... discussion The structures of TiO2 thinfilms were characterized by XRD using Cu Kα radiation at 30 kV and 40 mA Figure shows the XRD patterns of the TiO2 thinfilms as a function of the precursor temperature ... roughness This means that a change of the precursor temperature does not influence the surface roughness of TiO2 thinfilms FT-IR spectra of the TiO2 thinfilms in Figure show that peaks corresponding ... Thin Solid Films 1995, 263:65 16 Kim EK, Son MH, Min S-K, Han YK, Yom SS: Growthof highly oriented TiO2 thinfilms on InP (100) substrates by metalorganic chemical vapor deposition J Cryst Growth...
... Organization of Thesis Chapter 2.1 Literature Review Growthof NiO Thin Film 2.1.1 Physical deposition of NiO thin film 2.1.2 Solution growthof NiO thin film ... Experimental Details .29 GrowthofThinFilms and Nanowires 29 3.1.1 Sputtering for thin film growth 29 3.1.2 Chemical bath deposition for porous film growth 30 3.1.3 Anodization, ... 80 Growthof NiO Nanostructures 81 6.1.1 Growth and characterization of the Ni nanowires 81 6.1.2 Oxidation of the Ni nanowire within the AAO template 84 6.1.3 Oxidation of dispersed...
... starting material for the growthof porous titania Pieces of mm × mm were cut from the foil and one side was coated with gold (100 nm) On the other side a thin layer (10 nm) of Ti–2 wt%Al solid solution ... ) in order to get an idea of the variation in stoichiometry of the oxide matrix along the depth of the films The incident angle variation changes the penetration depth of X-rays which increases ... etching in presence of UV light is more vigorous and can affect the surface of the grains along with the selective dissolution of the grain boundaries In fact, the direction of electrochemical...
... c-axis of ZnO films 66 4.3 XRD parameters and calculated strains of Al doped ZnO films 67 4.4 Average roughness (Ra, nm) of ZnO films on micro arrays by AFM 70 4.5 Atomic ratios of ... influence of processing conditions on the property of ZnO films 113 5.2 The influence of processing conditions on sensor performance 116 5.3 The electrical characteristics of ZnO thin film ... materials 38 2.16 Phase diagram of ZnO-Al2O3 system 44 3.1 Deposition rates of sputtered ZnO thinfilms 51 3.2 (a) Top view of zinc oxide thin film array with four sensing...
... a tilt of 4° was used Growthof SiC films on Si(111) was achieved using the chemical reaction of monocrystalline silicon and CO gas, supplied at a rate of 1–10 ncm3/min and a pressure of 0.1–10 ... maximum (FWHM) of the SiC-TO mode as a function of mapping distance The linewidth of the TO peak significantly increases at the cavities (by *3 cm-1), a result of the contribution of differently ... symmetrical widening of all the TO peaks We conclude that the observed asymmetry of the TO peak is due to the presence of a 6H-SiC Nanoscale Res Lett (2010) 5:1507–1511 b from a void out of void 250 200...
... care, and support I Table of contents ACKNOWLEDGEMENTS I TABLE OF CONTENTS VII SUMMARY VII LIST OF PUBLICATIONS IX LIST OF TABLES X LIST OF FIGURES XI LIST OF SYMBOLS XV LIST OF ABBREVIATIONS XVII ... and out -of- plane coercivities for FePt thinfilms deposited at 400 °C with different thicknesses Figure 4-2 In-plane and out -of- plane hysteresis loops for FePt thinfilms with thickness of 15 nm ... Figure 5-9 (a) XRD patterns of FePt thinfilmsof Sample E, F, G, H, and I (b) the enlarged view of in-plane XRD patterns of Sample G and Sample E at the 2θ range of 20-36 degree Figure 5-10...
... properties of CoFe2O4 .1 1.1.1 Spinel structure of CoFe2O4 1.1.2 Ferrimagnetism of CoFe2O4 1.2 Magnetic anisotropy and coercivity ofthinfilms 1.2.1 Magnetic anisotropy offilms ... 67 Chapter IV Growth and magnetic anisotropy ofepitaxial Co-ferrite thinfilms 68 4.1 Growthof (111) -epitaxial CoFe2O4 films on (0001)-Al2O3 68 4.1.1 Effects of oxygen pressure on ... (111) -epitaxial CoFe2O4 films on (0001)-Al2O3 .79 4.3 Magnetic anisotropy ofepitaxial Co-ferrite films 82 4.4 Growth and magnetic anisotropy of (001) -epitaxial CoFe2O4 films on (002)MgO...
... distribution of the grains by enhancing the grain isolation of the layers deposited on top of it A thin layer of NiP also improved the magnetic properties The structure and interface of CoCrPt/Ti films ... films fall within the domain of materials science A better basic understanding of magnetic thin films, such as the degree of alloying and phase separation of these films, may provide a future ... effects of the LRO of Ti on the LRO of CoCrPt films were studied as Research Aspect-2 (Fig 1-11) 17 Chapter I Introduction Research Aspect-2: Effects of LRO of Ti underlayer on the LRO of CoCrPt...
... images of α-Fe2O3 thinfilms prepared by (a) the method of Ryan and (b) the method of Schrebler 55 Fig 3.21 XRD patterns of α-Fe2O3 thinfilms prepared by the method of Ryan and the method of ... patterns of (a) as-deposited iron thin films, (b) α-Fe2O3 thinfilms obtained from the as-deposited iron thinfilms after two hours of calcination in air at 650 oC (c) shows the absence of peaks ... 56 XI List of figures Fig 3.22 XPS spectra of α-Fe2O3 thinfilms prepared by the method of Ryan and the method of Schrebler .56 Fig 3.23 Mott-Schottky plots of α-Fe2O3 thinfilms prepared...
... of contents 4.6 4.7 Co-Ta Alloy 65 4.6.1: Calibration of Co and Ta 65 4.6.2: Coercivity of Co-Ta Films 66 4.6.3: TEM of Co-Ta Grains 68 4.6.4: MFM Images of Co-Ta Films 69 4.6.5: TEM Images of ... PROPERTIES OF CO-TA THINFILMS AND THEIR APPLICATIONS IN MAGNETIC TUNNEL JUNCTIONS FONG KIEN HOONG (B Eng (Hons), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL ... 69 4.6.5: TEM Images of Co-Ta Films 71 4.6.6: Crystal Structure of Co-Ta Films 72 4.6.7: Surface Roughness of Co-Ta (15%) 75 4.6.8: Summary of Studies on Co-Ta Films 76 Summary 77 CHAPTER 5:...
... (111), (200), (220), and (311) planes of cubic CdS [10] Fig Typical X-ray diffractogram of CdS thinfilms as grown Inset shows XRD pattern of the CdS thinfilms reported in [9] Table Standard ... spectra ofthinfilmsgrowth by the spray pyrolysis technique consist of a characteristic red band centered at about 698 nm The apparition of this red band may be assigned to the excess of Cd2+ ... spectroscopy The typical Raman spectrum of the as-prepared CdS thinfilms is displayed in Fig The related researches [6] show that Raman spectra of CdS thinfilms strongly depends on the film grain...
... for agglomeration of Si thin film Estrain Strain energy change for agglomeration of Si thin film Hvap Enthalpy of Si evaporation η Normalized film profile θ Contact angle of a droplet with ... process of a thin film 1.2 Dewetting ofThin Film Dewetting is a dynamic process which occurs when thin film in a non- equilibrium state evolves into equilibrium state of one droplet or a set of droplets ... thickening, (c) Deepening of the valley ahead of the rim, (d) pinch-off.31 The kinetics of the thin film surface evolution is described in term of the normal velocity of the surface Vn as,39 ...
... Compositional dependence on the phase transition of FeRh thinfilms 3.2.2 Magnetic properties of Fe100-xRhx thinfilms Magnetization of FeRh thinfilmsof various compositions were shown in Figure ... multiplied by a factor of √2 of Fe52Rh48 thinfilmsof thicknesses 5nm, 10nm, 20nm, 50nm, 100nm and 200nm 41 Figure 4.4 Magnetic-Thermal hysteresis of Fe52Rh48 thinfilmsof thickness 200nm, 100nm, ... transition ofepitaxial FeRh thinfilms 26 3.1 Experimental methods 26 3.2 Results and discussion 27 3.2.1 Crystallographic structure of Fe100-xRhx thinfilms 27 3.2.2 Magnetic properties of Fe100-xRhx...
... Compositional dependence on the phase transition of FeRh thinfilms 3.2.2 Magnetic properties of Fe100-xRhx thinfilms Magnetization of FeRh thinfilmsof various compositions were shown in Figure ... multiplied by a factor of √2 of Fe52Rh48 thinfilmsof thicknesses 5nm, 10nm, 20nm, 50nm, 100nm and 200nm 41 Figure 4.4 Magnetic-Thermal hysteresis of Fe52Rh48 thinfilmsof thickness 200nm, 100nm, ... transition ofepitaxial FeRh thinfilms 26 3.1 Experimental methods 26 3.2 Results and discussion 27 3.2.1 Crystallographic structure of Fe100-xRhx thinfilms 27 3.2.2 Magnetic properties of Fe100-xRhx...
... film -growth techniques have been put forward for the epitaxialgrowthof oxide films These include in situ film -growth techniques that have been successfully employed in the synthesis ofepitaxial ... images of MgO films prepared with the target-substrate distance of (a) 15 mm and (b) 33 mm These films were deposited at 720 oC with oxygen pressure of 10-5 Torr 51 Figure 4.1 XRD patterns of CoFe2O4 ... to the film plane as a function of (a) substrate temperature for 50nm CoFe2O4 films, (b) film thickness for CoFe2O4 films deposited at 500 oC All the CoFe2O4 films were deposited on Si (100)...
... years Thin Films - A Historical Perspective Thin- film technology is simultaneously one of the oldest arts and one of the newest sciences Involvement with thinfilms dates to the metal ages of antiquity ... 10 Electrical and Magnetic Properties ofThinFilms 451 10.1 Introduction to Electrical Properties ofThinFilms 451 Conduction in Metal Films 455 ... 307 7.2 Structural Aspects ofEpitaxialFilms 310 7.3 Lattice Misfit and Imperfections in EpitaxialFilms 316 7.4 Epitaxy of Compound Semiconductors ...
... formation of a titanium oxide (TiOx ) phase by removal of oxygen from the silica layer [9] The reduction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs The growthof silica ... decomposition of TiN films The Ni islands act as a nucleation site for the a-SiONW growth, and expedite the reduction of TiN by supplying extra hydrogen by thermal decomposition of Fig FESEM photographs of ... suppresses the decomposition of TiN, as a result, it limits the growthof a-SiONWs nanowires by the mechanism Oxygen seems Fig A schematic diagram showing a growth mechanism of silica nanowires by...