electronic properties of metal organic interfaces

... transistor (OFET) Though generally called metal- organic (MO) interfaces, metal- on -organic (M/O) interfaces are usually quite different from organic- on -metal (O/M) interfaces both in physical and electronic ... and metal- oxide interfaces xv Chapter Introduction 1.1 Metal- on -organic and organic- on -metal interfaces Despite the fact that organic semiconductors have made a great commercial success in organic ... parents iv Table of Contents Table of Contents v List of Tables viii List of Figures ix Acknowledgements xiv Abstract xv Introduction 1.1 Metal- on -organic and organic- on -metal interfaces ...

Ngày tải lên: 11/09/2015, 08:59

... demonstration of organic light emitting diodes,1,2 successful fabrication of organic thin film transistors3,4 and demonstration of organic photovoltaic.5 These results have grown the expectation to use organic ... 3, a comparative NEXAFS study of the dichroism of the C1s→π* transition of the frontier polymer chains, and of the spectrum, for both the top and bottom interfaces of rrP3HT thin films deposited ... the number of energy levels The energy gap determines the electronic and electrical properties of the conducting polymers Hence, control of the HOMO-LUMO gap and specifically the design of low band...

Ngày tải lên: 11/09/2015, 10:15

Ngày tải lên: 21/02/2014, 18:20

... energy of nanowire in the supercell, lSi (lH) is the chemical potential of an Si (H) atom, nSi (nH) is the number of Si (H) atoms, and ez is the zero-point energy of Si–H vibrations The value of ... in terms of the projection of energy band in bulk Si and confinement effect: the confinement decreases the energy of HO states and increases the energy of the LU states, but the magnitude of the ... 3b) Due to these electronic states, it is expected that pristine and {0 1} facets hydrogenated NWs exhibit semimetallic character This is quite different from the metallic and semimetallic behaviour...

Ngày tải lên: 16/03/2014, 15:37

... resistance of 1H is smaller than that of 2H, the resistance of 1a is larger than that of 2a It turns out that the TiO –Pt film is a little more reduced than the TiO film, but the resistance of the ... with that in 3% H 2rAr Although the resistance of 3H is the same order of magnitude as that of 1H, the resistance of 3a is extremely lower than that of 1a This means that the film fired in 3% H ... Fig SIMS profiles for the TiO –Pt thin film fired in 3% H 2rAr or NH on the properties of platinum particles The low sensitivity and resistance of the as-fired film and the recovery of the sensitivity...

Ngày tải lên: 19/03/2014, 16:48

... DOS of occupied Density of States (electrons/eV) Density of States (electrons/eV) Density of States (electrons/eV) Density of States (electrons/eV) Density of States (electrons/eV) 0.6 Page of ... address the influence of axial tensions on the electronic properties of (8,0) zigzag and (5,5) armchair BNNTs Although the stress-strain profiles indicate the mechanical properties of these two BNNTs ... clearly demonstrates that the mechanical deformations of BNNTs significantly influence their electronic properties, with the electronic properties of different chirality BNNTs displaying different...

Ngày tải lên: 21/06/2014, 05:20

... preserve Cu MOF-3 architecture is proven by successful synthesis of Cu MOF-4 Cu MOF-4 loses 35% of its mass up to a temperature of 250°C The finding of Cu MOF-3N shows our class of MOF constructed ... Assembly of metal organic frameworks (MOFs) by the copolymerization of metal ions with organic linkers to give (a) flexible metal bipyridine structures with expanded diamond topology and (b) rigid metal carboxylate ... Assembly of metal organic frameworks (MOFs) by the copolymerization of metal ions with organic linkers to give (a) flexible metal bipyridine structures with expanded diamond topology and (b) rigid metal carboxylate...

Ngày tải lên: 02/07/2014, 12:59

... OF CONTENTS Declaration II Acknowledgements III Table of Contents VI Summary XII List of Tables XV List of Figures XVI List of Schemes XXII List of Abbreviations XXIII Publications XXV List of ... transformation of 2D interdigitated MOF, V-1.2 5.1-12 to doubly interpenetrated 3D MOF, V-1.3 Figure 5.1- Comparison of PXRD data of V-1.2 & V-1.3 5.1-13 Figure 5.1- 10 A perspective view of a portion of ... (MOFs), Metal- Organic Materials (MOMs) and so on The potential of these compounds is evident from the recent commercialization of five MOFs.[15] Figure 1- A schematic representation of a MOF structure...

Ngày tải lên: 09/09/2015, 11:15

... were 40:10 sccm of Cl2:Ar, a chamber pressure of 0.7 Pa, an RF forward power of 800 W, and a capacitive bias of 350 W J Appl Phys 112, 063714 (2012) FIG (a) XRD 2-theta-omega scan of an LSMO/LMO ... images of anisotropically etched LSMO/LMO superlattices with pillar heights of lm and the schematic of final structure of LSMO/LMO superlattices for I-V cross-plane measurement (b) Side view of final ... pulse width of 25 ns A laser fluence of 1.3 J/cm2 and a pulse frequency of Hz were used to ablate the sintered LSMO target The deposition was performed at a constant substrate temperature of 740 ...

Ngày tải lên: 06/05/2014, 08:53

... types of interfaces 70 Figure 4: Various plots for MR of different interfaces under T magnetic field at K Normal plot for 2D interfaces (a) and 3D interfaces (b); Polar plot for 2D interfaces ... orbital degree of freedom in complex oxides, new properties can emerge at the interfaces of atomically flat oxide heterostructures, because of the inherent discontinuities at the interfaces Understanding ... 7.1.1 Optical Properties of LAO/STO Interface 109 7.1 Summary 109 7.1.2 Electrical Properties of LAO/STO Interface 109 7.1.3 Magnetic Properties of LAO/STO Interface...

Ngày tải lên: 09/09/2015, 10:07

... Investigation of 2DEG at the interfaces of various combinations of polar and non-polar oxides 103 5.1 Introduction 105 5.2 Fabrication of polar and non-polar oxide interfaces ... of NdAlO3/ SrTiO3 interfaces 107 5.4 Comparison of various polar/non polar oxide interfaces 109 5.5 Electronic correlation and strain effects 110 5.6 Thickness dependence study of ... spacing of (100) STO of 0.39 nm (c) AFM topography image of the STO (110) surface after treatment.(d) AFM height profile showing the step height is equal to a unit cell spacing of (110) STO of 0.278...

Ngày tải lên: 10/09/2015, 09:11

... 1.1.2 Origin of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface – the role of oxygen vacancies and electronic reconstruction Despite of a substantial body of novel properties unveiled ... results that p-type LaAlO3/SrTiO3 interfaces [17] and interfaces created by growing SrTiO3 films on LaAlO3 [46] are insulating Metallic interfaces with similar electronic properties produced by amorphous ... superlattices, it does not change the evolution of electronic properties of SrRuO3/LaAlO3 superlatties with thickness To explore the origin of the metal- insulator transition in ultrathin SrRuO3...

Ngày tải lên: 10/09/2015, 09:11

... Structure of the electronic device Structure of the optoelectronic device Desired OEIC Substrate APPROACH Growth of the optoelectronic device structure Substrate Mask a portion of the layer Regrowth of ... both the quality of the growing substrate and the layer by layer growth mode 8 Chapter Structural Properties of Semiconductors Metal Organic Chemical Vapor Deposition (MOCVD) Metal organic chemical ... that allow modifications of electronic properties; use of alloys, quantum wells, strain and polar charge are discussed; iii) electron (hole) transport and optical properties of semiconductors and...

Ngày tải lên: 24/01/2014, 17:34

... concomitant appearance of other signals in other parts of the spectrum This result could be a consequence of the paramagnetic properties of Fe(II), or it might arise from the presence of an intermediate ... C Pastore et al Metal- binding properties of CyaY A B N C N C Fig Perturbations of the NMR spectra caused by different ions (A) Summary of the residues affected by the addition of different ions ... Superimpositions of a reference [1H,15N] HSQC spectrum of CyaY (blue) with a spectrum (red) of a : mixture of CyaY ⁄ Gd3+ (A), a : mixture of CyaY ⁄ Lu3+ (B), and a : mixture of CyaY ⁄ Ca2+ (C)...

Ngày tải lên: 18/02/2014, 16:20

... presence of the same kind of spectrum for 4N complexes of GGH, where the a carbon of the His residue is the sole source of chirality [10] However, while positions of the component dd bands and of CT ... studies of the Ni(II) complex of HSA [6] Due to different protonation patterns, the stability constants of particular complexes of model peptides cannot be compared directly There are two ways of ... in the middle of the range of values for both Cu(II) and Ni(II) Note that the variation of side chain substituents can result in changes of complex stabilities by up to six orders of magnitude,...

Ngày tải lên: 22/02/2014, 04:20

... actually of great interest since they offer a wide range of structural and physical properties giving the opportunity to employ these materials for different applications Liquid-Delivery Metal Organic ... electrodes are used to form metal- ferroelectric -metal capacitors: single metals (Pt, Au, Ru) and metallic oxides (RuO2, IrO2, SrRuO3) In addition, the properties of the heterostructure also depend ... the measurement of the termination layer of the surfaces are described in detail In Section 3.2 special attention has been paid to the physical and chemical properties of metal- organic precursors...

Ngày tải lên: 14/03/2014, 19:20

... position of Fig 11), approaching asymptotically the value of the band-gap of the undoped Si-nw This is another indication of how doping can modify the electronic and optical properties of the Si ... FE and the electronic properties of the Si-nc are influenced by the insertion of more and more impurities We call this insertion of several impurities multidoping Fig shows how the FE of a large ... quite independent of the nanocrystal dimension 2.2.2 Electronic properties Concerning the electronic properties, in the single-doped cases, we have already shown that the presence of donor or acceptor...

Ngày tải lên: 16/03/2014, 15:15

... average resistivity of all heavily doped (1019 cm−3 ) nanowires is found to be 83 m cm, a value higher by a factor of 14 than expected from the design data of m cm (a factor of for the largest ... than a threshold of −2:7 V [11,12] The ambient humidity is kept constant at a level of 30 – 40% Applying a tip voltage while the tip is scanned over the silicon surface at speed of 0.1– m=s leads ... conductance of silicon nanowires (section of 15×50 nm2 ) at room and low temperatures (4 –15 K) elaborated by AFM lithography on these thinned SOI samples has been measured The e ect of lateral...

Ngày tải lên: 16/03/2014, 15:15

... Magneto-optical properties of magnetic multilayers 2.2.1 Magneto-optical properties of Co/Pd systems 2.2.2 Magneto-optical properties of Co/Pt multilayers 2.2.3 Magneto-optical properties of Co/Cu multilayers ... physical properties of layered structures including the MO properties Chapter of the book presents the MO properties of f band ferromagnetic materials Sections 3.1 devoted to the MO properties of 4f ... the MO properties of elemental ferromagnetic metals (Fe, Co, and Ni) and paramagnetic metals in external magnetic fields (Pd and Pt) Also TLFeBOOK xii ELECTRONIC STRUCTURE AND MO PROPERTIES OF SOLIDS...

Ngày tải lên: 17/03/2014, 14:51

... reduction of the semireduced to the reduced and EPR silent state of the FeMo cofactor [45] DISCUSSION The FeMo cofactor, one of the two unique metal clusters present in the MoFe protein component of ... dinitrogenase component of nitrogenases contains two types of unique metal clusters, the so-called M-cluster (FeMo cofactor, FeV cofactor, FeFe cofactor), which represents the site of substrate reduction ... was Ó FEBS 2002 Redox properties of the FeFe protein (Eur J Biochem 269) 1653 Fig Redox titration of the cofactor and P-cluster EPR signals deriving from the MoFe protein of R capsulatus The redox...

Ngày tải lên: 18/03/2014, 01:20