formation of antireflection antistatic thin films

... quantity of aluminium is less, the chance of formation of excess unreacted aluminium oxide responsible for higher resistivity is negligible This argument is substantiated by the low value of resistivity ... ) in order to get an idea of the variation in stoichiometry of the oxide matrix along the depth of the films The incident angle variation changes the penetration depth of X-rays which increases ... etching in presence of UV light is more vigorous and can affect the surface of the grains along with the selective dissolution of the grain boundaries In fact, the direction of electrochemical...

Ngày tải lên: 19/03/2014, 16:47

... c-axis of ZnO films 66 4.3 XRD parameters and calculated strains of Al doped ZnO films 67 4.4 Average roughness (Ra, nm) of ZnO films on micro arrays by AFM 70 4.5 Atomic ratios of ... influence of processing conditions on the property of ZnO films 113 5.2 The influence of processing conditions on sensor performance 116 5.3 The electrical characteristics of ZnO thin film ... materials 38 2.16 Phase diagram of ZnO-Al2O3 system 44 3.1 Deposition rates of sputtered ZnO thin films 51 3.2 (a) Top view of zinc oxide thin film array with four sensing...

Ngày tải lên: 28/05/2014, 14:44

... a tilt of 4° was used Growth of SiC films on Si(111) was achieved using the chemical reaction of monocrystalline silicon and CO gas, supplied at a rate of 1–10 ncm3/min and a pressure of 0.1–10 ... maximum (FWHM) of the SiC-TO mode as a function of mapping distance The linewidth of the TO peak significantly increases at the cavities (by *3 cm-1), a result of the contribution of differently ... the characterisation of SiC structures in particular, since it allows the identification of various polytypes [2–5] The Raman efficiency of SiC is sufficiently high because of the strong covalent...

Ngày tải lên: 21/06/2014, 17:20

... discussion The structures of TiO2 thin films were characterized by XRD using Cu Kα radiation at 30 kV and 40 mA Figure shows the XRD patterns of the TiO2 thin films as a function of the precursor temperature ... roughness This means that a change of the precursor temperature does not influence the surface roughness of TiO2 thin films FT-IR spectra of the TiO2 thin films in Figure show that peaks corresponding ... amorphous phase of the TiO2 thin films on the glass substrate at 400°C exists up to the precursor temperature of 60°C The anatase phase appears at a precursor temperature of 75°C The influence of the...

Ngày tải lên: 21/06/2014, 17:20

... Organization of Thesis Chapter 2.1 Literature Review Growth of NiO Thin Film 2.1.1 Physical deposition of NiO thin film 2.1.2 Solution growth of NiO thin film ... the formation of a strong metal filament with Al as the anode (a) The oxidation of the Al electrode and the drift of Al ions under bias (b) The formation of a metal filament from the reduction of ... void formation starting at the interface of the sheath and the solid Ni wire, and (d) Magnified image of a void free of any Ni metal contribution (local NiO tube) (b) EDX line profiles of the...

Ngày tải lên: 09/09/2015, 10:07

... properties of granular thin film AlN is found to show a negative effect on promotion of the phase transformation for the formation of ordered FePt films. 74 The in-plane coercivity of the annealed ... phase transformation of the FePt thin films was conducted The relationships between the microstructure, the disordered/ ordered phase transformation, and magnetic properties of the FePt films were ... and out -of- plane coercivities for FePt thin films deposited at 400 °C with different thicknesses Figure 4-2 In-plane and out -of- plane hysteresis loops for FePt thin films with thickness of 15 nm...

Ngày tải lên: 13/09/2015, 21:23

... properties of CoFe2O4 .1 1.1.1 Spinel structure of CoFe2O4 1.1.2 Ferrimagnetism of CoFe2O4 1.2 Magnetic anisotropy and coercivity of thin films 1.2.1 Magnetic anisotropy of films ... history 1.3.4 Strain formation in thin films Strain ε in thin films can be introduced during and after fabrication of thin films These are established when the constraint of the substrate forces ... magnetic thin films Section 1.3 shows a brief review of film growth mechanisms and strain formation in thin films Section 1.4 gives a brief literature review of fabricating Co-ferrite films Section...

Ngày tải lên: 14/09/2015, 14:12

... distribution of the grains by enhancing the grain isolation of the layers deposited on top of it A thin layer of NiP also improved the magnetic properties The structure and interface of CoCrPt/Ti films ... films fall within the domain of materials science A better basic understanding of magnetic thin films, such as the degree of alloying and phase separation of these films, may provide a future ... effects of the LRO of Ti on the LRO of CoCrPt films were studied as Research Aspect-2 (Fig 1-11) 17 Chapter I Introduction Research Aspect-2: Effects of LRO of Ti underlayer on the LRO of CoCrPt...

Ngày tải lên: 16/09/2015, 17:11

... images of α-Fe2O3 thin films prepared by (a) the method of Ryan and (b) the method of Schrebler 55 Fig 3.21 XRD patterns of α-Fe2O3 thin films prepared by the method of Ryan and the method of ... patterns of (a) as-deposited iron thin films, (b) α-Fe2O3 thin films obtained from the as-deposited iron thin films after two hours of calcination in air at 650 oC (c) shows the absence of peaks ... 56 XI List of figures Fig 3.22 XPS spectra of α-Fe2O3 thin films prepared by the method of Ryan and the method of Schrebler .56 Fig 3.23 Mott-Schottky plots of α-Fe2O3 thin films prepared...

Ngày tải lên: 26/09/2015, 10:05

... Compositional dependence on the phase transition of FeRh thin films 3.2.2 Magnetic properties of Fe100-xRhx thin films Magnetization of FeRh thin films of various compositions were shown in Figure ... multiplied by a factor of √2 of Fe52Rh48 thin films of thicknesses 5nm, 10nm, 20nm, 50nm, 100nm and 200nm 41 Figure 4.4 Magnetic-Thermal hysteresis of Fe52Rh48 thin films of thickness 200nm, 100nm, ... (a) Relative ordering parameter of α’-phase Fe100-xRhx thin films of various compositions from x = 35 to 65, and (b) Lattice parameter-c of Fe100-xRhx thin films of various compositions from x...

Ngày tải lên: 02/10/2015, 17:15

... Compositional dependence on the phase transition of FeRh thin films 3.2.2 Magnetic properties of Fe100-xRhx thin films Magnetization of FeRh thin films of various compositions were shown in Figure ... multiplied by a factor of √2 of Fe52Rh48 thin films of thicknesses 5nm, 10nm, 20nm, 50nm, 100nm and 200nm 41 Figure 4.4 Magnetic-Thermal hysteresis of Fe52Rh48 thin films of thickness 200nm, 100nm, ... (a) Relative ordering parameter of α’-phase Fe100-xRhx thin films of various compositions from x = 35 to 65, and (b) Lattice parameter-c of Fe100-xRhx thin films of various compositions from x...

Ngày tải lên: 06/10/2015, 21:06

... of contents 4.6 4.7 Co-Ta Alloy 65 4.6.1: Calibration of Co and Ta 65 4.6.2: Coercivity of Co-Ta Films 66 4.6.3: TEM of Co-Ta Grains 68 4.6.4: MFM Images of Co-Ta Films 69 4.6.5: TEM Images of ... PROPERTIES OF CO-TA THIN FILMS AND THEIR APPLICATIONS IN MAGNETIC TUNNEL JUNCTIONS FONG KIEN HOONG (B Eng (Hons), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL ... 69 4.6.5: TEM Images of Co-Ta Films 71 4.6.6: Crystal Structure of Co-Ta Films 72 4.6.7: Surface Roughness of Co-Ta (15%) 75 4.6.8: Summary of Studies on Co-Ta Films 76 Summary 77 CHAPTER 5:...

Ngày tải lên: 10/11/2015, 11:35

... years Thin Films - A Historical Perspective Thin- film technology is simultaneously one of the oldest arts and one of the newest sciences Involvement with thin films dates to the metal ages of antiquity ... 10 Electrical and Magnetic Properties of Thin Films 451 10.1 Introduction to Electrical Properties of Thin Films 451 Conduction in Metal Films 455 ... connection between thin films and the broader discipline of materials science and engineering A dramatic increase in our understanding of the fundamental nature of materials throughout much of the twentieth...

Ngày tải lên: 05/03/2014, 17:20

Ngày tải lên: 14/03/2014, 13:20

... (111), (200), (220), and (311) planes of cubic CdS [10] Fig Typical X-ray diffractogram of CdS thin films as grown Inset shows XRD pattern of the CdS thin films reported in [9] Table Standard ... VNU Journal of Science, Mathematics - Physics 24 (2008) 119-123 (a) (b) Fig SEM images of CdS thin films prepared in the bath with ml of 1M CdSO4 solution for 9h (a) and with 25 ml of 1M CdSO4 ... spectroscopy The typical Raman spectrum of the as-prepared CdS thin films is displayed in Fig The related researches [6] show that Raman spectra of CdS thin films strongly depends on the film grain...

Ngày tải lên: 14/03/2014, 13:20

... K.D Lee, Thin Solid Films 302 (1997) 84 [24] M Ohring, Materials Science of Thin Films, Academic Press, New York, 2002, p 510 [25] C.F Bohren, D.R Huffman, Absorption and Scattering of Light ... Lottici, Thin Solid Films 516 (2008) 4128 Please cite this article as: N Naseri, et al., Thin Solid Films (2009), doi:10.1016/j.tsf.2009.08.001 ARTICLE IN PRESS N Naseri et al / Thin Solid Films ... as: N Naseri, et al., Thin Solid Films (2009), doi:10.1016/j.tsf.2009.08.001 ARTICLE IN PRESS N Naseri et al / Thin Solid Films xxx (2009) xxx–xxx Table The estimated values of x in LixWO3 for pure...

Ngày tải lên: 20/03/2014, 13:04

... indicating that the growth of WO3 grains was suppressed by SiO2 Fig Average grain size of WO3 evaluated from XRD as a function of SiO2 content Fig shows AFM images of the thin films The bright spots, ... and off various concentrations of NO2 diluted in air is primarily determined by the grain size of WO3 in agreement with literature [3] The higher sensitivity of the SiO2 –WO3 films than that of ... Ra, giving Fig XRD patterns of WO3, WO3 + 5wt% SiO2, WO3 + 10wt% SiO2 and WO3 +20wt% SiO2 thin films deposited on alumina substrates with Au electrodes Fig AFM images of thin films (a): WO3, (b):...

Ngày tải lên: 20/03/2014, 13:08

... reported that the effect of an increased surface tension above the melting point in metals during laser melting of thin films could cause thickening of the thin film at the center of the laser spot Therefore, ... domain with a radius of 12 ␮m and axial depth of 0.9 ␮m is used The axial depth consists of the 0.3-␮m thin chromium film and a 0.6-␮m glass substrate The glass substrate is much thinner than that ... resolution of the optical system since only a small area of approximately 60 ϫ60 ␮ m is of interest in experiment Only enlargements of the area of interest are presented The stop action photography...

Ngày tải lên: 06/05/2014, 08:55