emerging new function and potential applications

nanophotonics with surface plasmons, 2007, p.341

... in shape and size, their composition and morphology can be articially tuned, and inclusions can be designed and placed at desired locations to achieve new functionality As the Editors of this ... Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA Alexander V Kildishev School of Electrical and Computer Engineering and Birck Nanotechnology ... Realization and investigations of thermo-optic MZIMs and DCSs are described in Section Design, fabrication and characterization of ILEMs and power monitors are presented in Sections and 6, respectively...

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Fabrication and characterization of semiconductor nanowires for thermoelectric application 3

Danh mục: Cao đẳng - Đại học

... a thermocouple and a Watlow Ceramic Heater for measurement at high temperature Both the thermocouple and the ceramic heater were connected to the EZ-Zone Express PID Controller and Control Box ... evaporation process was at the level of 10-7 mbar and the pressure during evaporation was about x 10-6 mbar Proper out-gasing (of both the boat and the source) prior to the Au evaporation onto ... crystal microbalance (QCM) and verified ex-situ by an atomic force microscopy (JEOL JSPM 5200) !"#$%&'((')*+,-'."/#%/0'+1'23&'&4/5+%/2+%'6762&08' The thin gold film agglomerated and was broken into...

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Design, fabrication, and characterization of a solenoidsystem to generate magnetic ﬁeld for an ECR proton source

Danh mục: Hóa học - Dầu khí

... conductor, water pressure drop and ﬂow, the inlet and outlet connections were provided Total ﬁve inlet and ﬁve outlet connections were provided The water ﬂow rate liter/min and pressure 3·5 kg/cm2 was ... research and prospects of the medical utilization ECRIS-08 Chicago IL USA Brown I G 1989 The physics and technology of ion sources (New York: John Willey & Sons) 468 S K Jain, P A Naik and P R ... M, Ando L, Guo X H, Gobin R, Ferdinand R 2004 Status of the Trasco intense proton source and emittance measurements Rev Sci Instrum 75(5): 1423–1426 Ciavola G, Celona L, Gammino S, Presti M, Ando...

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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

Danh mục: Vật lý

... duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) top and side views with annealing ... VOC, FF, and η, as a function of tube length (L); these data were obtained from analysis of IV curves in Figure 5b and summarized in Table TABLE 1: Photovoltaic Performance of NT DSSC as a Function ... two standard errors b Additional component in electrolytes A-D contains guanidinium thiocyanate (GuNCS, 0.1 M) in a mixture of acetonitrile and valeronitrile (volume ratio 15/1 for A and B, and...

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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

Danh mục: Hóa học - Dầu khí

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... presence of graphene wrinkles and SWNTs The optical transmittance of the graphene, SWNT, and carbon composite electrodes was then measured to investigate their potential for use as transparent...

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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

Danh mục: Hóa học - Dầu khí

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... presence of graphene wrinkles and SWNTs The optical transmittance of the graphene, SWNT, and carbon composite electrodes was then measured to investigate their potential for use as transparent...

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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

Danh mục: Hóa học - Dầu khí

... completely and a nanotip with pyramid-like shape is developed The field emission property was measured, and the turn-on field and work function of the ultra-sharp nanotip was about 5.37 V/µm and 4.59 ... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and Tissue ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and...

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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Danh mục: Kỹ thuật - Công nghệ

... Al-coated substrate and (ii) standard μc-Si:H(n) and ZnO:Al thickness on an Al-coated substrate For the DBR stack, the μc-Si:H(n) and ZnO:Al layer thickness is chosen as 69 nm, and 142 nm respectively ... intrinsic aSi:H, µc-Si:H(n) and ZnO:Al are 3, 69 and 142 nm, respectively, for the conductive DBR For the standard case, the thicknesses for a-Si:H(n) and ZnO:Al are 20 and 80 nm, respectively ... reported bandgap of amorphous silicon (~1.7 eV) against that of crystalline silicon (1.1 eV), it follows that there is a larger band offset (~0.45 eV) at the valence band edges and a smaller band offset...

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Large area plasmonic nanostructures design, fabrication and characterization by laser

Danh mục: Cao đẳng - Đại học

... and (e) λ = 1298 nm) and the dipole resonances ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants of the nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and ... nm, and (e) λ = 1298 nm) and the dipole resonance ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants for nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and ... nm, and (e) λ = 1298 nm) and the dipole resonance ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants for nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and...

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2D and 3d terahertz metamaterials design, fabrication and characterization

Danh mục: Cao đẳng - Đại học

... size, (c) Hybrid design at core sizes of 24, 28, 32 and 34 µm and a constant gap of µm and (d) Hybrid design at gap sizes of 2, 4, and µm and a constant core size of 32 µm The insert for each ... the narrow working band arising from the resonance properties In order to cover a broadband working frequency band, this study covers the metamaterials design, fabrication, and characterization ... X Figure (a) Transmission at LC and half-wavelength resonance frequencies of multi-layer metamaterials of 1, 2, 3, 4, and layers, and (b) roll-off values of LC and halfwavelength resonant dips...

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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Danh mục: Cao đẳng - Đại học

... into three categories: IT and consumer electronics, automotive, and industry [8] Fig 1.2 Bandgap EG of hexagonal (α-phase) and cubic (-phase) InN, GaN, AlN, and their alloys versus ... wafer and Si (111) substrate removal, and BCB stands for benzocyclobutene (c) GaN/AlGaN buffer bonded to a glass wafer (d) Final device structure after releasing the carrier wafer G, S and D stand ... Ga-ON and Ga-N bond energies are located at 20 and 19.6 eV, respectively (a) Ga-ON peak is observed for the sample without VA and SiH4 treatment, and (b) is absent for the sample with VA and SiH4...

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Fabrication and characterization of germanium photodetectors

Danh mục: Cao đẳng - Đại học

... high stand-by power consumption thus making Ge MSM photodetectors unfavorable and not practical Due to the narrow bandgap and strong Fermi-level pinning of the metal/Ge interface at valence band, ... Temporal impulse response of LPD and VPD at 1V, 3V, and 5V reverse bias Inset shows the 3dB bandwidth of the devices 69 Fig 4.13: Probing pads for photodetectors bandwidth measurement ... carrier-transit-time-limiting bandwidth and efficiencies of normal incidence PIN Ge photodetector 25 Fig 2.4: Schematic of a waveguide-fed photodetector 27 Fig 2.5: Bandwidth and responsivity...

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Fabrication and characterization of composite membranes for gas separation

Danh mục: Tổng hợp

... husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement and support ... Spillman and Sherwin, 1990; Paul and Yampol’skii, 1994; Mulder, 1996): ease of installation and operation, size and weight efficiency, potentially low energy consumption, environmentally benign and ... Koros and Flemming, 1993; Kesting and Fritzsche, 1993; Paul and Yampol’skii, 1994; Stern, 1994) Among these emerging applications, the separation of hydrocarbons and chlorofluoro carbon vapors from...

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Fabrication and characterization of luminescent silicon nanocrystal films

Danh mục: Tổng hợp

... guidance and encouragement all through the course of my PhD study His perseverance and diligence are outstanding examples to me I am deeply indebted to my co-supervisors, Professors Wu Yihong and ... as-deposited and (b) after thermal annealing in high vacuum for 60 at a temperature of 800 °C 135 Fig 5.6 Optical bandgaps and PL peak energies of the SiOx nanostructured films formed by PLD as functions ... in physics and chemistry Research work has been focused on the unique structures, stability, optical and electronic properties, and chemical reactivity of Si NCs, both in free space and on surfaces...

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Fabrication and characterization of memory devices based on organic polymer materials

Danh mục: Tổng hợp

... mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of ... 316 (1970) [72] C C Leznoff and A B P Lever, Phthalocyanines, Properties and Applications, Vol 1-4, Wiley-VCH, New York (1997) [73] M Fustoss-Wegner and K Ritvay-Emandity, KFKI-75-17, (1975) [74] ... exploit new materials and concepts to allow better scaling, and to enhance the memory performance need to be developed Among the several emerging memory technologies (FeRAM, MRAM, PCM, and organic/polymer...

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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors

Danh mục: Tổng hợp

... 1994 23 J M D Coey and S Sanvito, “Magnetic semiconductors and half-metals”, J Phys D: Appl Phys 37, pp 988-993, 2004 24 S P Lewis, P B Allen and T Sasaki, “Band structure and transport properties ... A1, A2, A3, A4, A6 and bulk Ge 66 The dotted lines indicate the peak positions of amorphous Ge and GaAs substrate at the position of 275, 267 and 292 cm-1, Ge nanocrystal and bulk Ge at the position ... (solid circles) and -100 Oe (open circles) The solid and dashed lines present the magnetization orientations of NiFe and Ge0.67Mn0.33 layers, respectively FIG 6.6 ∆R ratio as a function of the...

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Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Danh mục: Tổng hợp

... Santoso Yohannes Ervan and Ms Natalia Widjojo for their assistance and generous suggestions; Mdm H J Chiang, Mdm S M Chew and Mr K P Ng from the Department of Chemical and Biomolecular Engineering ... Wang, my parents and my family for their endless love, encouragement and support that enable me to continue my academic pursuing i Fabrication and Characterization of Ultrafiltration and Nanofiltration ... geometric standard deviation (σp) and the molecular weight cut off (MWCO) of PBI membrane fabricated from same polymer .152 x Fabrication and Characterization of Ultrafiltration and Nanofiltration...

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Fabrication and characterization of AIGaN gan HEMTs

Danh mục: Tổng hợp

... phone (0.8 and 1.9 GHz) [9] At high frequencies, satellite and terrestrial communications (1.6, 2.5, 5.2, 23, 28 GHz) [9] and military applications (X-band, to 12 GHz) represent a strong potential ... layer and the channel layer: ρ(z) = e[n(z) – p(z) + NA – ND] (2.7) where n(z) and p(z) are the densities of the electrons and holes, and NA and ND are the densities of the ionized donors and acceptors, ... conduction and valence band edges occur at the heterointerface For the HEMT, the wide-bandgap material, for example AlGaN, is ndoped with Si donors The added charges bend the band edges and create...

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Fabrication and characterization of lateral spin valves

Danh mục: Tổng hợp

... transport and to understand the underlying physics from which they result In order to open up the way for more spin-based Chapter One: Introduction electronic applications of new and improved functionality, ... Leong and Mr Wong Wai Kong for their technical support and help Last but not least, I would also like to thank all those who have helped me in one way or another and whose support and understanding ... the spin-up and spin-down chemical potentials of the electrons in the NM metal The majority spins have a higher chemical potential than the minority spins and it is this chemical potential which...

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Fabrication and characterization of photonic crystals

Danh mục: Tổng hợp

... Acknowledgements First and foremost, I thank my supervisor, A/Prof Liu Xiang Yang and co-supervisor, A/Prof Ji Wei, and Dr Zhang Keqin for their invaluable guidance and advice throughout my entire candidature ... continuous functions: ω n k (for n = 1, 2, …) When they are plotted as a function of v the wavevector k , these frequency “bands” form the band structure of the crystal Figure 1.2 shows band structure ... [35] B T Holland, C F Blanford, and A Stein, Science 281, 538-540 (1998) [36] B T Holland, C F Blanford, T Do, and A Stein, Chem Mater 11, 795-805 (1999) [37] J E G J Wijnhoven and W L Vos, Science...

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