engineering materials and their properties

... change in environment and responding without need for a microprocessor 2. A device has both gas sensing and actuating function by integration of semiconducting oxide and piezoelectric thin ... Chemically inert • Abrasion resistant Wide band gap semiconductor/insulator 3.225 18 © H.L. Tuller-2001 Photo Electro-chemical Etching - PEC • materials versatility e.g. Si, SiC, Ge, GaAs, ... / Ω Gas flow / sccm time / h 0 20 0 0 0 100k Temp:360C, H 2 , CO, NH 3 (10, 50 and 100 ppm), NO 2 (0.2, 0.4, and 2 ppm) ZnO(Ar:O 2 =7:3) 1 [ Pfad: \ alp ha missy Messungen messplat z_1 ] M.

Ngày tải lên: 11/08/2014, 14:20

... content and composition of the TaN films The 3. 0 MeV and 3. 7 MeV beam energies correspond to oxygen (O) and nitrogen (N) resonances, respectively, and were used to detect O and N... ... 300°C (Figure 3.6). The sample surfaces retained their smoothness, and golden color, and no difference between the sample at 300°C (in H 2 S) and the nitrided (no sulfur anneal) one could be ... measurements and the film thickness measured by a Tencor α-step profilometer Diffusion Barriers and Self-encapsulation 31 XRD and RBS analysis using the same parameters and conditions...

Ngày tải lên: 08/08/2014, 17:20

... Lingui Chen, and K S Gadre, Thin Solid Films... Sieradzki, K Baily, and T L Alford, Appl Phys Lett 79, 3401(2001) H C Kim, and T L Alford J Appl Phys 94(8), 5393(2003) K S Gadre and T L Alford, ... Feldman and J W Mayer, Fundamentals of Surface and Thin Film Analysis (North-Holland), New York, 307(19 86) S W Russell, S A Rafalski, R L Spreitzer, J Li, M Moinpour, F Moghadam, and T L ... 154(1995) 1998 Annual Book of ASTM Standards, edited by R A Storer (ASTM, Philadelphia), Vol 6. 01, 3 56( 1998) G R Moore, and D E Kline, Properties and Processing of Polymers for Engineers

Ngày tải lên: 08/08/2014, 17:20

... samples were tested for both test configurations (samples A, B, C, and D for bare Ag patterns, and samples A′, B′, C′, and D′ for and NH 3 - annealed Ag patterns). The average of four failure times ... alloys and bilayers on silicon dioxide substrates during self-encapsulation in an NH 3 ambient. Adams et al. [1] and Zou et al. [2] studied the dealloying kinetics of Ag (Ti), Cu (Ti) and Cu ... backscattering spectrometry (RBS) using a 2 MeV and 3.7 MeV He + 2 beams at 7° tilt and total accumulated charge of 10–20 µC were used to determine the composition and thickness of the samples. The 3.7

Ngày tải lên: 08/08/2014, 17:20

... the bonding between the two materials, Au and silicon On the other hand, the type of ambient gas, alters the surface properties of the metal upon absorption and results in an increase or ... annealing temperature and annealing time. At higher temperatures and times, more Al moves to the free surface. A high residual Al, however, remains in the Ag(200 nm)/Al(20 nm) and Ag(200 nm)/Al(30 ... between Al and Ag, the formation of a solid solution, intermetallic compound formation, a competition between the trapping of Al by the Ag and the diffusion of Al to the reaction surface, and the

Ngày tải lên: 08/08/2014, 17:20

... allows the Co and Si signals to move forward to their respective RBS surface peak energies. Optical imaging analysis of the as-deposited and the annealed Ag films at 600, 650, and 700 o C suggested ... reviews bilayer and alloy techniques with Ti, Al and others to form adhesion layers and diffusion barriers The temperature range of thermal stability is covered During Ti and Al transport ... CoSi 2 and NiSi interfaces in conjunction with a Ti-O-N diffusion barrier [20]. The discussion is divided into two sections, CoSi 2 and NiSi. Each section discusses the behavior of Ag and barrier

Ngày tải lên: 08/08/2014, 17:20

... STUDY OF CARBON-BASED MATERIALS AND THEIR APPLICATIONS IN NANOELECTRONICS KAI-TAK LAM NATIONAL UNIVERSITY OF SINGAPORE 2011 THEORETICAL STUDY OF CARBON-BASED MATERIALS AND THEIR APPLICATIONS IN ... to thank my fellow course mates and colleagues for their assistance and friendship during my Ph.D candidature They have made my graduate studies an enjoyable and memorable experience in my life ... Haixia, Huang Wen, Qian You and many others for their valuable inputs and discussions I would also like to thank the Outreach group of the Department of Electrical and Computer Engineering for the opportunities

Ngày tải lên: 10/09/2015, 08:39

... ferroelectric materials not contain Pb on BaTiO3 substrate and study their electricity and piezoelectricity properties? ?? we believe that our work will be sussces and will be useful for the understand about ... BaTiO3 substrate and study their electricity and piezoelectricity properties Specialized: Electronic materials Numerical code: 62.44.01.23 SUMMARY SCIENCE Ha noi, 2018 OF DOCTORAL IN MATERIALS The ... substitution for Ba on the structure and magnetic properties of BCT and BZT-BCT Chapter 4.The relationship between time of restore dielectric and piezoelectric properties of BCT and BZT-BCT The goads of

Ngày tải lên: 09/01/2020, 15:37

... ferroelectric materials not contain Pb on BaTiO3 substrate and study their electricity and piezoelectricity properties? ?? we believe that our work will be sussces and will be useful for the understand about ... BaTiO3 substrate and study their electricity and piezoelectricity properties Specialized: Electronic materials Numerical code: 62.44.01.23 SUMMARY SCIENCE Ha noi, 2018 OF DOCTORAL IN MATERIALS The ... substitution for Ba on the structure and magnetic properties of BCT and BZT-BCT Chapter 4.The relationship between time of restore dielectric and piezoelectric properties of BCT and BZT-BCT The goads of

Ngày tải lên: 15/01/2020, 11:41

... between Hol l 1 and CP2 was  22%, between Phl p 1 and CP1 as well as CP3 19%, and between Phl p 1 and CatB  15%. Moreover, the putative active-site amino acid Cys72 of Phl p 1 and Hol l 1 is ... similarity exist around Cys69 and Cys72 and around Trp186, Trp193 and Trp197. The positions of Cys41, 57, 69 and 72 are especially conserved between b-expansins and cathepsin B. The His104 residue, ... among a and b-expansins, which is  25%. Furthermore, high similarity is detected between regions surrounding the active sites of the proteinases and their expansin counterparts [4], and their

Ngày tải lên: 08/03/2014, 22:20

... steels – their properties and their suitability for welding Interim reprint omslag 1o4,2o3 02-06-27 07.36 Sida 2 The revisions made to this brochure concern the cover, company name and logotype ... of microstructure for the corrosion resistance properties, physical proper- ties and mechanical properties of the steels and provide information on their weldability – give advice on the selection ... chemical industry and the food processing industry. The molybdenum-free steels also have very good high-temperature properties and are therefore used in furnaces and heat exchangers. Their good impact

Ngày tải lên: 14/03/2014, 12:21

... kox and kred are kcat values for alcohol oxidation and ketose reduction; KiNADH and KiNAD are dissociation constants for NADH and NAD+; and KmRO and KmROH are Michaelis constants for ketose and ... 1-phosphate and NAD+ is random, whereas D-fructose 6-phosphate binds only after NADH has bound to the enzyme Binding of substrate and NAD(H) by AfM2DH is random for both D-mannitol oxidation and D-fructose ... – kinetic properties of mannitol-1-phosphate 5-dehydrogenase and mannitol 2-dehydrogenase, and their physiological implications Stefan Krahulec, Guilliano Cem Armao, Mario Klimacek and Bernd

Ngày tải lên: 14/03/2014, 23:20

... Process of Materials Engineering Concept /Materials Design Materials Selection, Preparation, and Fabrication Processing, Properties, and Performance Product/Application Smart Materials ... Biomedical Engineering Organic Tissues and Organs Artificial Materials, Organs, and Bionics Biomimetics and Applied Biology Surgical and Diagnostic Biotechnology Broader Issues and ... Allen, Arthur, “God and science,” Washington Post Magazine, October 15, 2000, pp 8–13, 27–32 MATERIALS SCIENCE AND ENGINEERING 123 National Research Council, Materials Science and Engineering in the

Ngày tải lên: 29/03/2014, 14:20

... multiple stands from chair, standing balance, step-up and ambulation Approximately 10 minutes [29] 8.6 minutes (SD = 3.6 minutes) [41] A bed, chair, stop watch, standardised step and gait aid ... unrelated constructs) For groups of patients who are known to differ in their mobility, group mean scores (and standard deviations) and between groups comparison data were extracted as evidence of 'known ... person hands-on, person standby, independent with aid, independent BALANCE: impaired static sitting, stable static sitting, stable dynamic sitting, stable static standing, stable dynamic standing,

Ngày tải lên: 18/06/2014, 22:20

... Surface properties of glass micropipettes and their effect on biological studies Majid Malboubi 1* , Yuchun Gu 2 and Kyle Jiang 1* Abstract In this paper, an investigation on surface properties ... achieving pipettes with desired surface properties, modeling cell-pipette interactions, and expl aining some biological phenomena such as giga-seal formation. Materials and methods Pulling pipettes The ... GTP, 10 mM HEPE, and at 7.2 in pH, and the bath solution was composed of 110 mM NaCl, 5 mM KCl, 1 mM MgCl 2 , 1 mM CaCl 2 , 5 mM HEPEs, 5 mM HEPE-Na, and at 7.2 in pH. Results and discussion Over

Ngày tải lên: 21/06/2014, 03:20

... How Do We Arrive at Properties That We Want? • Crystal Structure: • diamond vs graphite • Composition • silicon vs germanium ... electrons crossing plane in time dt = n(dxA) = n(vddtA) • # charges crossing plane per unit time and area = j ( ) j = n v d dtA (− e ) dtA = − nevd = (ne 2τ m )E • Ohm’s Law: j = σ E ⇒ σ = (ne ... Tuller-2001 13 Predicting Conductivity using Drude ntheory from the periodic table (# valence e- and the crystal structure) ntheory=AVZρm/A, where AV is 6.023x1023 atoms/mole ρm is the density...

Ngày tải lên: 11/08/2014, 14:20

... E F =  m*   * + kbT ln h   me  Eg Since me* and mh* are close and in the ln term, the Fermi level sits about in the center of the band gap ( ) − Eg  k T 2 * * p or n = ni = 2 b  me ... are generated, the Fermi level is approximately in the middle of the band gap • The law of mass action describes the electron and hole populations, since the total number of electron states is fixed ... similar to a chemical reaction, where Eg is the barrier NCNV is the density of the reactants, and n and p are the products N C NV  → e′ + h • Eg − Eg n np =ekT = i N C NV N C NV b • • • Thus,...

Ngày tải lên: 11/08/2014, 14:20

... absorb energy and contribute to properties TF~104K (Troom~102K), EF~100Eclass, vF2~100vclass2 3.225 © E Fitzgerald-1999 Effect of Temperature (T>0): Coupled electronic-thermal properties in conductors ... variable α = ∫ ψ *α op ψ dV v 3.225 © H.L Tuller-2001 19 Time and Spatial Dependence of ψ Assume ψ (x,y,z,t) separable into ψ(x,y,z) and φ(t) Applying separation of variables: − h ∇ 2ψ h ∂φ +V ... Model Traveling wave picture L Standing wave picture Ψ ( x) = Ψ ( x + L) L e ikx = e ik ( x + L ) e ikx = 2πn k= L Just having a boundary condition means that k and E are quasi-continuous, i.e...

Ngày tải lên: 11/08/2014, 14:20

... Means to Create Internal Potentials: Heterojunctions • Different semiconductor materials have different band gaps and electron affinity/work functions Internal fields from doping p-n must be superimposed ... Joining p and n p n Ec EF Ev Carriers flow under driving force of diffusion until EF is flat - - + + + + Holes diffuse Electrons diffuse 3.225 © E Fitzgerald-1999 13 Space Charge, Electric Field and ... increases depletion region, and no current flows ideally Forward Bias Reverse Bias np np eVbi-e|Va| nn nn eVbi-e|Va| pp Solve minority carrier diffusion equations on each side and determine J at depletion...

Ngày tải lên: 11/08/2014, 14:20

... promoted from the valence band to the conduction band E Ec near band gap E=hν k Creates a ‘hole’ in the valence band Ev near band gap 3.225 © E Fitzgerald-1999 Holes and Electrons • • Instead ... 1,000,000 Remember that: 3.225 µ= eτ m* and 1 ∂2E = m * h ∂k 2 Metals and Insulators • EF in mid-band area: free e-, metallic • EF near band edge – EF in or near kT of band edge: semimetal – EF in gap: ... R hybridization © E Fitzgerald-1999 18 Properties of non-free electrons • Electrons near the diffraction condition are not approximated as free • Their properties can still be viewed as free...

Ngày tải lên: 11/08/2014, 14:20