initiation of thin film rupture

... not have been possible without the development of new thin film deposition processes, improved film characteristics and superior film qualities Thin film deposition technology is still undergoing ... crucial importance of deposition technology is the fabrication of semiconductor devices, an industry that is totally dependent on the formation of thin solid films of a variety of materials by deposition ... as resputtering of loosely-bonded film material, low-energy ion implantation, desorption of gases, conformal coverage of contoured surface, or modification of a large number of film properties...

Ngày tải lên: 28/04/2014, 10:53

... Investigation of doped film uniformity 42 3.2.2 Effect of film thickness on crystallinity and electrical properties 45 3.2.3 Effect of film thickness on optical properties 51 3.2.4 Effect of ... properties of the c-Si wafer and of the a-Si and µc-Si thin- film layers, based on [127] as well as on the fitting of the lifetime samples of Figure 4.4 The activation energy (i.e position of the ... doping gas concentration on film conductivity and crystallinity 53 3.3 Integration of doped thin- film layers in device precursors 60 3.3.1 Investigation of doped film on intrinsic a-Si:H substrates...

Ngày tải lên: 09/09/2015, 11:15

... FABRICATION OF THIN FILM COMPOSITE (TFC) MEMBRANES FOR ENGINEERED OSMOSIS PROCESSES HAN GANG (B.Sci.(Hons.),Dalian University of Technology, China) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... other; the production of clean water is an energy-intensive process, while power generation often requires a large amount of water Therefore, one of the most crucial challenges of the 21st century ... because of the solvent chemical gradient The osmotic pressure of a solution can be calculated via van’t Hoff equation as:   icRT (2.1) where i is the van’t Hoff factor, c is the concentration of...

Ngày tải lên: 10/09/2015, 09:02

... community; they are also of practical importance in predicting physical failures of systems containing these thin films 1.1 Thin Film Yield Strength The dependence of yield strength on film thickness is ... behaviour of a composite material (Cleveringa et al., 1997), and the emergence of size effects in the wedge indentation of thin films (Balint et al., 2006a) The various aspects of thin film mechanical ... 64 4.4 DD Model for Thin Film Yield Strength 49 Concluding Remark 70 Thickness-Dependence of Thin Film Interfacial Fracture Toughness 71 5.1 DD Model for Thin Film Interfacial Fracture...

Ngày tải lên: 11/09/2015, 21:37

... spectrum of WO3 films, deposited on 300 nm and 350 nm ITO layers and WO3 powder sample From XRD spectra of WO3 / ITO 300 nm film intensity of peak (001) exceeds intensity of peak (200) And WO3 film, ... grain size of WO3 film were determined by Scherrer equation and all of them valued in 30 nm to 35 nm 3.2 Micro – Raman Studies Due to structural modifications of WO3 films, deposited on of ITO layers ... heteroepitaxial growth of films WO3 in which the parameters of plane ITO (440) are slightly larger than the ones of WO3 planes The relation between shifts of XRD peaks and total film stress is given...

Ngày tải lên: 13/02/2014, 03:20

... thickness of the thin films was about 70 nm The gas sensitivity of the thin film with Ag electrode was almost the same as that with Au electrode However, Au electrode was easily torn from thin film ... 1.4 1.1 phase of the thin film fired at 4508C were compared with those at 5008C Both thin films consisted of only anatase phase and showed almost the same XRD profiles, grain size of TiO and pore ... , the resistance of the TiO –Pt film was compared with that of the TiO film Although the resistance of 1H is smaller than that of 2H, the resistance of 1a is larger than that of 2a It turns out...

Ngày tải lên: 19/03/2014, 16:48

... vibration of O H on the surface of TiO2 [14] 3.2 UV–vis absorption spectra of PANI and PANI/TiO2 nanocomposite thin films Fig depicts the UV–vis absorption spectra of PANI and PANI/TiO2 thin films ... the response of the sensor to NH3 decreased by a factor of 2–3 during 30 days Therefore, the lack of long-term stability of the fabricated sensor was of concern The resistance changes of the sensors ... is the resistance of sensor in air and Rgas is the steady resistance of sensor in the presence of a tested gas The response values of all the samples are plotted as a function of NH3 concentration...

Ngày tải lên: 20/03/2014, 13:04

... presence of two free close sites is necessary so that the reaction of adsorption occurs, conversely, the reaction of desorption requires the presence of two close atoms The relation of balance ... easier than that of oxygen, one must think that when equilibrium is established, the atoms of oxygen resulting from the dissociation of oxygen have been replaced by other atoms of oxygen resulting ... transfer, the electrons of the atom or the molecule remain located in the vicinity of the adsorbate involving a simple deformation of the orbitals The binding energy of the adsorbate is Ew and...

Ngày tải lên: 20/03/2014, 13:04

... Measurement of film thickness Table shows the measured thickness of the WO3 thin films Two basic tendencies in the thickness as a function of Table Thickness (nm) of the WO3 thin film as a function of the ... in the presence of 10 ppm of ammonia as a function of the working temperature and number of interruptions of the deposition process Number of interruptions Fig Sensor response of rf sputtered ... total thickness of WO3 thin films decreases when the number of interruptions during the deposition process increases Fig shows AUG depth profiles of chemical elements into the WO3 thin films It can...

Ngày tải lên: 20/03/2014, 13:05

... NO2 sensitivity of WO3 thin film gas sensors Part Thin film devices, sensors and actuators, Thin Solid Films 287 (1996) 258–265 [7] V Demarne, A Grisel, An integrated low-power thin film CO gas ... structure of film is likely to facilitate the adsorption process of NO2 molecules because of the capillary pore and large surface area This implies the conclusion that this type of film will offer ... used to prepare thin films on Al2 O3 substrate that was coated with Pt electrode by dip coating The thin films can be dried within several hours at 60 ◦ C The as-made bulk samples or thin films were...

Ngày tải lên: 20/03/2014, 13:07

... Morphology of WO3 thin films Thin films of WO3 could be derived from the WO3 ·2H2 O sol added with PEG (2 wt.%) by one time spin coating and calcination at 300 ◦ C for h Fig shows SEM images of the thin ... films were an irregular packing of square plates of WO3 , 0.5–1 ␮m in width and 0.2–0.5 ␮m in thickness Each square plate was a stack of thin plates (lamellae) of less than 100 nm in thickness ... the crystals of WO3 ·2H2 O and that of WO3 : The basal plane (0 0) of WO3 ·2H2 O is converted into the basal plane (0 2) of WO3 [12] As shown by the cross-sectional view Fig 1c, the thin films were...

Ngày tải lên: 20/03/2014, 13:11

... conditions (e.g the angle of polarization mirrors and modulators) and parameters of film (∆, Ψ) The measurement configuration is chosen for the purpose of simplifying the calculation of trigonometry functions ... region of the substrate This means, the glass substrate did not affect to the shape of transmission spectrum of coated ZnO film From this spectrum one can also determine the optical band gap (Eg) of ... gave the dependence of refractive index n and extinction coefficient k on wavelength of ZnO film, illustrated in Fig 10 The ZnO film refractive indices in the wavelength range of 500 nm – 1100 nm...

Ngày tải lên: 28/03/2014, 13:20

... the IZO thin film Some papers about IZO thin films deposited by sputtering w11x, PLD w13x and MOCVD w14x also reported dominance of the (222) orientation Fig 1b shows the change of XRD profiles ... the small height of the peak seems to be that the IZO thin film was as thin as mm, whereas the thickness of the wafer was as large as 450 mm The change of surface roughness of IZO samples deposited ... 150–160 8C, but the crystallization of ITO thin films needed the temperature of 180–190 8C, which was approximately 30 8C higher than that for pure In2O3 amorphous thin films w17x They assumed that...

Ngày tải lên: 24/05/2014, 13:53

... definition of the quantum yield as follows: # of emitted photons , (3) Φ≡ # of absorbed photons the number of emitted photons indicates the multiplication of the quantum yield and the number of photons ... study suggests a new approach capable of evaluating a small quantity of Aβ peptide using a simple, thin- film field-effect transistor and shows the results of the photocurrents resulted from a ... mainly consists of an upper biofluidic part where the cultured cells are introduced on top of the optical filter through a polydimethylsiloxane [PDMS] channel and an underlying thin film p-FET as...

Ngày tải lên: 20/06/2014, 20:20

... silicon [15] Figure 3b shows Figure Spatial profile of the half-coated sample before and after irradiation (a) Spatial profile of the XPS core level spectra of Au-4f and Si-2p before Ar+ 200 eV irradiation ... http://www.nanoscalereslett.com/content/6/1/403 Figure Magnified SEM image of Silicon nanodots after the removal of the gold film Image was taken after a fluence of × 1017 cm-2 after irradiation with 200 eV of Ar ions the in situ XPS data ... of erosion of the gold film, the second stage follows with the formation of gold silicides as indicated by the XPS data It is well-known that gold silicide formation dominates at the bottom of...

Ngày tải lên: 21/06/2014, 03:20

... because of the exciton Bohr radius of 46 nm in PbSe [13] Figure depicts optical absorption spectra for the PbSe-ZnSe composite thin films For comparison, the spectrum of a pure ZnSe thin film is ... http://www.nanoscalereslett.com/content/6/1/324 Page of Figure Direct observation of PbSe-ZnSe composite thin film containing mol% PbSe (a) Bright-field TEM image (b) Bright-field image of STEM mode (c) Elemental mapping of Zn (red), ... exceeding mol% The solubility range of Pb in ZnSe is therefore Figure XRD pattern of the PbSe-ZnSe composite thin films Dots indicate PbSe and circles indicate ZnSe Page of found to be quite narrow,...

Ngày tải lên: 21/06/2014, 04:20

... potential of sensitizing of Si-np The increase of the PL intensity of Nd 3+ is then explained by the increase of the Si-np density as well as the increase of non-radiative de-excitation channels of ... for the PL of Si-np Figure shows the behavior of the PL spectra of the thin films annealed at 1100 °C as a function of the Nd concentration As the Nd content increases from 0.08 to Page of 0.27 ... effect of Si-np towards Nd3+ ions The evolution of the integrated PL intensity of the Sinp PL band and the 920-nm PL peak is shown in the inset of Figure The enhancement of the PL intensity of the...

Ngày tải lên: 21/06/2014, 05:20

... this allows a substantial simplification of the equations describing the flow of the thin paint film 2.1 Physical model Here, we consider the leveling of a thin incompressible film deposited on an ... Fourier transform of a product of functions in physical space is the convolution of the Fourier transforms of the functions Numerically, care has to be taken when the Fourier transform of the product ... Piezanowski Rheology of thin films from flow observations In preparation 12 D.J Benney Long waves on liquid films J.Math.Phys., 45:150 – 155, 1966 13 V.Y Shkadov Wave flow regimes of a thin layer of viscous...

Ngày tải lên: 21/06/2014, 17:20

... images of the ZnO films with three growth angles Film thickness is of the same value (100 nm) Figure 2a-1 shows the crosssection view of the 0° growth-angled columnar ZnO film Columnar ZnO films ... of electrodeposited ZnO thin films Thin Solid Films 2008, 516:3893-3898 Bragg WL, Bragg WH: The Crystalline State New York: McMillan; 1933 15 30 o Growth angle ( ) Figure Reflectance of ZnO films ... Columnar ZnO films with angles of 15° and 30° are shown in Figure 2b-1, c-1 To get a magnified view of the cross-section of the films, we enlarged the boxed section of the films, as shown in Figure...

Ngày tải lên: 21/06/2014, 17:20