epitaxial growth of superconducting cuprate thin films

... discussion The structures of TiO2 thin films were characterized by XRD using Cu Kα radiation at 30 kV and 40 mA Figure shows the XRD patterns of the TiO2 thin films as a function of the precursor temperature ... roughness This means that a change of the precursor temperature does not influence the surface roughness of TiO2 thin films FT-IR spectra of the TiO2 thin films in Figure show that peaks corresponding ... Thin Solid Films 1995, 263:65 16 Kim EK, Son MH, Min S-K, Han YK, Yom SS: Growth of highly oriented TiO2 thin films on InP (100) substrates by metalorganic chemical vapor deposition J Cryst Growth...

Ngày tải lên: 21/06/2014, 17:20

... Organization of Thesis Chapter 2.1 Literature Review Growth of NiO Thin Film 2.1.1 Physical deposition of NiO thin film 2.1.2 Solution growth of NiO thin film ... Experimental Details .29 Growth of Thin Films and Nanowires 29 3.1.1 Sputtering for thin film growth 29 3.1.2 Chemical bath deposition for porous film growth 30 3.1.3 Anodization, ... 80 Growth of NiO Nanostructures 81 6.1.1 Growth and characterization of the Ni nanowires 81 6.1.2 Oxidation of the Ni nanowire within the AAO template 84 6.1.3 Oxidation of dispersed...

Ngày tải lên: 09/09/2015, 10:07

... starting material for the growth of porous titania Pieces of mm × mm were cut from the foil and one side was coated with gold (100 nm) On the other side a thin layer (10 nm) of Ti–2 wt%Al solid solution ... ) in order to get an idea of the variation in stoichiometry of the oxide matrix along the depth of the films The incident angle variation changes the penetration depth of X-rays which increases ... etching in presence of UV light is more vigorous and can affect the surface of the grains along with the selective dissolution of the grain boundaries In fact, the direction of electrochemical...

Ngày tải lên: 19/03/2014, 16:47

... c-axis of ZnO films 66 4.3 XRD parameters and calculated strains of Al doped ZnO films 67 4.4 Average roughness (Ra, nm) of ZnO films on micro arrays by AFM 70 4.5 Atomic ratios of ... influence of processing conditions on the property of ZnO films 113 5.2 The influence of processing conditions on sensor performance 116 5.3 The electrical characteristics of ZnO thin film ... materials 38 2.16 Phase diagram of ZnO-Al2O3 system 44 3.1 Deposition rates of sputtered ZnO thin films 51 3.2 (a) Top view of zinc oxide thin film array with four sensing...

Ngày tải lên: 28/05/2014, 14:44

... a tilt of 4° was used Growth of SiC films on Si(111) was achieved using the chemical reaction of monocrystalline silicon and CO gas, supplied at a rate of 1–10 ncm3/min and a pressure of 0.1–10 ... maximum (FWHM) of the SiC-TO mode as a function of mapping distance The linewidth of the TO peak significantly increases at the cavities (by *3 cm-1), a result of the contribution of differently ... symmetrical widening of all the TO peaks We conclude that the observed asymmetry of the TO peak is due to the presence of a 6H-SiC Nanoscale Res Lett (2010) 5:1507–1511 b from a void out of void 250 200...

Ngày tải lên: 21/06/2014, 17:20

... care, and support I Table of contents ACKNOWLEDGEMENTS I TABLE OF CONTENTS VII SUMMARY VII LIST OF PUBLICATIONS IX LIST OF TABLES X LIST OF FIGURES XI LIST OF SYMBOLS XV LIST OF ABBREVIATIONS XVII ... and out -of- plane coercivities for FePt thin films deposited at 400 °C with different thicknesses Figure 4-2 In-plane and out -of- plane hysteresis loops for FePt thin films with thickness of 15 nm ... Figure 5-9 (a) XRD patterns of FePt thin films of Sample E, F, G, H, and I (b) the enlarged view of in-plane XRD patterns of Sample G and Sample E at the 2θ range of 20-36 degree Figure 5-10...

Ngày tải lên: 13/09/2015, 21:23

... properties of CoFe2O4 .1 1.1.1 Spinel structure of CoFe2O4 1.1.2 Ferrimagnetism of CoFe2O4 1.2 Magnetic anisotropy and coercivity of thin films 1.2.1 Magnetic anisotropy of films ... 67 Chapter IV Growth and magnetic anisotropy of epitaxial Co-ferrite thin films 68 4.1 Growth of (111) -epitaxial CoFe2O4 films on (0001)-Al2O3 68 4.1.1 Effects of oxygen pressure on ... (111) -epitaxial CoFe2O4 films on (0001)-Al2O3 .79 4.3 Magnetic anisotropy of epitaxial Co-ferrite films 82 4.4 Growth and magnetic anisotropy of (001) -epitaxial CoFe2O4 films on (002)MgO...

Ngày tải lên: 14/09/2015, 14:12

... distribution of the grains by enhancing the grain isolation of the layers deposited on top of it A thin layer of NiP also improved the magnetic properties The structure and interface of CoCrPt/Ti films ... films fall within the domain of materials science A better basic understanding of magnetic thin films, such as the degree of alloying and phase separation of these films, may provide a future ... effects of the LRO of Ti on the LRO of CoCrPt films were studied as Research Aspect-2 (Fig 1-11) 17 Chapter I Introduction Research Aspect-2: Effects of LRO of Ti underlayer on the LRO of CoCrPt...

Ngày tải lên: 16/09/2015, 17:11

... images of α-Fe2O3 thin films prepared by (a) the method of Ryan and (b) the method of Schrebler 55 Fig 3.21 XRD patterns of α-Fe2O3 thin films prepared by the method of Ryan and the method of ... patterns of (a) as-deposited iron thin films, (b) α-Fe2O3 thin films obtained from the as-deposited iron thin films after two hours of calcination in air at 650 oC (c) shows the absence of peaks ... 56 XI List of figures Fig 3.22 XPS spectra of α-Fe2O3 thin films prepared by the method of Ryan and the method of Schrebler .56 Fig 3.23 Mott-Schottky plots of α-Fe2O3 thin films prepared...

Ngày tải lên: 26/09/2015, 10:05

... of contents 4.6 4.7 Co-Ta Alloy 65 4.6.1: Calibration of Co and Ta 65 4.6.2: Coercivity of Co-Ta Films 66 4.6.3: TEM of Co-Ta Grains 68 4.6.4: MFM Images of Co-Ta Films 69 4.6.5: TEM Images of ... PROPERTIES OF CO-TA THIN FILMS AND THEIR APPLICATIONS IN MAGNETIC TUNNEL JUNCTIONS FONG KIEN HOONG (B Eng (Hons), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL ... 69 4.6.5: TEM Images of Co-Ta Films 71 4.6.6: Crystal Structure of Co-Ta Films 72 4.6.7: Surface Roughness of Co-Ta (15%) 75 4.6.8: Summary of Studies on Co-Ta Films 76 Summary 77 CHAPTER 5:...

Ngày tải lên: 10/11/2015, 11:35

... (111), (200), (220), and (311) planes of cubic CdS [10] Fig Typical X-ray diffractogram of CdS thin films as grown Inset shows XRD pattern of the CdS thin films reported in [9] Table Standard ... spectra of thin films growth by the spray pyrolysis technique consist of a characteristic red band centered at about 698 nm The apparition of this red band may be assigned to the excess of Cd2+ ... spectroscopy The typical Raman spectrum of the as-prepared CdS thin films is displayed in Fig The related researches [6] show that Raman spectra of CdS thin films strongly depends on the film grain...

Ngày tải lên: 14/03/2014, 13:20

... for agglomeration of Si thin film Estrain Strain energy change for agglomeration of Si thin film Hvap Enthalpy of Si evaporation η Normalized film profile θ Contact angle of a droplet with ... process of a thin film 1.2 Dewetting of Thin Film Dewetting is a dynamic process which occurs when thin film in a non- equilibrium state evolves into equilibrium state of one droplet or a set of droplets ... thickening, (c) Deepening of the valley ahead of the rim, (d) pinch-off.31 The kinetics of the thin film surface evolution is described in term of the normal velocity of the surface Vn as,39 ...

Ngày tải lên: 09/09/2015, 11:26

... Compositional dependence on the phase transition of FeRh thin films 3.2.2 Magnetic properties of Fe100-xRhx thin films Magnetization of FeRh thin films of various compositions were shown in Figure ... multiplied by a factor of √2 of Fe52Rh48 thin films of thicknesses 5nm, 10nm, 20nm, 50nm, 100nm and 200nm 41 Figure 4.4 Magnetic-Thermal hysteresis of Fe52Rh48 thin films of thickness 200nm, 100nm, ... transition of epitaxial FeRh thin films 26 3.1 Experimental methods 26 3.2 Results and discussion 27 3.2.1 Crystallographic structure of Fe100-xRhx thin films 27 3.2.2 Magnetic properties of Fe100-xRhx...

Ngày tải lên: 02/10/2015, 17:15

... Compositional dependence on the phase transition of FeRh thin films 3.2.2 Magnetic properties of Fe100-xRhx thin films Magnetization of FeRh thin films of various compositions were shown in Figure ... multiplied by a factor of √2 of Fe52Rh48 thin films of thicknesses 5nm, 10nm, 20nm, 50nm, 100nm and 200nm 41 Figure 4.4 Magnetic-Thermal hysteresis of Fe52Rh48 thin films of thickness 200nm, 100nm, ... transition of epitaxial FeRh thin films 26 3.1 Experimental methods 26 3.2 Results and discussion 27 3.2.1 Crystallographic structure of Fe100-xRhx thin films 27 3.2.2 Magnetic properties of Fe100-xRhx...

Ngày tải lên: 06/10/2015, 21:06

... film -growth techniques have been put forward for the epitaxial growth of oxide films These include in situ film -growth techniques that have been successfully employed in the synthesis of epitaxial ... images of MgO films prepared with the target-substrate distance of (a) 15 mm and (b) 33 mm These films were deposited at 720 oC with oxygen pressure of 10-5 Torr 51 Figure 4.1 XRD patterns of CoFe2O4 ... to the film plane as a function of (a) substrate temperature for 50nm CoFe2O4 films, (b) film thickness for CoFe2O4 films deposited at 500 oC All the CoFe2O4 films were deposited on Si (100)...

Ngày tải lên: 07/10/2015, 10:10

... years Thin Films - A Historical Perspective Thin- film technology is simultaneously one of the oldest arts and one of the newest sciences Involvement with thin films dates to the metal ages of antiquity ... 10 Electrical and Magnetic Properties of Thin Films 451 10.1 Introduction to Electrical Properties of Thin Films 451 Conduction in Metal Films 455 ... 307 7.2 Structural Aspects of Epitaxial Films 310 7.3 Lattice Misfit and Imperfections in Epitaxial Films 316 7.4 Epitaxy of Compound Semiconductors ...

Ngày tải lên: 05/03/2014, 17:20

Ngày tải lên: 14/03/2014, 13:20

... formation of a titanium oxide (TiOx ) phase by removal of oxygen from the silica layer [9] The reduction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs The growth of silica ... decomposition of TiN films The Ni islands act as a nucleation site for the a-SiONW growth, and expedite the reduction of TiN by supplying extra hydrogen by thermal decomposition of Fig FESEM photographs of ... suppresses the decomposition of TiN, as a result, it limits the growth of a-SiONWs nanowires by the mechanism Oxygen seems Fig A schematic diagram showing a growth mechanism of silica nanowires by...

Ngày tải lên: 16/03/2014, 15:04