue-to -digital converter 498 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems...

Ngày tải lên: 21/06/2014, 06:20

... IEEE Transactions on Circuits and Systems – II: Analog and Digital Signal Processing, Vol 44, No 6, June 1997, pp 428-435, ISSN 1057-7130 Razavi, B (1998) Architectures and Circuits for RF CMOS ... a wide sector and selected cells Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 544 Then, the beam scanning allows selecting a power backscattered ... Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems Pedro, J.C & Carvalho, N.B (2003) Intermodulation Distortion in Microwave and Wireless Circuits, Artech...

Ngày tải lên: 21/06/2014, 06:20

... K (sea) and < K (land) 566 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems The other two cases show a comparison between the 183-WSL and retrievals ... Chartreuse green and lime-green are flags for snowfall, dry snow cover and wet snow cover, respectively; red and yellow dots refer to convective and stratiform precipitation; blue and cyan represent ... Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems also distinguishes between wet and dry snow, has significantly reduced the number of misclassifications and gave...

Ngày tải lên: 21/06/2014, 06:20

... 100 and 120 ns, pulse repetition frequency 100 and 800 Hz, pulse repetition interval, 1.25 and 10 ms, power 0.34 and 0.60 mW, EF strength 1.25 and 1.64 V/m, MF strength 3.3x10-3A/m (41.4 Oe) and ... applying, i.e ELF of 0.1-217 Hz, and 100 and 800 Hz modulating MW carrier and, MW of 9.6 and 13.6 GHz, of low power (SAR induced on biological samples of 4.00 x 10-1 mW/Kg and 2.02x10-3 W/Kg respectively), ... polarized along Oz axis (Figs and 9) and is homogeneous within the cavity height Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 596 (a) (b) Fig (a)...

Ngày tải lên: 21/06/2014, 06:20