high resolution thin film device to sense texture by touch 1501

... atoms are excited into oscillation by the RF field, quickly gaining enough kinetic energy to cause ionization and forming a plasma Positive ions from the plasma are pushed out of the source by ... electrodes are connected to RF oscillator coils which generate an AC voltage which is transferred to the rectifier stack by means of capacitative coupling Fig 3.4 The high voltage power supply ... selected by the magnet to pass into the stabilizer slit at the analyzer table (Fig 3.5(b)) The currents created by the beam hitting on the left and the right of the stabilizer slit are monitored,...

Ngày tải lên: 14/09/2015, 08:44

... of the channels within each plate stack are angled relative to each other This is to ensure that the acceleration of gas ions produced within the bottom plate will be either stopped or interrupted ... are monitored by an interlocks program, which is accessible from the control panel An alarm will sound whenever the interlocks is triggered, and an emergency stop button allows for automatic ... V1 and V3 are closed V4 is then opened to allow N2 to flood the load lock back to atmospheric pressure, after which the load lock chamber can be opened to remove the sample 3.4.2 Goniometer A...

Ngày tải lên: 14/09/2015, 08:44

... Pxt , Pyt ) Top trajectory Top envelope P0 ( Px, Py ) Central trajectory Pb ( Pxb , Pyb ) Bottom envelope Bottom trajectory Fig 4.8 Schematic of translations of central trajectory due to slanted ... Pb ( Pxb , Pyb ) of the top and bottom envelopes with the entrance edge Trajectories within magnet Circles are drawn within the magnet as trajectories for the top and bottom envelopes so that each ... tangent at point P0 ( Px, Py ) at the topmost point of the circle The central trajectory is then separately shifted to form the top (violet) and bottom (green) trajectories such that their uppermost...

Ngày tải lên: 14/09/2015, 08:44

... section 2.3.2 Thin film systems For thin films deposited on thick substrates, we are mainly interested in the stoichiometry and depth profile of heavy elements within the thin oxide films at the ... Generating Voltmeter High- k High- Dielectric constant HRBS High- Resolution Backscattering Spectrometry HVE High Voltage Engineering HVEE High Voltage Engineering Europa Lab Laboratory MCA Multi-Channel ... spectrum have high energy edges at K A E0 and K B E0 respectively, with the substrate signal S pushed back to lower energy by ∆ E S , due to the ions losing energy within the thin film The signal...

Ngày tải lên: 14/09/2015, 08:44

... photoelecton peak of O 1s is found to lie at 530.2 eV, and is assigned to lattice oxygen in the WO3 crystal As shown in Fig 2(c), the photoelectron peaks of W 4f5/2 and W 4f7/2 are found to lie ... precursor The WO3 thin film sensor provides a high sensitivity, excellent selectivity and quick response behavior at 70◦ C to TMA These results indicate that the WO3 thin film sensor prepared by the sol–gel ... the WO3 thin film sensor to 500 ppm TMA at 70◦ C References method has a high sensitivity and selectivity to TMA at 70◦ C Fig shows the typical gas response characteristic of the WO3 thin film...

Ngày tải lên: 20/03/2014, 13:12

... (reads that align to the forward strand) and reverse reads (reads that align to the reverse strand) To identify enriched regions, we divide the genome into nonoverlapping bins into which reads are ... negligible Performance To test CSDeconv, we applied it to novel ChIP-seq data for the DosR transcription factor in MTB and to existing data for the GABP transcription factor in humans http://genomebiology.com/2009/10/12/R142 ... simplified CSDeconv fails to call binding sites that are called by CSDeconv These cases are supported by read enrichment, and slight modifications to the motif are usually enough to allow a match at...

Ngày tải lên: 09/08/2014, 20:21

... will cause the Q output to go high and the PWM pulse to start As the output goes high, the AND gate U3 combines this output signal with a high- speed clock which is fed into the NCO clock pin via ... frequencies have to be fairly high, and having as much PWM resolution as possible at these frequencies is necessary, the NCO can be used in conjunction with the CLC to create a very high resolution ... improve the resolution by decreasing the NCO input clock frequency Reducing this clock to MHz will have the result shown below (Figure 7) DS01476A-page AN1476 FIGURE 7: HIGH RES PWM RESOLUTION...

Ngày tải lên: 11/01/2016, 16:57

... decisions High resolution flow cytometry is an appropriate tool not restricted to the monitoring of the therapeutic effect DNA aneuploidy, as determined with high- resolution flow cytometry, has ... and apoptotic cells were assessed by flow cytometry with propidium iodide (PI)-method For detection of apoptotic cells and viability a FACS Calibur flow cytometer (Becton Dickinson Cytometry ... 2009, As the results show the DNA-cytometry proves to be a dedicated diagnostic tool in the cytopathology by measurements of the DNA-content in cells and tissues Within the scope of the tumor diagnostics,...

Ngày tải lên: 26/10/2012, 09:48

... Lad, Thin solid films 400 (2001) 56 Huiyao Wang, Pei Xu, Tianmin Wang, Thin solid films 388 (2001) 68 Christian Salinga, Hansjörg Weis, Matthias Wuttig, Thin solid films 414 (2002) 275 Toshikazu ... 8000 5 Fig XRD patterns and Raman spectrum of WO3 thin films on ITO layers with different thichnesses a) 150nm ITO; b) 200nm ITO; c) 250nm ITO; d) WO3 powder 6000 3 4000 2000 200 400 600 R a ... WO3/ITO 150 nm, WO3/ITO – 200 nm and WO3/ITO – 250 nm, 950 cm-1 peak, which corresponds to W = O boundary bonds, does not appear due to the annealing process It means that the ratio of surface to...

Ngày tải lên: 13/02/2014, 03:20

... you cannot infer that I am trying to get you to think I have a cold; from my second (intentional) sneeze, you can infer that I am trying to get you to think something or another, perhaps that I ... have gone to a party together and that we want to coordinate our leaving So, before we get to the party I say to you, “I’ll pre4 Introduction to the Linguistic Study of Language tend to sneeze ... they use it to refer to the knowledge that a speaker or writer of a language must have in order to be able to use the language at all Second, they use it to refer to any attempt to describe that...

Ngày tải lên: 15/02/2014, 01:20

... binned them into activity regions of 0.0 to 0.1, 0.1 to 0.2, 0.2 to 0.3, 0.3 to 0.4, 0.4 to 0.5, 0.5 to 0.6, and 0.6 to 0.7 VAI The maximum VAI value for all 10-s intervals of this film was 0.624 ... films from 1935 to 2005 VISUAL ACTIVITY IN HOLLYWOOD FILM Figure Scatter plots of whole -film visual activity indices (VAIs) by year for five genres of film Italic letters correspond to the films: ... on the IMDb Most films are assigned to more than one, and our films span 20 different genres The distribution of films within these genres and within a given year has varied due to changes in Hollywood...

Ngày tải lên: 19/02/2014, 14:20

... discourse—this drive to understand the workings of the fiction film is precious To have this subsumed by some larger notion of the history of audio-visions, to have it dissipate into the foggy field ... fiction films some of us most care about— and consider central to the enterprise of cinema in toto—have something quite other in mind than lying and agitating: they aim to discover.” If anything ... Actual sunlight, enhanced by reflectors of course, bounced off faces in real time This meant a lot to Scorsese in his attempt to dig into his script and his actors Things would be different in...

Ngày tải lên: 19/02/2014, 17:20

... to 100 k 43  to < 100 ; > 100  to 221 k 22  to 332 k MBB/SMA 0207 100  to 270 k 43  to < 100 ; > 270 k to 510 k 22  to M MBE/SMA 0414 100  to 470 k 43  to 470 k to ... to 100 k 43  to < 100 ; > 100  to 221 k 22  to 332 k MBB/SMA 0207 100  to 270 k 43  to < 100 ; > 270 k to 510 k 22  to M MBE/SMA 0414 100  to 470 k 43  to 470 k to ... to 100 k 43  to < 100 ; > 100  to 221 k 22  to 332 k MBB/SMA 0207 100  to 270 k 43  to < 100 ; > 270 k to 510 k 22  to M MBE/SMA 0414 100  to 470 k 43  to 470 k to...

Ngày tải lên: 20/02/2014, 10:20

... silicon nitride and ZnO films In order to obtain the dielectric constant of the silicon nitride gate dielectric film, metal–insulator–metal capacitors were fabricated separately on ITO-coated Corning ... ultrasonically cleaned with acetone, methanol, and deionized water Firstly, the ITO gate electrodes were defined by standard photolithography and wet etching using LCE-12k (Cyantek ITO Etchant) solution ... fabrication process was completed with the opening of vias to access the bottom ITO gate electrode, and this was done by standard photolithography and plasma etching of the silicon nitride film...

Ngày tải lên: 05/03/2014, 21:20

... distributions were smoothed by sliding a three-residue-averaging window along the chain The top diagram K268A refers to the reported high resolution structure with labels at nine high mobility peaks ... T68A showed much higher temperature dependence factors, corresponding to an appreciable increase in the activation energy [20] We conclude that Q140A and T68A, which are close to PLP, directly ... bond In summary, our negative experience with mutations close to PLP suggests that this region should not be touched when trying to produce novel l-amino acids [7–9] Rather, such engineering...

Ngày tải lên: 07/03/2014, 05:20

... easily torn from thin film Therefore, Ag electrode was adopted Ag electrodes were formed by printing Ag paste on the thin films with the spacing of mm between two electrodes The thin films were ... on the film fired at 4508C The thin film fired at 4508C proved to have the highest gas sensitivity and selectivity to H among reducing gases: H , CO and CH A XRD profile of this thin film indicated ... N Žnitrogen was higher by one order of magnitude in the film fired in NH than in 3% H 2rAr This implies that the nitrogen produced by the decomposition of NH diffuses into thin films and forms...

Ngày tải lên: 19/03/2014, 16:48

... Kunimoto, N Abe, H Uchida, T Katsube, Highly sensitive semiconductor NOx gas sensor operating at room temperature, Sens Actuator B 65 (2000) 122–124 [39] N Savage, B Chwieroth, A Ginwalla, B.R Patton, ... chemical sensor, biosensor, optoelectronic materials and devices, and MEMS devices He has been a leader of many national research projects related to microelectronic devices and functional nanomaterials ... sensing element is of a thin film type Therefore, the morphology of the composite thin film after the heat treatment at 550 ◦ C in vacuum of 10−2 Torr was also verified by the FE-SEM, and the result...

Ngày tải lên: 19/03/2014, 16:48

... PANI/TiO2 nanocomposite thin film layer when exposed to NH3 gas of different concentrations The device was put into a test box (320 mL), and a certain amount of NH3 gas was injected into the test chamber ... factors are in accordance with the observation that the sensor consisted of the thin film prepared at 10 ◦ C has a faster and higher response to NH3 gas The NH3 sensing capability of PANI/TiO2 thin ... with NH3 by gas injection, which may be due to the surface adsorption effect, and the chemisorptions leads to the formation of ammonium However, the interaction process between the thin film and...

Ngày tải lên: 20/03/2014, 13:04

... the values of the total covering rate θ (due to 332 J Gu´ rin et al / Sensors and Actuators B 119 (2006) 327–334 e Fig (a) Total covering rate of adsorption sites induced both by O2 and O3 in the ... An ozone monitoring instrument based on tungsten trioxide (WO3 ) semiconductor, Sens Actuators B, in press [15] H Geistlinger, Electron theory of thin- film gas sensors, Sens Actuators B 17 (1993) ... a o MoO3 -In2 O3 thin film semiconductor sensors; interaction with NO2 and O3 , Sens Actuators B 47 (1998) 92–99 [17] T Rantala, V Lantto, T Rantala, Computational approaches to the chemical sensitivity...

Ngày tải lên: 20/03/2014, 13:04

... elements into the WO3 thin films It can be seen decreasing the film total thickness that is proportionate to total sputter time Fig Sensor response of rf sputtered WO3 sensing layers to ammonia ... in semiconductor gas sensors, Sens Actuators 12 (1987) 425–440 [2] G Sberveglieri, S Groppelli, P Nell, V Lantto, H Torvela, P Romppainen, S Lepp¨ vuori, Response to nitric oxide of thin and thick ... due to the decrease in grain size into the metal oxide films This conclusion is confirmed by AFM data Certainly, further confirmation by alternative methods would be necessary Work is in progress to...

Ngày tải lên: 20/03/2014, 13:05