infiltrated silicon carbide ceramic matrix composites stress rupture and stress relaxation behavior in air at 1000°c
Silicon carbide nanowires synthesized with phenolic resin and silicon powders
Ngày tải lên :
16/03/2014, 15:20
... nanochains and the matrix Thus, the unusual morphology of spindle SiC nanochains may endow them with an excellent reinforcing effect By simply laying the spindle SiC nanochains on a at metal ... bright spots and streaks, indicating that defects exist in the knot area (4) Spindle SiC nanochains: this type of SiC nanowires also has a uniform periodic structure As is indicated by (3) in Fig 3b, ... using standard Cu Ka radiation A Hitachi S-3000N SEM operated at an accelerating voltage of 10 KV was employed to investigate the morphology of the products Further structure characterization and...
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Báo cáo hóa học: " Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix" doc
Ngày tải lên :
21/06/2014, 05:20
... RTA and furnace annealing samples are calculated by this formula and are indicated and compared in Figure In both RTA and furnace annealing samples, we can see that when Si concentration increases, ... SiC film, indicating that SiC film does not crystallize under 1,100°C annealing condition itself due to insufficient kinetic energy [13] That both Si and SiC-NC appear in silicon- rich carbide samples ... by calculating the intensity ratio of the crystalline Si peak and amorphous Si peak: IC-Si/Ia-Si [6] Figure 10 shows the relation of Si peak intensity ratio and silicon concentration in the SRC...
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carbon nanotube array thermal interfaces for high temperature silicon carbide devices
Ngày tải lên :
06/05/2014, 08:53
... 16] and metal foils [17], and other existing thermal interface materials EXPERIMENTAL METHODS Sample Fabrication An inter-dendritic catalyst templating scheme involving Fe3þ ions and an amineterminated ... reordering presumably created more intimate contact between the MWCNT free ends and the Ag, causing slightly enhanced heat transfer, and such diffusion coating of CNTs at moderate temperatures ... boundary scattering, which would tend to increase interface resistance for most materials [27, 28] Above 100 C as temperature increases, a decreasing trend in resistance is observed Upon attaining...
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probing the nature of annealing silicon carbide samples
Ngày tải lên :
06/05/2014, 09:02
... reduction in resulting peaks intensity that in addition to restoring Si and CNT, indicates rapid weakening in formation of Si, silicon carbide is also restored (Figure 2), But CNT due to the Sintering ... Mixture B - Sintered: reduced which means that according to Debye By sintering Si and C, and by placing the - Scherrer equation, particle size has increased sample at 1200 °C for minutes, we’ll ... and SiC formation By burning the sample for hours at 700° C, has increased In conclusion, by burning the we’ll realize that the CNT phase is removed sample, we’ll understand that Si and SiC and...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 1 docx
Ngày tải lên :
19/06/2014, 11:20
... Engineering Mechanics, Tsinghua University, Beijing, China Introduction Excellent physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including ... irradiation are of importance in nuclear applications In such irradiations the most dramatic material and microstructural changes occur during irradiation at low temperatures Specifically, at temperatures ... indicators of a-SiC with varying χ The number of four-fold coordinated C and Si atoms declines with increasing χ especially for the case of Si atom, which is in accordance with the argument in...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 2 pot
Ngày tải lên :
19/06/2014, 11:20
... with single 4-rings or 6-2 rings (b) ATO with single 4- or 6-rings (c) AFI with single 4- or 6-rings (d) VFI with single 6-rings (e) ATV with single 4-rings (f) LTA with double 4-rings, (single ... eV/atom in the ordered phase (Martins and Zunger, 1986) as mentioned above, and a strain enthalpy ΔHsize Indeed, the large atomic size difference introduces a microscopic strain by incorporating ... basic "silicon" technology This limits the integration of optoelectronic devices in complex chips MQWS SiC based materials are under consideration keeping at mind that the stacking (a combination...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 3 pdf
Ngày tải lên :
19/06/2014, 11:20
... the substrate It is assumed that, after annealing at 800ºC (Figs 11b and 12) approximately k800 ≈ [Iint(800ºС)/Iint(20ºС)]×100% = 72% of silicon atoms in the layer is incorporated into crystallites ... 2010) Photoluminescence spectrum from the front surface of the nanocrystalline film 70 Silicon Carbide – Materials, Processing and Applications in Electronic Devices containing cubic 3C and rhombohedral ... obtained by multiple ion implantation of C in Si and selective oxidation of the top layer of Si (Serre et al., 1999) High-dose carbon implantation into silicon in combination with subsequent or in...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 4 docx
Ngày tải lên :
19/06/2014, 11:20
... ordering of the layer 96 Silicon Carbide – Materials, Processing and Applications in Electronic Devices and the formation of optically active Si−C-bonds A certain increase in the amplitude at 800 ... Liangdeng, Y., Intarasiri, S., Kamwanna, T., Singkarat, S (2008) Ion beam synthesis and modification of silicon carbide In book “Ion beam applications in surface and bulk modification of insulators” ... mitigate the increasing demanding of heat removal in energy-related industrial applications have been composite materials made out of a proper combination of a metal and SiC particles Al/SiC composites...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 5 pot
Ngày tải lên :
19/06/2014, 11:20
... alloy using drainage curves obtained during gas pressure infiltration at 750ºC 134 Silicon Carbide – Materials, Processing and Applications in Electronic Devices With relatively fast pressurization ... longitudinal coordinate is the intensity ratio According to the intensity ratio, the scanning scope can be divided into three regions In region A, the intensity ratio is much greater than 144 Silicon ... of the materials For this purpose, a certain minimum pressure that ensures complete saturation is needed along with a certain pressurization rate in order to force that infiltration and reactivity...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 6 docx
Ngày tải lên :
19/06/2014, 11:20
... TO and D band intensity after a thermal treatment at 1600°C is shown in d) and e) Because of their interesting thermal and mechanical properties, SiC composites (SiC fibres + SiC matrix) find ... (1997) The corrosion of ceramic- matrix composites, Mater Sci Forum, 251254, 833-844 Colomban, Ph., (2002) Analysis of Stress and Strain in Ceramic, Polymer and Metal Matrix Composites by Raman Spectroscopy, ... the matrix net-shape sintering in 3D reinforced ceramic matrix composites, J Eur Ceramic Soc., 17 [12], 1475-1483 Colomban, Ph (2005) Nano/micro-structure and Property Control of Single and Multiphase...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 7 docx
Ngày tải lên :
19/06/2014, 11:20
... (c) at 11100C and (d) at 11500C 220 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 13 (a) Plots of face terminated dry oxidation growth rate at 10000C, (b) at ... Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 11 Determination of growth rate multiplication factor between both terminating faces by the method of wet and dry ... terminated growth rate, revealing that the average growth rates of dry and wet oxide on Si-face is slower than that of C-face Fig 14 Plots of oxidizing ambient terminated growth rate in wet oxidation...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 8 pptx
Ngày tải lên :
19/06/2014, 11:20
... treating long range interactions in ab initio and force-field-based calculations in clusters, J Chem Phys 110: 2810–2821 Tuckerman, M E & Parrinello, M (1994) Integrating the car-parrinello equations ... (2004) Silicon Carbide: Fundamental Questions and Applications to current device technology, Springer-Verlag, Berlin, Germany 256 26 Silicon Carbide – Materials, Processing and Applications in Electronic ... 18 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH Fig Snapshot of the SiC-2×2 surface Pink and grey spheres represent carbon and silicon atoms,...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 9 pot
Ngày tải lên :
19/06/2014, 11:20
... spectroscopically and in images Mineral candidates determined by spectral matching can then be input into numerical RT models; examples of Optical Properties and Applications of Silicon Carbide in Astrophysics ... which attenuates rapidly within two Introducing Ohmic Contacts into Silicon Carbide Technology 297 surface layers Lastly, we also calculated the surface energies of the remaining terminations in ... to the interface maintain the stacking 299 Introducing Ohmic Contacts into Silicon Carbide Technology seen in Fig 15(a), thus matching the HAADF image geometrically Quantitatively, the d1 and d2...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 10 pdf
Ngày tải lên :
19/06/2014, 11:20
... of oxygen and humidity in the surrounding atmosphere For example, in unlubricated sliding, wear resistance of SiC ceramics can be greater in air than in inert atmosphere owing to thin soft oxide ... HPHT sintering: – loading, – sintering, – unloading 314 Silicon Carbide – Materials, Processing and Applications in Electronic Devices 2.2 Samples preparation Powders used for the preparation ... at 1400°C is obtained in nano -composites having ultra-fine SiC particles added into the Si3N4 matrix This improvement was mainly attributed to the suppression of a grain boundary sliding by intergranular...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 11 doc
Ngày tải lên :
19/06/2014, 11:20
... 340 Silicon Carbide – Materials, Processing and Applications in Electronic Devices To understand the operation and performance of IMPATT devices and oscillators knowledge of the basic IMPATT ... shown in Table In figures 10(a-c), plots of E(x) and P(x) profiles of DDR SiC based unilluminated and illuminated (TM and FC configuration) IMPATTs are presented It is intersting to note that there ... effects 365 366 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 13 Effect of photo-illumination on FC and TM illumination configuration of SiC (3C, 4H and 6H type)...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 12 docx
Ngày tải lên :
19/06/2014, 11:20
... band summations in Eq.(7) involve all states in the valence band and lowest states in the conduction band The summations in Eq.(7) are over special points in the Brillouin zone In our calculations, ... are indirect semiconductors are not surprising, including that the conduction-band minimum is located at X point in the zinc-blende structure or at M in the hexagonal BZ of 2H Diamond and silicon ... the bonding and antibonding combinations of the C 2s orbital and a Si 3p orbital, of which the state mainly consists, can interact with more closer lying states The minimum at K point, that has...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 13 potx
Ngày tải lên :
19/06/2014, 11:20
... described then Insulating passivation, encapsulation and substrate, involving polymeric or ceramic materials, are the main insulating functions to be satisfied by the device packaging Besides the ... encapsulation and substrate are the three main insulating functions to be satisfied by the device packaging, involving organic and ceramic materials Besides their electrical role, the involved materials ... 410 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Needs, insulation problematic and constraints The “high temperature” range and the applicative needs...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 14 doc
Ngày tải lên :
19/06/2014, 11:20
... stimulation by particles of hydroxyapatite, silicon carbide, and 468 Silicon Carbide – Materials, Processing and Applications in Electronic Devices diamond: in vitro studies of new prosthesis coatings ... analysis in abrasive water jet cutting of ceramic plates Journal of Materials Processing Technology, Vol 40, pp 287-304, ISSN 0924-0136 452 Silicon Carbide – Materials, Processing and Applications in ... filler and matrix materials so far in the literature regarding economical and functional benefits to both consumers and industrial manufacturers (Budinski, 1997; Chand et al., 2000; Tripathy and...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 15 doc
Ngày tải lên :
19/06/2014, 11:20
... The results indicate that the initial composition of the gas mixture, the nature of the activation gas, and substrate temperature play a key role in determining the deposition kinetics and the physicochemical ... dominate over the respective N–C and Si–O bonds, preferred in a pure N2 discharge, and the film hardness increases up to 40 GPa 490 Silicon Carbide – Materials, Processing and Applications in ... between nm and nm for an area of 5µm×5µm Wear tests at 600°C showed that the coatings posses an excellent hightemperature stability 500 Silicon Carbide – Materials, Processing and Applications in Electronic...
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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 16 doc
Ngày tải lên :
19/06/2014, 11:20
... TEM/EELS and 29Si magic-angle spinning NMR (29Si MAS-NMR) The main bonds are Si–C, Si–N, and C–C in these films It was demonstrated that silicon carbonitride coatings obtained at high temperatures ... systematic examination of BCN products can be observed from the literature For chemical bonding determination mainly XPS and NEXAFS (also FTIR) are 524 Silicon Carbide – Materials, Processing and ... Si/C area ratios in nitrogen– argon mixtures (Vlcek et al., 2002) As a result, the N–Si and Si–N bonds dominate over the 520 Silicon Carbide – Materials, Processing and Applications in Electronic...
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